| Analytical modelling and simulation of single-gate SOI TFET for low-power applications TS Samuel, NB Balamurugan, S Bhuvaneswari, D Sharmila, ... INTERNATIONAL JOURNAL OF ELECTRONICS 101 (6), 779-788, 2014 | 52 | 2014 |
| A holistic approach on Junctionless dual material double gate (DMDG) MOSFET with high k gate stack for low power digital applications S Darwin, TS Arun Samuel silicon 12 (2), 393-403, 2020 | 35 | 2020 |
| Performance enhancement of triple material double gate TFET with heterojunction and heterodielectric P Vimala, TSA Samuel, D Nirmal, AK Panda Solid State Electronics Letters 1 (2), 64-72, 2019 | 34 | 2019 |
| IoT BASED MILK MONITORING SYSTEM FOR DETECTION OF MILK ADULTERATION G Rajakumar, TA Kumar, TSA Samuel, E Muthu International Journal of Pure and Applied Mathematics 118 (9), 21-32, 2018 | 34 | 2018 |
| Analytical modeling and simulation of dual material gate tunnel field effect transistors TS Samuel, NB Balamurugan, S Sibitha, R Saranya, D Vanisri Journal of Electrical Engineering and Technology 8 (6), 1481-1486, 2013 | 26 | 2013 |
| TCAD simulation study of single-, double-, and triple-material gate engineered trigate FinFETs P Vimala, TS Arun Samuel Semiconductors 54, 501-505, 2020 | 24 | 2020 |
| An analytical modeling and simulation of dual material double gate tunnel field effect transistor for low power applications TS Arun Samuel, NB Balamurugan Journal of electrical engineering and technology 9 (1), 247-253, 2014 | 24 | 2014 |
| Performance analysis of triple material tri gate TFET using 3D analytical modelling and TCAD simulation S Komalavalli, TSA Samuel, P Vimala AEU-International Journal of Electronics and Communications 110, 152842, 2019 | 22 | 2019 |
| A new 2 D mathematical modeling of surrounding gate triple material tunnel FET using halo engineering for enhanced drain current P Vanitha, TSA Samuel, D Nirmal AEU-International Journal of Electronics and Communications 99, 34-39, 2019 | 21 | 2019 |
| Impact of uniform and non-uniform doping variations for ultrathin body junctionless FinFETs S Manikandan, NB Balamurugan, TSA Samuel Materials Science in Semiconductor Processing 104, 104653, 2019 | 20 | 2019 |
| Performance evaluation of gate engineered InAs–Si heterojunction surrounding gate TFET M Sathishkumar, TSA Samuel, K Ramkumar, IV Anand, SB Rahi Superlattices and Microstructures 162, 107099, 2022 | 19 | 2022 |
| Triple metal surrounding gate junctionless tunnel FET based 6T SRAM design for low leakage memory system GL Priya, M Venkatesh, NB Balamurugan, TSA Samuel Silicon 13, 1691-1702, 2021 | 19 | 2021 |
| Performance investigation of gate engineered tri-gate SOI TFETs with different high-K dielectric materials for low power applications P Vimala, TSA Samuel, MK Pandian Silicon 12 (8), 1819-1829, 2020 | 19 | 2020 |
| An analytical modeling and simulation of dual material double gate tunnel field effect transistor for low power applications TSA Samuel, NB Balamurugan Journal of Electrical Engineering & Technology 9 (1), 247-253, 2014 | 19 | 2014 |
| Analytical surface potential model with TCAD simulation verification for evaluation of surrounding gate TFET TS Samuel, NB Balamurugan, T Niranjana, B Samyuktha Journal of Electrical Engineering and Technology 9 (2), 655-661, 2014 | 17 | 2014 |
| Investigation of ON current and subthreshold swing of an InSb/Si heterojunction stacked oxide double-gate TFET with graphene nanoribbon TSA Samuel, M Venkatesh, MK Pandian, P Vimala Journal of Electronic Materials 50, 7037-7043, 2021 | 15 | 2021 |
| A novel 2-D analytical model for the electrical characteristics of a gate-all-around heterojunction tunnel field-effect transistor including depletion regions C Usha, P Vimala, TSA Samuel, MK Pandian Journal of Computational Electronics 19, 1144-1153, 2020 | 15 | 2020 |
| Investigation of cylindrical channel gate all around InGaAs/InP heterojunction heterodielectric tunnel FETs P Vimala, TS Arun Samuel Silicon 13 (11), 3899-3907, 2021 | 14 | 2021 |
| A detailed roadmap from single gate to heterojunction TFET for next generation devices JE Jeyanthi, TSA Samuel, AS Geege, P Vimala Silicon 14 (7), 3185-3197, 2022 | 13 | 2022 |
| Simulation insights of a new dual gate graphene nano-ribbon tunnel field-effect transistors for THz applications GH Nayana, P Vimala, MK Pandian, TSA Samuel Diamond and Related Materials 121, 108784, 2022 | 13 | 2022 |
Dr. Vimala PProfessor, Department of Electronics & Communication, Dayananda Sagar College of Engineering在 dayanandasagar.edu 的电子邮件经过验证
