| Molecular Self-Assembly on Graphene on SiO2 and h-BN Substrates P Jarvinen, SK Hamalainen, K Banerjee, P Hakkinen, M Ijas, A Harju, ... Nano letters 13 (7), 3199-3204, 2013 | 151 | 2013 |
| Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini, ... 2018 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2018 | 135 | 2018 |
| Molecular assembly on two-dimensional materials A Kumar, K Banerjee, P Liljeroth Nanotechnology 28 (8), 082001, 2017 | 132 | 2017 |
| Capacitor-less, long-retention (> 400s) DRAM cell paving the way towards low-power and high-density monolithic 3D DRAM A Belmonte, H Oh, N Rassoul, GL Donadio, J Mitard, H Dekkers, ... 2020 IEEE International Electron Devices Meeting (IEDM), 28.2. 1-28.2. 4, 2020 | 99 | 2020 |
| Two-dimensional band structure in honeycomb metal–organic frameworks A Kumar, K Banerjee, AS Foster, P Liljeroth Nano letters 18 (9), 5596-5602, 2018 | 90 | 2018 |
| Charge-Transfer-Driven Nonplanar Adsorption of F4TCNQ Molecules on Epitaxial Graphene A Kumar, K Banerjee, M Dvorak, F Schulz, A Harju, P Rinke, P Liljeroth ACS nano 11 (5), 4960-4968, 2017 | 63 | 2017 |
| Flexible self-assembled molecular templates on graphene K Banerjee, A Kumar, FF Canova, S Kezilebieke, AS Foster, P Liljeroth The Journal of Physical Chemistry C 120 (16), 8772-8780, 2016 | 43 | 2016 |
| Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 103s retention, >1011 cycles endurance and Lg scalability down to 14nm A Belmonte, H Oh, S Subhechha, N Rassoul, H Hody, H Dekkers, ... 2021 IEEE International Electron Devices Meeting (IEDM), 10.6. 1-10.6. 4, 2021 | 42 | 2021 |
| Analog in-memory computing in FeFET-based 1T1R array for edge AI applications D Saito, T Kobayashi, H Koga, N Ronchi, K Banerjee, Y Shuto, J Okuno, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 42 | 2021 |
| First demonstration of sub-12 nm Lg gate last IGZO-TFTs with oxygen tunnel architecture for front gate devices S Subhechha, N Rassoul, A Belmonte, R Delhougne, K Banerjee, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 39 | 2021 |
| Impact of Charge trapping on Imprint and its Recovery in HfO2 based FeFET Y Higashi, N Ronchi, B Kaczer, K Banerjee, SRC McMitchell, ... 2019 IEEE International Electron Devices Meeting (IEDM), 15.6. 1-15.6. 4, 2019 | 37 | 2019 |
| Defect profiling in FEFET Si: HfO2 layers BJ O'sullivan, V Putcha, R Izmailov, V Afanas' ev, E Simoen, T Jung, ... Applied Physics Letters 117 (20), 2020 | 28 | 2020 |
| Investigation of imprint in FE-HfO₂ and its recovery Y Higashi, B Kaczer, AS Verhulst, BJ O’Sullivan, N Ronchi, ... IEEE Transactions on Electron Devices 67 (11), 4911-4917, 2020 | 27 | 2020 |
| High-endurance ferroelectric (La, Y) and (La, Gd) Co-doped hafnium zirconate grown by atomic layer deposition MI Popovici, AM Walke, J Bizindavyi, J Meersschaut, K Banerjee, ... ACS Applied Electronic Materials 4 (4), 1823-1831, 2022 | 26 | 2022 |
| Electrical investigation of wake-up in high endurance fatigue-free La and Y doped HZO metal–ferroelectric–metal capacitors AM Walke, MI Popovici, K Banerjee, S Clima, P Kumbhare, J Desmet, ... IEEE Transactions on Electron Devices 69 (8), 4744-4749, 2022 | 25 | 2022 |
| New Insights into the Imprint Effect in FE-HfO2 and its Recovery Y Higashi, K Florent, A Subirats, B Kaczer, L Di Piazza, S Clima, N Ronchi, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019 | 21 | 2019 |
| Ferroelectric La Doped ZrO2/HfxZr1‐xO2 Bi‐Layer Stacks with Enhanced Endurance M Popovici, AM Walke, K Banerjee, N Ronchi, J Meersschaut, U Celano, ... physica status solidi (RRL)–Rapid Research Letters, 2021 | 18 | 2021 |
| Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P–V and I–V in HfO₂-Based Ferroelectric FET Y Higashi, N Ronchi, B Kaczer, MNK Alam, BJ O’Sullivan, K Banerjee, ... IEEE Transactions on Electron Devices 68 (9), 4391-4396, 2021 | 15 | 2021 |
| Strain-compensated GaPN/GaP heterostructure on (0 0 1) silicon substrates for intermediate band solar cells S Nagarajan, H Jussila, J Lemettinen, K Banerjee, M Sopanen, ... Journal of Physics D: Applied Physics 46 (16), 165103, 2013 | 15 | 2013 |
| Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor J Min, N Ronchi, SRC McMitchell, B O’Sullivan, K Banerjee, J Van Houdt, ... IEEE Electron Device Letters 42 (9), 1280-1283, 2021 | 14 | 2021 |
Nicolo' RonchiR&D Engineer, imec, Belgium在 imec.be 的电子邮件经过验证
