| Review and outlook on GaN and SiC power devices: industrial state-of-the-art, applications, and perspectives M Buffolo, D Favero, A Marcuzzi, C De Santi, G Meneghesso, E Zanoni, ... IEEE Transactions on Electron Devices, 2024 | 73 | 2024 |
| Review on the degradation of GaN-based lateral power transistors C De Santi, M Buffolo, I Rossetto, T Bordignon, E Brusaterra, A Caria, ... e-Prime-Advances in Electrical Engineering, Electronics and Energy 1, 100018, 2021 | 9 | 2021 |
| Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD N Zagni, M Fregolent, A Del Fiol, D Favero, F Bergamin, G Verzellesi, ... Journal of Semiconductors 45 (3), 032501, 2024 | 5 | 2024 |
| High-temperature PBTI in trench-gate vertical GaN power MOSFETs: Role of border and semiconductor traps D Favero, A Cavaliere, C De Santi, M Borga, W Gonçalez Filho, K Geens, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023 | 5 | 2023 |
| Influence of drain and gate potential on gate failure in semi-vertical GaN-on-Si trench MOSFETs D Favero, C De Santi, K Mukherjee, K Geens, M Borga, B Bakeroot, S You, ... 2022 IEEE International Reliability Physics Symposium (IRPS), P20-1-P20-4, 2022 | 5 | 2022 |
| Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stress D Favero, C De Santi, A Stockman, A Nardo, P Vanmeerbeek, M Tack, ... Microelectronics Reliability 150, 115129, 2023 | 4 | 2023 |
| A Review of SiC Commercial Devices for Automotive: Properties and Challenges A Marcuzzi, D Favero, C De Santi, G Meneghesso, E Zanoni, ... 2023 AEIT International Conference on Electrical and Electronic Technologies …, 2023 | 4 | 2023 |
| and Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout D Favero, C De Santi, A Stockman, A Nardo, P Vanmeerbeek, M Tack, ... 2024 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2024 | 1 | 2024 |
| Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors D Favero, C De Santi, K Mukherjee, M Borga, K Geens, U Chatterjee, ... Microelectronics Reliability 138, 114620, 2022 | 1 | 2022 |
| Vertical GaN devices: Reliability challenges and lessons learned from Si and SiC M Meneghini, M Fregolent, N Zagni, Y Hamadoui, A Marcuzzi, D Favero, ... IEDM 2023-70th Annual IEEE International Electron Devices Meeting, 2024 | | 2024 |
| Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate D Favero, C De Santi, A Nardo, A Dixit, P Vanmeerbeek, A Stockman, ... Applied Physics Express 17 (10), 104001, 2024 | | 2024 |
| Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs N Zagni, M Fregolent, G Verzellesi, F Bergamin, D Favero, C De Santi, ... IEEE Transactions on Power Electronics, 2024 | | 2024 |
| Dynamic phenomena in 650V p-GaN technology A Stockman, A Nardo, P Vanmeerbeek, M Tack, D Favero, S Longato, ... Proceedings of the GaN Marathon 2024, 2024 | | 2024 |
| Vth stability and gate leakage current trade-off in p-GaN gate power HEMTs during on-and off-state stress D Favero, C DE SANTI, A Stockman, A Nardo, P Vanmeerbeek, M Tack, ... Proceedings of the GaN Marathon 2024, 2024 | | 2024 |
| GaN-on-Si Power HEMTs for Automotive: Current Status and Perspectives D Favero, A Marcuzzi, C De Santi, G Meneghesso, E Zanoni, ... 2023 AEIT International Conference on Electrical and Electronic Technologies …, 2023 | | 2023 |
| GaN Vertical Devices: challenges for high performance and stability M Meneghini, M Fregolent, N Zagni, C DE SANTI, EB Treidel, ... Proceedings of ICNS-14 conference, 2023 | | 2023 |
| Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD N Zagni, M Fregolent, A Del Fiol, D Favero, F Bergamin, G Verzellesi, ... Journal of Semiconductors 45, -1--8, 2023 | | 2023 |
| Analisi di pigmenti fotosintetici misurati in diverse specie di muschi esposti a diverse condizioni di luce D FAVERO | | |
| Experimental characterization and modelling of innovative semi-vertical gallium nitride (GaN) devices on silicon (Si) substrate D FAVERO | | |
Matteo MeneghiniFull Professor at the University of Padova在 dei.unipd.it 的电子邮件经过验证
