| Nanofocused X-ray beam to reprogram secure circuits S Anceau, P Bleuet, J Clédière, L Maingault, J Rainard, R Tucoulou Cryptographic Hardware and Embedded Systems–CHES 2017: 19th International …, 2017 | 67 | 2017 |
| Determination of built-in electric fields in quaternary InAlGaN heterostructures H Teisseyre, T Suski, SP Łepkowski, S Anceau, P Perlin, P Lefebvre, ... Applied physics letters 82 (10), 1541-1543, 2003 | 31 | 2003 |
| Time-resolved spectroscopy of (Al, Ga, In) N based quantum wells: Localization effects and effective reduction of internal electric fields P Lefebvre, S Anceau, P Valvin, T Taliercio, L Konczewicz, T Suski, ... Physical Review B 66 (19), 195330, 2002 | 31 | 2002 |
| Optical properties of ZnO nanorods and nanowires A Mézy, S Anceau, T Bretagnon, P Lefebvre, T Taliercio, GC Yi, J Yoo Superlattices and Microstructures 39 (1-4), 358-365, 2006 | 19 | 2006 |
| Electrical modeling of the effect of photoelectric laser fault injection on bulk cmos design L Hériveaux, J Clédière, S Anceau International Symposium for Testing and Failure Analysis 80224, 361-368, 2013 | 15 | 2013 |
| Laboratory x-rays operando single bit attacks on flash memory cells L Maingault, S Anceau, M Sulmont, L Salvo, J Clédière, P Lhuissier, ... International Conference on Smart Card Research and Advanced Applications …, 2021 | 8 | 2021 |
| Surprisingly low built‐in electric fields in quaternary AlInGaN heterostructures S Anceau, P Lefebvre, T Suski, SP Łepkowski, H Teisseyre, LH Dmowski, ... physica status solidi (a) 201 (2), 190-194, 2004 | 5 | 2004 |
| Etude des propriétés physiques des puits quantiques d'alliages quaternaires (Al, Ga, In) N pour la conception d'émetteurs ultraviolets| Theses. fr S Anceau Montpellier 2, 2004 | 4 | 2004 |
| X ray nanoprobe for fault attacks and circuit edits on 28-nm integrated circuits S Bouat, S Anceau, L Maingault, J Clédière, L Salvo, R Tucoulou 2023 IEEE International Symposium on Defect and Fault Tolerance in VLSI and …, 2023 | 1 | 2023 |
| Backside Shield against Physical Attacks for Secure ICs S Borel, E Deschaseaux, J Charbonnier, P Medina, S Anceau, J Cledière, ... Device Packaging, 1-15, 2017 | 1 | 2017 |
| Enhancement of localization and confinement effects in quaternary group‐III nitride multi‐quantum wells on SiC substrate S Anceau, P Lefebvre, T Suski, L Konczewicz, H Hirayama, Y Aoyagi physica status solidi (a) 202 (4), 642-646, 2005 | 1 | 2005 |
| Small Built‐in Electric Fields in Quaternary InAlGaN Heterostructures H Teisseyre, T Suski, SP Łepkowski, S Anceau, P Perlin, P Lefebvre, ... physica status solidi (b) 234 (3), 764-768, 2002 | 1 | 2002 |
| Amélioration de l’efficacité radiative dans les puits quantiques à base d’(Al, Ga, In) N pour les composants optoélectroniques S Anceau, P Lefebvre, T Suski, L Konczewicz, H Hirayama, Y Aoyagi Journées du GDR" Semiconducteurs à Grands Gaps"., 2004 | | 2004 |
| Small Internal Electric Fields in Quaternary InAlGaN Heterostructures S Anceau, SP Łepkowski, H Teisseyre, T Suski, P Perlin, P Lefebvre, ... UV Solid-State Light Emitters and Detectors, 215-222, 2004 | | 2004 |
| Evolution of internal electric fields with the wel thickness of quaternary InAlGaN quantum wells S Anceau, H Teisseyre, T Suski, S Lepkowsky, L Konczewicz, P Lefebvre, ... Joint 19th AIRAPT-41th EHPRG Int. Conf. on High Pressure Science and Technology, 2003 | | 2003 |
| Internal electric fields in quaternary InAlGaN heterostructures H Teisseyre, T Suski, S Lepkowsky, S Anceau, P Perlin, P Lefebvre, ... 5th International Conference on Nitride Semiconductors-ICNS 5., 2003 | | 2003 |
| Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Time-resolved spectroscopy of (Al, Ga, In) N based quantum wells: Localization effects and … P Lefebvre, S Anceau, P Valvin, T Taliercio, L Konczewicz, T Suski, ... Physical Review-Section B-Condensed Matter 66 (19), 195330-195330, 2002 | | 2002 |
