| Growth of gallium nitride nanowires on sapphire and silicon by chemical vapor deposition for water splitting applications L Ravi, K Boopathi, P Panigrahi, B Krishnan Applied Surface Science 449, 213-220, 2018 | 34 | 2018 |
| Structural and optical characterization of AlGaN/GaN layers M Jayasakthi, R Ramesh, P Arivazhagan, R Loganathan, K Prabakaran, ... Journal of crystal growth 401, 527-531, 2014 | 27 | 2014 |
| Influence of initial growth stages on AlN epilayers grown by metal organic chemical vapor deposition M Balaji, R Ramesh, P Arivazhagan, M Jayasakthi, R Loganathan, ... Journal of crystal growth 414, 69-75, 2015 | 23 | 2015 |
| Studies on dislocation and surface morphology of AlxGa1− xN/GaN heterostructures grown by MOCVD R Loganathan, M Jayasakthi, K Prabakaran, R Ramesh, P Arivazhagan, ... Journal of alloys and compounds 616, 363-371, 2014 | 22 | 2014 |
| Large area ultraviolet photodetector on surface modified Si: GaN layers R Anitha, R Ramesh, R Loganathan, DS Vavilapalli, K Baskar, S Singh Applied Surface Science 435, 1057-1064, 2018 | 21 | 2018 |
| Effect of growth temperature on InGaN/GaN heterostructures grown by MOCVD S Surender, K Prabakaran, R Loganathan, S Pradeep, S Singh, K Baskar Journal of Crystal Growth 468, 249-251, 2017 | 17 | 2017 |
| The effect of growth temperature on structural quality of AlInGaN/AlN/GaN heterostructures grown by MOCVD R Loganathan, M Balaji, K Prabakaran, R Ramesh, M Jayasakthi, ... Journal of Materials Science: Materials in Electronics 26, 5373-5380, 2015 | 9 | 2015 |
| Controlled nucleation and growth of nanostructures by employing surface modified GaN based layers/heterostructures as bottom layer R Ramesh, R Loganathan, SS Menon, K Baskar, S Singh RSC Advances 4 (14), 7112-7119, 2014 | 9 | 2014 |
| Effect of gamma irradiation on AlInGaN/AlN/GaN heterostructures grown by MOCVD S Pradeep, R Loganathan, S Surender, K Prabakaran, K Asokan, ... Superlattices and Microstructures 120, 40-47, 2018 | 7 | 2018 |
| Epitaxial growth of AlN microwalls on wet etched GaN template by MOCVD L Ravi, B Krishnan Superlattices and Microstructures 123, 144-153, 2018 | 6 | 2018 |
| Influence of TMIn flow rate on structural and optical quality of AlInGaN/GaN epilayers grown by MOCVD R Loganathan, K Prabakaran, S Pradeep, S Surender, S Singh, K Baskar Journal of Alloys and Compounds 656, 640-646, 2016 | 6 | 2016 |
| Epitaxial Growth of GaN/AlN on h-BN/Si(111) by Metal–Organic Chemical Vapor Deposition: An Interface Analysis L Ravi, MA Rather, KL Lin, CT Wu, TY Yu, KY Lai, JI Chyi ACS Applied Electronic Materials 5 (1), 146-154, 2023 | 5 | 2023 |
| Fabrication of InGaN/Si (111) nanowire heterostructure photoanode for hydrogen generation under visible light L Ravi, P Chauhan, K Boopathi Applied Physics Letters 119 (15), 2021 | 5 | 2021 |
| Cu catalyst assisted growth of GaN nanowires on sapphire substrate for p-type behavior B Kuppulingam, R Loganathan, K Prabakaran, K Baskar Optik 127 (8), 3762-3765, 2016 | 5 | 2016 |
| Structural and carrier dynamics of GaN and AlGaN-based double heterostructures in the UV region P Arivazhagan, R Ramesh, M Jayasakthi, R Loganathan, M Balaji, ... Journal of electronic materials 42, 2486-2491, 2013 | 4 | 2013 |
| Crystal Transformation of Cubic BN Nanoislands to Rhombohedral BN Sheets on AlN for Deep-UV Light-Emitting Diodes CP Huang, MA Rather, CT Wu, R Loganathan, YH Ju, KL Lin, JI Chyi, ... ACS Applied Nano Materials 3 (6), 5285-5290, 2020 | 3 | 2020 |
| Synthesis of GaN fibers by varying precursor concentrations using Electrospinning method GSM P. Muzammil, S. Munawar Basha, R. Loganathan Optik, 2019 | 3 | 2019 |
| Growth and characterization of InXGa1-XN/GaN single quantum well prepared by MOCVD K Prabakaran, R Ramesh, M Jayasakthi, R Loganathan, P Arivazhagan, ... AIP Conference Proceedings 1665 (1), 2015 | 2 | 2015 |
| Effect of Al-mole fraction in grown by MOCVD M Jayasakthi, R Ramesh, K Prabakaran, R Loganathan, B Kuppulingam, ... AIP Conference Proceedings 1591 (1), 1458-1460, 2014 | 2 | 2014 |
| An experimental study of the energy band alignments of B (Al, Ga) N heterojunctions MA Rather, L Ravi, TY Yu, CT Wu, KL Lin, KY Lai, JI Chyi Applied Physics Letters 123 (1), 2023 | 1 | 2023 |
Dr.Raju RameshAalto University, Finland在 aalto.fi 的电子邮件经过验证
