| Heterogeneous integration toward a monolithic 3-D chip enabled by III–V and Ge materials SH Kim, SK Kim, JP Shim, DM Geum, G Ju, HS Kim, HJ Lim, HR Lim, ... IEEE Journal of the Electron Devices Society 6, 579-587, 2018 | 36 | 2018 |
| 3D stackable synaptic transistor for 3D integrated artificial neural networks SK Kim, YJ Jeong, P Bidenko, HR Lim, YR Jeon, H Kim, YJ Lee, ... ACS applied materials & interfaces 12 (6), 7372-7380, 2020 | 25 | 2020 |
| Photo-responsible synapse using Ge synaptic transistors and GaAs photodetectors SK Kim, DM Geum, HR Lim, JH Han, H Kim, Y Jeong, SH Kim IEEE Electron Device Letters 41 (4), 605-608, 2020 | 15 | 2020 |
| Impact of bottom-gate biasing on implant-free junctionless Ge-on-insulator n-MOSFETs HR Lim, SK Kim, JH Han, H Kim, DM Geum, YJ Lee, BK Ju, HJ Kim, S Kim IEEE Electron Device Letters 40 (9), 1362-1365, 2019 | 10 | 2019 |
| Low-loss and high-confinement photonic platform based on germanium-on-insulator at mid-infrared range for optical sensing J Lim, J Shim, I Kim, SK Kim, H Lim, SY Ahn, J Park, DM Geum, SH Kim Journal of Lightwave Technology 41 (9), 2824-2833, 2023 | 9 | 2023 |
| Improved characteristics of MOS interface between In0. 53Ga0. 47As and insulator by H2 annealing with Pt gate electrode SK Kim, DM Geum, HR Lim, H Kim, JH Han, DK Hwang, JD Song, H Kim, ... Applied Physics Letters 115 (14), 2019 | 8 | 2019 |
| Low-temperature material stacking of ultrathin body Ge (110)-on-insulator structure via wafer bonding and epitaxial liftoff from III–V templates JP Shim, HS Kim, G Ju, HR Lim, SK Kim, JH Han, HJ Kim, SH Kim IEEE Transactions on Electron Devices 65 (3), 1253-1257, 2018 | 8 | 2018 |
| Heterogeneous 3D sequential CFET with Ge (110) nanosheet p-FET on Si (100) bulk n-FET by direct wafer bonding SK Kim, HR Lim, J Jeong, SW Lee, JP Kim, J Jeong, BH Kim, SY Ahn, ... 2022 International Electron Devices Meeting (IEDM), 20.1. 1-20.1. 4, 2022 | 5 | 2022 |
| Heterogeneous integration toward monolithic 3D chip SH Kim, SK Kim, JP Shim, D Geum, G Ju, HS Kim, HJ Lim, HR Lim, ... 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2017 | 2 | 2017 |
| Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs SK Kim, HR Lim, J Jeong, SW Lee, HJ Jeong, J Park, JP Kim, J Jeong, ... IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| Supporting document: Low-loss and high-confinement photonic platform based on germanium-on-insulator at mid-infrared range for optical sensing J Lim, J Shim, I Kim, SK Kim, H Lim, S Ahn, J Park, DM Geum, SH Kim figshare, 2022 | 1 | 2022 |
| Ge (110) GAA Nanosheet/Si (100) Tri-gate Nanosheet Monolithic CFETs Featuring Record-High Hole Mobility SK Kim, HR Lim, J Jeong, Y Park, J Park, S Park, J Park, D Ha, BJ Cho, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | | 2024 |
| Role of Inter-Layer Dielectric on the Electrical and Heat Dissipation Characteristics in the Heterogeneous 3D Sequential CFETs with Ge p-FETs on Si n-FETs SK Kim, HR Lim, J Shim, W Baek, S Kim, Y Park, J Jeong, J Lim, JP Kim, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
| Biochemical spectroscopy based on germanium-on-insulator platform for mid-infrared optical sensor J Lim, J Shim, I Kim, SK Kim, H Lim, SY Ahn, J Park, DM Geum, SH Kim 2022 International Electron Devices Meeting (IEDM), 24.1. 1-24.1. 4, 2022 | | 2022 |
| Low-loss Germanium-on-insulator passive waveguides for mid-infrared photonics platform J Lim, J Shim, SK Kim, H Lim, SW Lee, DM Geum, SH Kim Optical Sensors, SM4E. 5, 2022 | | 2022 |
| Hybrid 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding SK Kim, HR Lim, J Jeong, SW Lee, JP Kim, J Jeong, BH Kim, DM Geum, ... 68th IEEE International Electron Devices Meeting, IEDM 2022, 2022 | | 2022 |
| Electrical characterization of wafer-bonded interfaces of p+ InGaAs/n+ InGaAs and p+ GaAs/n+ InGaAs DM Geum, S Kim, H Lim, J Park, J Jeong, JH Han, WJ Choi, H Kim, S Kim Global Photovoltaic Conference 2021, 2021 | | 2021 |
| Electrical Analysis for Wafer-Bonded Interfaces of p+GaAs/n+InGaAs and p+InGaAs/n+InGaAs DM Geum, SK Kim, HR Lim, J Park, J Jeong, JH Han, WJ Choi, HJ Kim, ... IEEE Electron Device Letters 42 (6), 800-803, 2021 | | 2021 |
Sanghyeon KimKAIST, KIST, imec, The University of Tokyo在 kaist.ac.kr 的电子邮件经过验证
