| High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization CH Lin, B Greene, S Narasimha, J Cai, A Bryant, C Radens, V Narayanan, ... 2014 IEEE International Electron Devices Meeting, 3.8. 1-3.8. 3, 2014 | 183 | 2014 |
| High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography P Agnello, T Ivers, C Warm, R Wise, R Wachnik, D Schepis, S Sankaran, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 132 | 2006 |
| Binary OPC for assist feature layout optimization LW Liebmann, RA Ferguson, AH Gabor, MA Lavin US Patent 7,001,693, 2006 | 99 | 2006 |
| RTA-driven intra-die variations in stage delay, and parametric sensitivities for 65nm technology B Walsh, H Utomo, E Leobandung, A Mahorowala, D Mocuta, K Miyamoto, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 170-171, 2006 | 95 | 2006 |
| Imaging polymers with supercritical carbon dioxide CK Ober, AH Gabor, P Gallagher‐Wetmore, RD Allen Advanced Materials 9 (13), 1039-1043, 1997 | 93 | 1997 |
| A high performance 90nm SOI technology with 0.992 /spl mu/m2 6T-SRAM cell M Khare, SH Ku, RA Donaton, S Greco, C Brodsky, X Chen, A Chou, ... Digest. International Electron Devices Meeting,, 407-410, 2002 | 64 | 2002 |
| Lithographic properties of poly (tert-butyl methacrylate)-based block and random copolymer resists designed for 193 nm wavelength exposure tools AH Gabor, LC Pruette, CK Ober Chemistry of materials 8 (9), 2282-2290, 1996 | 54 | 1996 |
| Silicon containing polymer in applications for 193-nm high-NA lithography processes S Burns, D Pfeiffer, A Mahorowala, K Petrillo, A Clancy, K Babich, ... Advances in Resist Technology and Processing XXIII 6153, 201-212, 2006 | 52 | 2006 |
| Synthesis and lithographic characterization of block copolymer resists consisting of both poly (styrene) blocks and hydrosiloxane-modified poly (diene) blocks AH Gabor, EA Lehner, G Mao, LA Schneggenburger, CK Ober Chemistry of materials 6 (7), 927-934, 1994 | 51 | 1994 |
| Block and random copolymer resists designed for 193-nm lithography and environmentally friendly supercritical CO2 development AH Gabor, RD Allen, PM Gallagher-Wetmore, CK Ober Advances in Resist Technology and Processing XIII 2724, 410-417, 1996 | 49 | 1996 |
| Silicon-containing block copolymer resist materials AH Gabor, CK Ober | 46 | 1995 |
| Line-edge roughness performance targets for EUV lithography TA Brunner, X Chen, A Gabor, C Higgins, L Sun, CA Mack Extreme Ultraviolet (EUV) Lithography VIII 10143, 48-57, 2017 | 45 | 2017 |
| Supercritical fluid processing: Opportunities for new resist materials and processes PM Gallagher-Wetmore, CK Ober, AH Gabor, RD Allen Metrology, Inspection, and Process Control for Microlithography X 2725, 289-299, 1996 | 45 | 1996 |
| Pitch-based subresolution assist feature design LW Liebmann, AH Gabor, RL Gordon, CA Fonseca, M Burkhardt US Patent 6,964,032, 2005 | 34 | 2005 |
| Composite structures to prevent pattern collapse CJ Brodsky, AH Gabor, J Perez US Patent 7,799,503, 2010 | 31 | 2010 |
| Overlay improvement roadmap: strategies for scanner control and product disposition for 5-nm overlay NM Felix, AH Gabor, VC Menon, PP Longo, SD Halle, C Koay, ... Metrology, Inspection, and Process Control for Microlithography XXV 7971 …, 2011 | 30 | 2011 |
| Photogenerators of sulfamic acids; use in chemically amplified single layer resists K JM, T AG, M AN, B JJ Journal of Photopolymer Science and Technology 11 (3), 419-429, 1998 | 30 | 1998 |
| Sidewall image transfer process with multiple critical dimensions S Raghunathan, S Kanakasabapathy, RO Jung, AH Gabor, SD Burns, ... US Patent 8,673,165, 2014 | 29 | 2014 |
| Bilayer resist and process for preparing same CK Ober, AH Gabor, EA Lehner, G Mao, LA Schneggenburger US Patent 5,318,877, 1994 | 29 | 1994 |
| 193 nm single layer resist strategies, concepts, and recent results O Nalamasu, FM Houlihan, RA Cirelli, AG Timko, GP Watson, RS Hutton, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998 | 27 | 1998 |
