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Byeong Guk Ko
Byeong Guk Ko
在 inu.ac.kr 的电子邮件经过验证
标题
引用次数
引用次数
年份
Area-selective atomic layer deposition using Si precursors as inhibitors
R Khan, B Shong, BG Ko, JK Lee, H Lee, JY Park, IK Oh, SS Raya, ...
Chemistry of Materials 30 (21), 7603-7610, 2018
1112018
Effects of Al Precursors on Deposition Selectivity of Atomic Layer Deposition of Al2O3 Using Ethanethiol Inhibitor
HG Kim, M Kim, B Gu, MR Khan, BG Ko, S Yasmeen, CS Kim, SH Kwon, ...
Chemistry of Materials 32 (20), 8921-8929, 2020
572020
Growth modulation of atomic layer deposition of HfO 2 by combinations of H 2 O and O 3 reactants
BG Ko, CT Nguyen, B Gu, MR Khan, K Park, H Oh, J Park, B Shong
Dalton Transactions 50 (48), 17935-17944, 2021
92021
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