| Gallium nitride-based complementary logic integrated circuits Z Zheng, L Zhang, W Song, S Feng, H Xu, J Sun, S Yang, T Chen, J Wei, ... Nature electronics 4 (8), 595-603, 2021 | 154 | 2021 |
| Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT J Sun, H Xu, X Wu, K Sheng 2016 13th China International Forum on Solid State Lighting: International …, 2016 | 70 | 2016 |
| Short circuit capability and high temperature channel mobility of SiC MOSFETs J Sun, H Xu, X Wu, S Yang, Q Guo, K Sheng 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 56 | 2017 |
| Short Circuit Capability and Short Circuit Induced Instability of a 1.2-kV SiC Power MOSFET J Sun, J Wei, Z Zheng, Y Wang, KJ Chen IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019 | 49 | 2019 |
| Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests J Sun, J Wei, Z Zheng, KJ Chen IEEE Transactions on Industrial Electronics 68 (9), 8798-8807, 2020 | 33 | 2020 |
| A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications G Lyu, Y Wang, J Wei, Z Zheng, J Sun, L Zhang, KJ Chen IEEE Transactions on Power Electronics 35 (9), 9669-9679, 2020 | 30 | 2020 |
| High-temperature characterization of a 1.2-kV SiC MOSFET using dynamic short-circuit measurement technique J Sun, S Yang, H Xu, L Zhang, X Wu, K Sheng, KJ Chen IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 215-222, 2019 | 22 | 2019 |
| Threshold Voltage Instability of Enhancement-Mode GaN Buried p-Channel MOSFETs Z Zheng, L Zhang, W Song, T Chen, S Feng, YH Ng, J Sun, H Xu, S Yang, ... IEEE Electron Device Letters 42 (11), 1584-1587, 2021 | 21 | 2021 |
| Distinct short circuit capability of 650-V p-GaN gate HEMTs under single and repetitive tests J Sun, J Wei, Z Zheng, G Lyu, KJ Chen 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 20 | 2020 |
| Electrical characterization of 1.2 kV SiC MOSFET at extremely high junction temperature J Sun, H Xu, S Yang, K Sheng 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 13 | 2018 |
| Short-circuit failure mechanisms of 650-V GaN/SiC cascode devices in comparison with SiC MOSFETs J Sun, K Zhong, Z Zheng, G Lyu, KJ Chen IEEE Transactions on Industrial Electronics 69 (7), 7340-7348, 2021 | 11 | 2021 |
| Gate Reliability of Schottky-Type p-GaN Gate HEMTs Under AC Positive Gate Bias Stress With a Switching Drain Bias Y Cheng, J He, H Xu, K Zhong, Z Zheng, J Sun, KJ Chen IEEE Electron Device Letters 43 (9), 1404-1407, 2022 | 10 | 2022 |
| Surge capability of 1.2 kV SiC diodes with high-temperature implantation H Xu, J Sun, J Cui, J Wu, H Wang, S Yang, N Ren, K Sheng 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 9 | 2018 |
| Dynamic interplays of gate junctions in schottky-type p-GaN gate power HEMTs during switching operation H Xu, Z Zheng, L Zhang, J Sun, S Yang, J He, J Wei, KJ Chen 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 8 | 2022 |
| 650-V normally-off GaN/SiC cascode device for power switching applications K Zhong, Y Wang, G Lyu, J Wei, J Sun, KJ Chen IEEE Transactions on Industrial Electronics 69 (9), 8997-9006, 2021 | 8 | 2021 |
| Avalanche capability of 650-V normally-off GaN/SiC cascode power device K Zhong, J Sun, Y Wang, G Lyu, S Feng, T Chen, KJ Chen 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 7 | 2021 |
| Repetitive Short Circuit Energy Dependent Instability of 1.2kV SiC Power MOSFETs J Sun, J Wei, Z Zheng, Y Wang, KJ Chen 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 6 | 2019 |
| Impact of drain leakage current on short circuit behavior of GaN/SiC cascode devices J Sun, Z Zheng, K Zhong, G Lyu, KJ Chen IEEE Transactions on Power Electronics 36 (11), 12158-12162, 2021 | 5 | 2021 |
| Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device G Lyu, J Sun, Y Wang, KJ Chen IEEE Transactions on Industrial Electronics 69 (12), 12773-12783, 2021 | 4 | 2021 |
| Static and Dynamic Characteristics of a 1200-V/22-mΩ Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT G Lyu, J Sun, J Wei, KJ Chen IEEE Transactions on Power Electronics, 2023 | 3 | 2023 |
Kevin J. ChenHong Kong University of Science and Technology在 ust.hk 的电子邮件经过验证
