Bandgap engineering of two-dimensional semiconductor materials A Chaves, JG Azadani, H Alsalman, DR Da Costa, R Frisenda, AJ Chaves, ... npj 2D Materials and Applications 4 (1), 29, 2020 | 744 | 2020 |
Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials R Frisenda, E Navarro-Moratalla, P Gant, DP De Lara, P Jarillo-Herrero, ... Chemical Society Reviews 47 (1), 53-68, 2018 | 631 | 2018 |
Atomically thin p–n junctions based on two-dimensional materials R Frisenda, AJ Molina-Mendoza, T Mueller, A Castellanos-Gomez, ... Chemical Society Reviews 47 (9), 3339-3358, 2018 | 289 | 2018 |
Signatures of quantum interference effects on charge transport through a single benzene ring CR Arroyo, S Tarkuc, R Frisenda, JS Seldenthuis, CHM Woerde, ... Angewandte Chemie International Edition 52 (11), 3152-3155, 2013 | 287 | 2013 |
Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides R Frisenda, M Drüppel, R Schmidt, SM de Vasconcellos, DP de Lara, ... npj 2D Materials and Applications 1, 2017 | 236 | 2017 |
Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2 Y Niu, S Gonzalez-Abad, R Frisenda, P Marauhn, M Drüppel, P Gant, ... Nanomaterials 8 (9), 725, 2018 | 215 | 2018 |
Thickness‐Dependent Refractive Index of 1L, 2L, and 3L MoS2, MoSe2, WS2, and WSe2 C Hsu, R Frisenda, R Schmidt, A Arora, SM De Vasconcellos, ... Advanced optical materials 7 (13), 1900239, 2019 | 209 | 2019 |
Large negative differential conductance in single-molecule break junctions ML Perrin, R Frisenda, M Koole, JS Seldenthuis, JAC Gil, H Valkenier, ... Nature nanotechnology 9 (10), 830-834, 2014 | 203 | 2014 |
Mechanically Controlled Quantum Interference in Individual π-stacked Dimers R Frisenda, V Jansen, FC Grozema, HSJ van der Zant, N Renaud Nature Chemistry 8, 1099-1104, 2016 | 201 | 2016 |
A strain tunable single-layer MoS2 photodetector P Gant, P Huang, DP de Lara, D Guo, R Frisenda, A Castellanos-Gomez Materials Today 27, 8-13, 2019 | 199 | 2019 |
The role of traps in the photocurrent generation mechanism in thin InSe photodetectors Q Zhao, W Wang, F Carrascoso-Plana, W Jie, T Wang, ... Materials horizons 7 (1), 252-262, 2020 | 198 | 2020 |
Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials R Frisenda, Y Niu, P Gant, AJ Molina-Mendoza, R Schmidt, R Bratschitsch, ... Journal of Physics D: Applied Physics 50 (7), 2017 | 179 | 2017 |
Single‐molecule spin switch based on voltage‐triggered distortion of the coordination sphere GD Harzmann, R Frisenda, HSJ van der Zant, M Mayor Angewandte Chemie International Edition 54 (45), 13425-13430, 2015 | 170 | 2015 |
Kondo effect in a neutral and stable all organic radical single molecule break junction R Frisenda, R Gaudenzi, C Franco, M Mas-Torrent, C Rovira, J Veciana, ... Nano letters 15 (5), 3109-3114, 2015 | 138 | 2015 |
Stretching-induced conductance increase in a spin-crossover molecule R Frisenda, GD Harzmann, JA Celis Gil, JM Thijssen, M Mayor, ... Nano letters 16 (8), 4733-4737, 2016 | 113 | 2016 |
Localized and dispersive electronic states at ordered FePc and CoPc chains on Au (110) MG Betti, P Gargiani, R Frisenda, R Biagi, A Cossaro, A Verdini, ... The Journal of Physical Chemistry C 114 (49), 21638-21644, 2010 | 109 | 2010 |
Naturally occurring van der Waals materials R Frisenda, Y Niu, P Gant, M Muñoz, A Castellanos-Gomez npj 2D Materials and Applications 4 (1), 38, 2020 | 99 | 2020 |
Revisiting the buckling metrology method to determine the Young's modulus of 2D materials N Iguiñiz, R Frisenda, R Bratschitsch, A Castellanos‐Gomez Advanced Materials 31 (10), 1807150, 2019 | 91 | 2019 |
Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2 F Carrascoso, H Li, R Frisenda, A Castellanos-Gomez Nano Research 14, 1698-1703, 2021 | 86 | 2021 |
InSe: a two-dimensional semiconductor with superior flexibility Q Zhao, R Frisenda, T Wang, A Castellanos-Gomez Nanoscale 11 (20), 9845-9850, 2019 | 86 | 2019 |