| Flat SiC semiconductor substrate M Loboda, C Parfeniuk US Patent 9,018,639, 2015 | 418 | 2015 |
| Measured critical resolved shear stress and calculated temperature and stress fields during growth of CdZnTe C Parfeniuk, F Weinberg, IV Samarasekera, C Schvezov, L Li Journal of crystal growth 119 (3-4), 261-270, 1992 | 93 | 1992 |
| Copper sputtering target assembly and method of making same JK Kardokus, C tse Wu, CL Parfeniuk, JE Buehler US Patent 6,113,761, 2000 | 48 | 2000 |
| Physical vapor deposition target constructions C Parfeniuk, T Beier US Patent 6,797,362, 2004 | 32 | 2004 |
| Improvements in production of CdZnTe crystals grown by the Bridgman method HL Glass, AJ Socha, CL Parfeniuk, DW Bakken Journal of crystal growth 184, 1035-1038, 1998 | 30 | 1998 |
| Growth of lithium triborate crystals. II. Experimental results C Parfeniuk, IV Samarasekera, F Weinberg, J Edel, K Fjeldsted, B Lent Journal of crystal growth 158 (4), 523-533, 1996 | 24 | 1996 |
| Growth of lithium triborate crystals. I. Mathematical model C Parfeniuk, IV Samarasekera, F Weinberg Journal of crystal growth 158 (4), 514-522, 1996 | 22 | 1996 |
| Large area 4H SiC products for power electronic devices I Manning, J Zhang, B Thomas, E Sanchez, D Hansen, D Adams, ... Materials Science Forum 858, 11-14, 2016 | 18 | 2016 |
| Method for manufacturing SiC wafer fit for integration with power device manufacturing technology D Hansen, M Loboda, I Manning, K Moeggenborg, S Mueller, C Parfeniuk, ... US Patent 9,279,192, 2016 | 18 | 2016 |
| Methods of forming copper-containing sputtering targets JK Kardokus, C tse Wu, CL Parfeniuk, JE Buehler US Patent 6,849,139, 2005 | 14 | 2005 |
| Flat SiC semiconductor substrate M Loboda, C Parfeniuk US Patent 9,165,779, 2015 | 12 | 2015 |
| Methods of forming a plurality of spheres; and pluralities of spheres C Edie, DB Keno, CL Parfeniuk US Patent 6,579,479, 2003 | 12 | 2003 |
| Copper sputtering target assembly and method of making same JK Kardokus, C tse Wu, CL Parfeniuk, JE Buehler US Patent 6,331,234, 2001 | 12 | 2001 |
| Copper sputtering target assembly and method of making same JK Kardokus, C tse Wu, CL Parfeniuk, JE Buehler US Patent 6,645,427, 2003 | 9 | 2003 |
| Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets JK Kardokus, C tse Wu, CL Parfeniuk, JE Buehler US Patent 6,858,102, 2005 | 8 | 2005 |
| Methods of bonding physical vapor deposition target materials to backing plate materials C Parfeniuk, T Beier US Patent 6,780,794, 2004 | 7 | 2004 |
| Effect of surface damage on SiC wafer shape K Moeggenborg, T Kegg, C Parfeniuk, T Stoney, J Quast Materials Science Forum 821, 545-548, 2015 | 6 | 2015 |
| Method for manufacturing SiC wafer fit for integration with power device manufacturing technology D Hansen, M Loboda, I Manning, K Moeggenborg, S Mueller, C Parfeniuk, ... US Patent 10,002,760, 2018 | 5 | 2018 |
| First Solar Cell Results on Novel Direct-Cast Silicon Wafers GH P. Keller, D. Wood, C. Parfeniuk, G. Beaucarne, G. Cook, P. Mazumder EU PVSEC Proceedings, 603 - 607, 2014 | 1* | 2014 |
| Semiconductor and optical crystal growth F Weinberg, C Parfeniuk, IV Samarasekera Canadian metallurgical quarterly 34 (1), 1-14, 1995 | 1 | 1995 |
