Carbon nanotube complementary wrap-gate transistors AD Franklin, SO Koswatta, DB Farmer, JT Smith, L Gignac, CM Breslin, ... Nano letters 13 (6), 2490-2495, 2013 | 229 | 2013 |
Selective sputtering for pattern transfer M Hoinkis, H Miyazoe, E Joseph US Patent 9,493,879, 2016 | 187 | 2016 |
Copper residue chamber clean M Hoinkis, C Yan, H Miyazoe, E Joseph US Patent 9,114,438, 2015 | 181 | 2015 |
Two-Dimensional Pattern Formation Using Graphoepitaxy of PS-b-PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication H Tsai, JW Pitera, H Miyazoe, S Bangsaruntip, SU Engelmann, CC Liu, ... ACS nano 8 (5), 5227-5232, 2014 | 176 | 2014 |
Effect of annealing on the mobility and morphology of thermally activated pentacene thin film transistors D Guo, S Ikeda, K Saiki, H Miyazoe, K Terashima Journal of applied physics 99 (9), 2006 | 111 | 2006 |
Metal-oxide based, CMOS-compatible ECRAM for deep learning accelerator S Kim, T Todorov, M Onen, T Gokmen, D Bishop, P Solomon, KT Lee, ... 2019 IEEE International Electron Devices Meeting (IEDM), 35.7. 1-35.7. 4, 2019 | 68 | 2019 |
Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around AD Franklin, SO Koswatta, D Farmer, GS Tulevski, JT Smith, H Miyazoe, ... 2012 International Electron Devices Meeting, 4.5. 1-4.5. 4, 2012 | 43 | 2012 |
Sub-30 nm pitch line-space patterning of semiconductor and dielectric materials using directed self-assembly HY Tsai, H Miyazoe, S Engelmann, B To, E Sikorski, J Bucchignano, ... Journal of Vacuum Science & Technology B 30 (6), 2012 | 42 | 2012 |
A study on OTS-PCM pillar cell for 3-D stackable memory WC Chien, CW Yeh, RL Bruce, HY Cheng, IT Kuo, CH Yang, A Ray, ... IEEE Transactions on Electron Devices 65 (11), 5172-5179, 2018 | 39 | 2018 |
The influence of process parameters on precursor evaporation for alumina nanopowder synthesis in an inductively coupled rf thermal plasma JW Shin, H Miyazoe, M Leparoux, S Siegmann, JL Dorier, C Hollenstein Plasma Sources Science and Technology 15 (3), 441, 2006 | 38 | 2006 |
Pulsed laser ablation synthesis of diamond molecules in supercritical fluids S Nakahara, S Stauss, H Miyazoe, T Shizuno, M Suzuki, H Kataoka, ... Applied Physics Express 3 (9), 096201, 2010 | 35 | 2010 |
Graphoepitaxy of sexithiophene on thermally oxidized silicon surface with artificial periodic grooves S Ikeda, K Saiki, K Tsutsui, T Edura, Y Wada, H Miyazoe, K Terashima, ... Applied physics letters 88 (25), 2006 | 34 | 2006 |
Pathway to the piezoelectronic transduction logic device PM Solomon, BA Bryce, MA Kuroda, R Keech, S Shetty, TM Shaw, ... Nano letters 15 (4), 2391-2395, 2015 | 33 | 2015 |
Tone inversion of self-assembled self-aligned structures MA Guillorn, SJ Holmes, C Liu, H Miyazoe, H Tsai US Patent 8,771,929, 2014 | 33 | 2014 |
Systematic studies on reactive ion etch-induced deformations of organic underlayers M Glodde, S Engelmann, M Guillorn, S Kanakasabapathy, E Mclellan, ... Advances in Resist Materials and Processing Technology XXVIII 7972, 360-367, 2011 | 32 | 2011 |
Resistivity of copper interconnects beyond the 7 nm node A Pyzyna, R Bruce, M Lofaro, H Tsai, C Witt, L Gignac, M Brink, M Guillorn, ... 2015 Symposium on VLSI Technology (VLSI Technology), T120-T121, 2015 | 31 | 2015 |
Electron beam generated plasmas: Characteristics and etching of silicon nitride SG Walton, DR Boris, SC Hernández, EH Lock, TB Petrova, GM Petrov, ... Microelectronic Engineering 168, 89-96, 2017 | 30 | 2017 |
Improving the metallic content of focused electron beam-induced deposits by a scanning electron microscope integrated hydrogen-argon microplasma generator H Miyazoe, I Utke, H Kikuchi, S Kiriu, V Friedli, J Michler, K Terashima Journal of Vacuum Science & Technology B, Nanotechnology and …, 2010 | 30 | 2010 |
Controlled focused electron beam-induced etching for the fabrication of sub-beam-size nanoholes H Miyazoe, I Utke, J Michler, K Terashima Applied Physics Letters 92 (4), 2008 | 30 | 2008 |
Low energy etch process for nitrogen-containing dielectric layer M Brink, RL Bruce, SU Engelmann, NCM Fuller, H Miyazoe, M Nakamura US Patent 9,190,316, 2015 | 29 | 2015 |