| MEMS for photonic integrated circuits C Errando-Herranz, AY Takabayashi, P Edinger, H Sattari, KB Gylfason, ... IEEE Journal of Selected Topics in Quantum Electronics 26 (2), 1-16, 2019 | 276 | 2019 |
| Recent advances in avalanche photodiodes JC Campbell, S Demiguel, F Ma, A Beck, X Guo, S Wang, X Zheng, X Li, ... IEEE Journal of selected topics in quantum electronics 10 (4), 777-787, 2004 | 247 | 2004 |
| Transverse magnetic mode nonreciprocal propagation in an amplifying AlGaInAs∕ InP optical waveguide isolator W Van Parys, B Moeyersoon, D Van Thourhout, R Baets, ... Applied Physics Letters 88 (7), 2006 | 116 | 2006 |
| High Gain Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes A Rouvie, DÉ Carpentier, N Lagay, J Decobert, F Pommereau, ... IEEE Photonics Technology Letters 20 (6), 455-457, 2008 | 66 | 2008 |
| Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP heterointerfaces grown by metalorganic vapor-phase epitaxy J Decobert, G Patriarche Journal of Applied Physics 92 (10), 5749-5755, 2002 | 60 | 2002 |
| Compact InP-based DFB-EAM enabling PAM-4 112 Gb/s transmission over 2 km MA Mestre, H Mardoyan, C Caillaud, R Rios-Müller, J Renaudier, ... Journal of Lightwave Technology 34 (7), 1572-1578, 2016 | 55 | 2016 |
| Thermal optimization of 1.55 μm OP-VECSEL with hybrid metal–metamorphic mirror for single-mode high power operation JP Tourrenc, S Bouchoule, A Khadour, JC Harmand, A Miard, J Decobert, ... Optical and Quantum Electronics 40, 155-165, 2008 | 53 | 2008 |
| Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes S Demiguel, L Giraudet, L Joulaud, J Decobert, F Blache, V Coupe, ... Journal of lightwave technology 20 (12), 2004, 2002 | 53 | 2002 |
| New advances on heterogeneous integration of III–V on silicon GH Duan, S Olivier, S Malhouitre, A Accard, P Kaspar, G de Valicourt, ... Journal of Lightwave Technology 33 (5), 976-983, 2015 | 51 | 2015 |
| SWIR InGaAs focal plane arrays in France A Rouvié, O Huet, S Hamard, JP Truffer, M Pozzi, J Decobert, E Costard, ... Infrared Technology and Applications XXXIX 8704, 12-20, 2013 | 48 | 2013 |
| InGaAs focal plane array developments at III-V Lab A Rouvié, JL Reverchon, O Huet, A Djedidi, JA Robo, JP Truffer, T Bria, ... Infrared Technology and Applications XXXVIII 8353, 96-107, 2012 | 45 | 2012 |
| Design, optimization, and fabrication of side-illuminated pin photodetectors with high responsivity and high alignment tolerance for 1.3-and 1.55-µm wavelength use V Magnin, L Giraudet, J Harari, J Decobert, P Pagnot, E Boucherez, ... Journal of Lightwave Technology 20 (3), 477, 2002 | 45 | 2002 |
| Ultrafast response (∼ 2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 μm J Mangeney, L Joulaud, P Crozat, JM Lourtioz, J Decobert Applied physics letters 83 (26), 5551-5553, 2003 | 44 | 2003 |
| Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy J Décobert, N Dupuis, PY Lagrée, N Lagay, A Ramdane, A Ougazzaden, ... Journal of crystal growth 298, 28-31, 2007 | 43 | 2007 |
| 240-GHz gain-bandwidth product back-side illuminated AlInAs avalanche photodiodes M Lahrichi, G Glastre, E Derouin, D Carpentier, N Lagay, J Decobert, ... IEEE Photonics Technology Letters 22 (18), 1373-1375, 2010 | 42 | 2010 |
| Growth and characterization of type-II/type-I AlGaInAs/InP interfaces M Sacilotti, F Motisuke, Y Monteil, P Abraham, F Iikawa, C Montes, ... Journal of crystal growth 124 (1-4), 589-595, 1992 | 40 | 1992 |
| MOVPE growth of AlGaInAs–InP highly tensile-strained MQWs for 1.3 μm low-threshold lasers J Decobert, N Lagay, C Cuisin, B Dagens, B Thedrez, F Laruelle Journal of crystal growth 272 (1-4), 543-548, 2004 | 39 | 2004 |
| 10Gbit/s amplified reflective electroabsorption modulator for colourless access networks A Garreau, J Decobert, C Kazmierski, MC Cuisin, JG Provost, H Sillard, ... 2006 International Conference on Indium Phosphide and Related Materials …, 2006 | 38 | 2006 |
| Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration R Cariou, W Chen, JL Maurice, J Yu, G Patriarche, O Mauguin, L Largeau, ... Scientific Reports 6 (1), 25674, 2016 | 36 | 2016 |
| Hybrid III-V silicon photonic integrated circuits for optical communication applications GH Duan, S Olivier, C Jany, S Malhouitre, A Le Liepvre, A Shen, ... IEEE Journal of Selected Topics in Quantum Electronics 22 (6), 379-389, 2016 | 35 | 2016 |
Nicolas VaissiereIII-V Lab/Nokia Bell Labs在 3-5lab.fr 的电子邮件经过验证
