| 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density R Suzuki, N Taoka, M Yokoyama, S Lee, SH Kim, T Hoshii, T Yasuda, ... Applied Physics Letters 100 (13), 2012 | 190 | 2012 |
| Self-aligned metal source/drain In x Ga 1− x As n-MOSFETs using Ni-InGaAs alloy SH Kim, M Yokoyama, N Taoka, R Iida, S Lee, R Nakane, Y Urabe, ... Electron Devices Meeting (IEDM), 2010 IEEE International, 26.6. 1-26.6. 4, 2010 | 138* | 2010 |
| A highly-efficient, concentrating-photovoltaic/thermoelectric hybrid generator TH Kil, S Kim, DH Jeong, DM Geum, S Lee, SJ Jung, S Kim, C Park, ... Nano energy 37, 242-247, 2017 | 108 | 2017 |
| III–V/Ge channel MOS device technologies in nano CMOS era S Takagi, R Zhang, J Suh, SH Kim, M Yokoyama, K Nishi, M Takenaka Japanese Journal of Applied Physics 54 (6S1), 06FA01, 2015 | 106 | 2015 |
| High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions M Noguchi, SH Kim, M Yokoyama, O Ichikawa, T Osada, M Hata, ... Journal of Applied Physics 118 (4), 2015 | 97 | 2015 |
| High mobility CMOS technologies using III–V/Ge channels on Si platform S Takagi, SH Kim, M Yokoyama, R Zhang, N Taoka, Y Urabe, T Yasuda, ... Solid-state electronics 88, 2-8, 2013 | 96 | 2013 |
| Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications WJC Dae-Myeong Geum, Min-Su Park, Ju Young Lim, Hyun-Duk Yang, Jin Dong Song ... Scientific Reports 6 (20610), 2016 | 85 | 2016 |
| Fabrication of a vertically-stacked passive-matrix micro-LED array structure for a dual color display CM Kang, DJ Kong, JP Shim, S Kim, SB Choi, JY Lee, JH Min, DJ Seo, ... Optics Express 25 (3), 2489-2495, 2017 | 74 | 2017 |
| Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin Buried Oxide Layers M Yokoyama, R Iida, S Kim, N Taoka, Y Urabe, H Takagi, T Yasuda, ... IEEE electron device letters 32 (9), 1218-1220, 2011 | 74 | 2011 |
| Hybrid full-color inorganic light-emitting diodes integrated on a single wafer using selective area growth and adhesive bonding CM Kang, JY Lee, DJ Kong, JP Shim, S Kim, SH Mun, SY Choi, MD Park, ... ACS photonics 5 (11), 4413-4422, 2018 | 68 | 2018 |
| High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and Tunability SH Kim, M Yokoyama, R Nakane, O Ichikawa, T Osada, M Hata, ... IEEE Transactions on Electron Devices 61 (5), 1354-1360, 2014 | 68 | 2014 |
| Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission CM Kang, SJ Kang, SH Mun, SY Choi, JH Min, S Kim, JP Shim, DS Lee Scientific reports 7 (1), 1-9, 2017 | 62 | 2017 |
| Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding M Yokoyama, R Iida, SH Kim, N Taoka, Y Urabe, T Yasuda, H Takagi, ... 2010 International Electron Devices Meeting, 3.1. 1-3.1. 4, 2010 | 62 | 2010 |
| Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation N Taoka, M Yokoyama, SH Kim, R Suzuki, R Iida, S Lee, T Hoshii, ... 2011 International Electron Devices Meeting, 27.2. 1-27.2. 4, 2011 | 61 | 2011 |
| Formation of III–V-on-insulator structures on Si by direct wafer bonding M Yokoyama, R Iida, Y Ikku, S Kim, H Takagi, T Yasuda, H Yamada, ... Semiconductor science and technology 28 (9), 094009, 2013 | 60 | 2013 |
| III-V/Ge MOS device technologies for low power integrated systems MT S Takagi, M Noguchi, M Kim, S-H Kim, C-Y Chang, M Yokoyama, K Nishi, R ... Solid-State Electronics, 2016 | 56 | 2016 |
| Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding interface-engineered vertical stacking and surface passivation DM Geum, SK Kim, CM Kang, SH Moon, J Kyhm, JH Han, DS Lee, ... Nanoscale 11, 23139-23148, 2019 | 53 | 2019 |
| Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties R Suzuki, N Taoka, M Yokoyama, SH Kim, T Hoshii, T Maeda, T Yasuda, ... Journal of Applied Physics 112 (8), 2012 | 53 | 2012 |
| CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding M Yokoyama, SH Kim, R Zhang, N Taoka, Y Urabe, T Maeda, H Takagi, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 60-61, 2011 | 53 | 2011 |
| High-performance InAs-on-insulator n-MOSFETs with Ni-InGaAs S/D realized by contact resistance reduction technology SH Kim, M Yokoyama, R Nakane, O Ichikawa, T Osada, M Hata, ... IEEE transactions on electron devices 60 (10), 3342-3350, 2013 | 52 | 2013 |
Shinichi TakagiThe University of Tokyo在 ee.t.u-tokyo.ac.jp 的电子邮件经过验证
