| A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications H Sheoran, V Kumar, R Singh ACS Applied Electronic Materials 4 (6), 2589-2628, 2022 | 54 | 2022 |
| Temperature-dependent electrical characteristics of Ni/Au vertical Schottky barrier diodes on β-Ga2O3 epilayers H Sheoran, BR Tak, N Manikanthababu, R Singh ECS Journal of Solid State Science and Technology 9 (5), 055004, 2020 | 45 | 2020 |
| High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga2O3-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature … H Sheoran, S Fang, F Liang, Z Huang, S Kaushik, N Manikanthababu, ... ACS Applied Materials & Interfaces 14 (46), 52096-52107, 2022 | 35 | 2022 |
| Rapidly responding room temperature NO2 gas sensor based on SnSe nanostructured film S Rani, M Kumar, H Sheoran, R Singh, VN Singh Materials Today Communications 30, 103135, 2022 | 34 | 2022 |
| Review of Radiation-Induced Effects on β-Ga2O3 Materials and Devices N Manikanthababu, H Sheoran, P Siddham, R Singh Crystals 12 (7), 1009, 2022 | 16 | 2022 |
| Deep-ultraviolet photodetectors based on hexagonal boron nitride nanosheets enhanced by localized surface plasmon resonance in Al nanoparticles S Kaushik, S Karmakar, RK Varshney, H Sheoran, D Chugh, C Jagadish, ... ACS Applied Nano Materials 5 (5), 7481-7491, 2022 | 12 | 2022 |
| Investigation of a vertical 2D/3D semiconductor heterostructure based on GaSe and Ga2O3 S Sorifi, S Kaushik, H Sheoran, R Singh Journal of Physics D: Applied Physics 55 (36), 365105, 2022 | 10 | 2022 |
| Electrical characteristics and defect dynamics induced by swift heavy ion irradiation in Pt/PtO/-Ga₂O₃ vertical Schottky barrier diodes N Manikanthababu, H Sheoran, K Prajna, SA Khan, K Asokan, JV Vas, ... IEEE Transactions on Electron Devices 69 (11), 5996-6001, 2022 | 8 | 2022 |
| Exploring current conduction mechanisms in 6 MeV ion irradiated Au/SiO2/beta-Ga2O3 metal-oxide-semiconductor devices N Manikanthababu, BR Tak, H Sheoran, K Prajna, BK Panigrahi, R Singh 2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2020 | 8 | 2020 |
| Study of electrical characteristics of high quality Pt SBDs fabricated on HVPE-Grown β-Ga2O3 epilayers in a wide temperature range (80–525 K) H Sheoran, JK Kaushik, R Singh Materials Science in Semiconductor Processing 165, 107606, 2023 | 4 | 2023 |
| High-performance and low-power consumption deep UV photodetectors based on MOCVD-grown ZnGa2O4 epilayers with high temperature functionality T Khan, H Sheoran, FG Tarntair, RH Horng, R Singh Materials Science in Semiconductor Processing 179, 108418, 2024 | 1 | 2024 |
| Investigation of High Performance Schottky Diodes on Ga2O3 Epilayer using Cu with High Barrier Height, High Temperature Stability and Repeatability H Sheoran, R Singh Journal of Physics D: Applied Physics 56 (40), 405113, 2023 | 1 | 2023 |
| Synthesis of a large area ReS 2 thin film by CVD for in-depth investigation of resistive switching: effects of metal electrodes, channel width and noise behaviour P Aggarwal, H Sheoran, P Bisht, OK Prasad, CH Chung, EY Chang, ... Nanoscale 15 (34), 14109-14121, 2023 | 1 | 2023 |
| MBE-grown ZnTe epitaxial layer based broadband photodetector with high response and excellent switching characteristics S tyagi, H Sheoran, UR Meena, S Tiwari, P Mishra, S Kumar, R Singh Semiconductor Science and Technology, 2024 | | 2024 |
| Investigation of Traps in AlGaN/GaN HEMT Epitaxial Structure Using Conductance Method Chanchal, AK Visvkarma, H Sheoran, A Malik, R Laishram, DS Rawal, ... International Symposium on VLSI Design and Test, 76-84, 2022 | | 2022 |
| Review of Radiation-Induced Effects on β-Ga2O3 Materials and Devices. Crystals 2022, 12, 1009 N Manikanthababu, H Sheoran, P Siddham, R Singh s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2022 | | 2022 |
Rajendra SinghIndian Institute of Technology Delhi在 physics.iitd.ac.in 的电子邮件经过验证
