| Nanoscale memory elements based on solid-state electrolytes MN Kozicki, M Park, M Mitkova IEEE Transactions on Nanotechnology 4 (3), 331-338, 2005 | 671 | 2005 |
| Silver incorporation in Ge–Se glasses used in programmable metallization cell devices M Mitkova, MN Kozicki Journal of non-crystalline solids 299, 1023-1027, 2002 | 392 | 2002 |
| Dual chemical role of Ag as an additive in chalcogenide glasses M Mitkova, Y Wang, P Boolchand Physical Review Letters 83 (19), 3848, 1999 | 358 | 1999 |
| Microelectronic programmable device and methods of forming and programming the same MN Kozicki, M Mitkova US Patent 6,635,914, 2003 | 355 | 2003 |
| A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte MN Kozicki, C Gopalan, M Balakrishnan, M Mitkova IEEE Transactions on Nanotechnology 5 (5), 535-544, 2006 | 288 | 2006 |
| Microscopic origin of the glass forming tendency in chalcohalides and constraint theory M Mitkova, P Boolchand Journal of non-crystalline solids 240 (1-3), 1-21, 1998 | 247 | 1998 |
| Microelectronic programmable device and methods of forming and programming the same MN Kozicki, M Mitkova US Patent 6,998,312, 2006 | 197 | 2006 |
| Nonvolatile memory based on solid electrolytes MN Kozicki, C Gopalan, M Balakrishnan, M Park, M Mitkova Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference, 10-17, 2004 | 178 | 2004 |
| Mass transport in chalcogenide electrolyte films–materials and applications MN Kozicki, M Mitkova Journal of non-crystalline solids 352 (6-7), 567-577, 2006 | 173 | 2006 |
| Information storage using nanoscale electrodeposition of metal in solid electrolytes MN Kozicki, M Mitkova, M Park, M Balakrishnan, C Gopalan Superlattices and microstructures 34 (3-6), 459-465, 2003 | 171 | 2003 |
| Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes MN Kozicki, M Balakrishnan, C Gopalan, C Ratnakumar, M Mitkova Symposium Non-Volatile Memory Technology 2005., 7 pp.-89, 2005 | 150 | 2005 |
| Microelectronic programmable device and methods of forming and programming the same MN Kozicki, M Mitkova US Patent 7,405,967, 2008 | 111 | 2008 |
| Scalable programmable structure, an array including the structure, and methods of forming the same M Kozicki, M Mitkova, C Gopalan US Patent App. 10/458,551, 2004 | 107 | 2004 |
| Influence of Cu diffusion conditions on the switching of Cu–SiO2-based resistive memory devices SP Thermadam, SK Bhagat, TL Alford, Y Sakaguchi, MN Kozicki, ... Thin Solid Films 518 (12), 3293-3298, 2010 | 99 | 2010 |
| Thermal and photodiffusion of Ag in S-rich Ge–S amorphous films M Mitkova, MN Kozicki, HC Kim, TL Alford Thin solid films 449 (1-2), 248-253, 2004 | 93 | 2004 |
| Nanoscale phase separation in Ag–Ge–Se glasses MN Kozicki, M Mitkova, J Zhu, M Park Microelectronic Engineering 63 (1-3), 155-159, 2002 | 87 | 2002 |
| Local structure resulting from photo and thermal diffusion of Ag in Ge–Se thin films M Mitkova, MN Kozicki, HC Kim, TL Alford Journal of non-crystalline solids 338, 552-556, 2004 | 81 | 2004 |
| Molecular structure, glass transition temperature variation, agglomeration theory, and network connectivity of binary P-Se glasses DG Georgiev, M Mitkova, P Boolchand, G Brunklaus, H Eckert, ... Physical Review B 64 (13), 134204, 2001 | 77 | 2001 |
| Electrical characterization of solid state ionic memory elements R Symanczyk, M Balakrishnan, C Gopalan, T Happ, M Kozicki, M Kund, ... Proceedings of the non-volatile memory technology symposium, 17-1, 2003 | 76 | 2003 |
| Macroscopic phase separation of Se-rich (x< 1/3) ternary Agy (GexSe1− x) 1− y glasses Y Wang, M Mitkova, DG Georgiev, S Mamedov, P Boolchand Journal of Physics: Condensed Matter 15 (16), S1573, 2003 | 71 | 2003 |
Chakravarthy GopalanOracle在 micron.com 的电子邮件经过验证
