| HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications S Oh, T Kim, M Kwak, J Song, J Woo, S Jeon, IK Yoo, H Hwang IEEE Electron Device Letters 38 (6), 732-735, 2017 | 248 | 2017 |
| Ar plasma treated ZnON transistor for future thin film electronics E Lee, T Kim, A Benayad, HG Kim, S Jeon, GS Park Applied Physics Letters 107 (12), 2015 | 60 | 2015 |
| Effects of high pressure nitrogen annealing on ferroelectric Hf0. 5Zr0. 5O2 films T Kim, J Park, BH Cheong, S Jeon Applied Physics Letters 112 (9), 2018 | 58 | 2018 |
| Pulse switching study on the HfZrO ferroelectric films with high pressure annealing T Kim, S Jeon IEEE Transactions on Electron Devices 65 (5), 1771-1773, 2018 | 55 | 2018 |
| Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film … Y Nam, HO Kim, SH Cho, CS Hwang, T Kim, S Jeon, SH Ko Park Journal of Information Display 17 (2), 65-71, 2016 | 38 | 2016 |
| The Influence of Hydrogen on Defects of In–Ga–Zn–O Semiconductor Thin-Film Transistors With Atomic-Layer Deposition of Al2O3 T Kim, Y Nam, J Hur, SHK Park, S Jeon IEEE Electron Device Letters 37 (9), 1131-1134, 2016 | 32 | 2016 |
| High mobility and high stability glassy metal-oxynitride materials and devices T Kim, E Lee, A Benayad, J Hur, GS Park, S Jeon Scientific reports 6 (1), 1-10, 2016 | 30* | 2016 |
| Fast transient charging behavior of HfInZnO thin-film transistor T Kim, JH Hur, S Jeon Applied Physics Letters 107 (9), 2015 | 26 | 2015 |
| Evolution of crystallographic structure and ferroelectricity of Hf0. 5Zr0. 5O2 films with different deposition rate T Kim, M An, S Jeon AIP Advances 10 (1), 2020 | 24 | 2020 |
| The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors T Kim, J Hur, S Jeon Semiconductor Science and Technology 31 (5), 055014, 2016 | 22 | 2016 |
| Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High … V Gaddam, G Kim, T Kim, M Jung, C Kim, S Jeon ACS Applied Materials & Interfaces 14 (38), 43463-43473, 2022 | 19 | 2022 |
| Defects and charge-trapping mechanisms of double-active-layer In–Zn–O and Al–Sn–Zn–In–O thin-film transistors Y Goh, T Kim, JH Yang, JH Choi, CS Hwang, SH Cho, S Jeon ACS Applied Materials & Interfaces 9 (11), 9271-9279, 2017 | 18 | 2017 |
| Influence of Fast Charging on Accuracy of Mobility in -InHfZnO Thin-Film Transistor T Kim, R Choi, S Jeon IEEE Electron Device Letters 38 (2), 203-206, 2016 | 18 | 2016 |
| High‐Performance and High‐Endurance HfO2‐Based Ferroelectric Field‐Effect Transistor Memory with a Spherical Recess Channel T Kim, J Hwang, G Kim, M Jung, S Jeon physica status solidi (RRL)–Rapid Research Letters 15 (5), 2100018, 2021 | 17 | 2021 |
| Photoresponse of an oxide semiconductor photosensor SE Ahn, S Park, T Kim, J Park, S Jeon Journal of Vacuum Science & Technology B 33 (3), 2015 | 17 | 2015 |
| Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf0. 5Zr0. 5O2 bilayer system T Kim, D Das, V Gaddam, C Shin, S Jeon Solid-State Electronics 174, 107914, 2020 | 16 | 2020 |
| Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors T Kim, Y Nam, JH Hur, SHK Park, S Jeon Nanotechnology 27 (32), 325203, 2016 | 16 | 2016 |
| High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory G Kim, S Lee, T Eom, T Kim, M Jung, H Shin, Y Jeong, M Kang, S Jeon Journal of Materials Chemistry C 10 (26), 9802-9812, 2022 | 15 | 2022 |
| Fast and slow transient charging of oxide semiconductor transistors T Kim, S Park, S Jeon Scientific Reports 7 (1), 11850, 2017 | 12 | 2017 |
| Pulse I–V characterization of a nano-crystalline oxide device with sub-gap density of states T Kim, JH Hur, S Jeon Nanotechnology 27 (21), 215203, 2016 | 12 | 2016 |
