| Mechanism analysis of ultralow leakage and abnormal instability in InGaZnO thin-film transistor toward DRAM G Yan, H Yang, W Liu, N Zhou, Y Hu, Y Shi, J Gao, G Tian, Y Zhang, ... IEEE Transactions on Electron Devices 69 (5), 2417-2422, 2022 | 17 | 2022 |
| Sub-10-nm air channel field emission device with ultra-low operating voltage L Fan, J Bi, K Xi, B Zhao, X Yang, Y Xu IEEE Electron Device Letters 42 (9), 1390-1393, 2021 | 17 | 2021 |
| Simulation of total ionizing dose (TID) effects mitigation technique for 22 nm fully-depleted silicon-on-insulator (FDSOI) transistor G Yan, J Bi, G Xu, K Xi, B Li, L Fan, H Yin IEEE Access 8, 154898-154905, 2020 | 14 | 2020 |
| Investigation of radiation effects on FD-SOI Hall sensors by TCAD simulations L Fan, J Bi, K Xi, G Yan Sensors 20 (14), 3946, 2020 | 14 | 2020 |
| Cryogenic characterisation of 55 nm SONOS charge‐trapping memory in AC and DC modes LJ Fan, JS Bi, YN Xu, K Xi, Y Ma, M Liu, S Majumdar Electronics Letters 56 (4), 199-201, 2020 | 10 | 2020 |
| Nanoscale vacuum channel Hall sensors L Fan, J Bi, B Zhao, G Yan, Y Ma, F Zhao IEEE Sensors Journal 22 (24), 23806-23811, 2022 | 7 | 2022 |
| Improved Ferroelectric Properties in Hf0.5Zr0.5O2 Thin Films by Microwave Annealing B Zhao, Y Yan, J Bi, G Xu, Y Xu, X Yang, L Fan, M Liu Nanomaterials 12 (17), 3001, 2022 | 7 | 2022 |
| Impact of γ-ray irradiation on graphene-based hall sensors L Fan, J Bi, K Xi, X Yang, Y Xu, L Ji IEEE Sensors Journal 21 (14), 16100-16106, 2021 | 7 | 2021 |
| Performance optimization of FD-SOI hall sensors via 3D TCAD simulations L Fan, J Bi, K Xi, S Majumdar, B Li Sensors 20 (10), 2751, 2020 | 7 | 2020 |
| Mechanism of random telegraph noise in 22-nm FDSOI-based MOSFET at cryogenic temperatures Y Ma, J Bi, H Wang, L Fan, B Zhao, L Shen, M Liu Nanomaterials 12 (23), 4344, 2022 | 6 | 2022 |
| Nanoscale air channel devices-inheritance and breakthrough of vacuum tube B Chen, L Fan, J Bi, Z Li, Z Xu, S Majumdar Nano Materials Science, 2024 | 4 | 2024 |
| Radiation immune-planar two-terminal nanoscale air channel devices toward space applications L Fan, B Zhao, B Chen, Y Ma, J Bi, F Zhao ACS Applied Nano Materials 6 (23), 22080-22087, 2023 | 4 | 2023 |
| Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions X Yang, Y Xu, J Bi, K Xi, L Fan, L Ji, G Xu Science China Information Sciences 65 (6), 169403, 2022 | 4 | 2022 |
| The influences of radiation effects on DC/RF performances of L g= 22 nm gate-all-around nanosheet field-effect transistor Y Ma, J Bi, S Majumdar, S Mehmood, L Ji, Y Sun, C Zhang, L Fan, B Zhao, ... Semiconductor Science and Technology 37 (3), 035010, 2022 | 4 | 2022 |
| The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer Y Xu, J Bi, Y Li, K Xi, L Fan, M Liu, M Sandip, L Luo Microelectronics Reliability 100, 113355, 2019 | 4 | 2019 |
| Cryogenic characterization of nano-scale bulk FinFETs LJ Fan, JS Bi, X Fan, GB Xu, YN Xu, K Xi, ZG Zhang 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit …, 2020 | 3 | 2020 |
| Localized Backside Etching Structure of SOI Substrates on Total Ionizing Dose Effect Hardening for RF Applications B Zhao, J Bi, Y Ma, J Zhang, Y Wang, L Fan, T Han, V Stempitsky IEEE Transactions on Electron Devices 69 (5), 2256-2261, 2022 | 1 | 2022 |
| Total Ionizing Dose Effects on DC/RF Performances of Emerging Vertical Back-Gate CMOS Platform Y Ma, J Bi, B Zhao, L Fan, J Wang, G Yan, Z Xu, B Chen, H Deng, Z Li, ... IEEE Transactions on Device and Materials Reliability, 2024 | | 2024 |
| The impacts of localized backside etching on proton radiation response in SOI passive devices B Zhao, J Bi, Y Ma, J Zhang, Y Wang, L Fan, T Han, Y Xuan, V Stempitsky, ... Japanese Journal of Applied Physics 62 (2), 020905, 2023 | | 2023 |
