Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime SKM B Jena, KP Pradhan, S Dash, GP Mishra, PK Sahu Advances in Natural Sciences: Nanoscience and Nanotechnology 6 (3), 035010, 2015 | 51 | 2015 |
Investigation on cylindrical gate all around (GAA) to nanowire MOSFET for circuit application B Jena, KP Pradhan, PK Sahu, S Dash, GP Mishra, SK Mohapatra Facta universitatis-series: Electronics and Energetics 28 (4), 637-643, 2015 | 40 | 2015 |
Improved switching speed of a CMOS inverter using work-function modulation engineering B Jena, S Dash, GP Mishra IEEE transactions on electron devices 65 (6), 2422-2429, 2018 | 35 | 2018 |
Inner-gate-engineered GAA MOSFET to enhance the electrostatic integrity B Jena, S Dash, SR Routray, GP Mishra Nano 14 (10), 1950128, 2019 | 31 | 2019 |
A new analytical drain current model of cylindrical gate silicon tunnel FET with source δ-doping S Dash, B Jena, GP Mishra Superlattices and Microstructures 97, 231-241, 2016 | 29 | 2016 |
A comprehensive investigation of vertically stacked silicon nanosheet field effect transistors: an analog/rf perspective S Tayal, J Ajayan, LMIL Joseph, J Tarunkumar, D Nirmal, B Jena, A Nandi Silicon 14 (7), 3543-3550, 2022 | 27 | 2022 |
Silicon nanowire GAA-MOSFET: A workhorse in nanotechnology for future semiconductor devices K Bhol, B Jena, U Nanda Silicon 14 (7), 3163-3171, 2022 | 25 | 2022 |
Incorporating bottom-up approach into device/circuit co-design for SRAM-based cache memory applications S Tayal, B Smaani, SB Rahi, AK Upadhyay, S Bhattacharya, J Ajayan, ... IEEE Transactions on Electron Devices 69 (11), 6127-6132, 2022 | 23 | 2022 |
Conical surrounding gate MOSFET: a possibility in gate-all-around family SDGPM B Jena, B S Ramkrishna Advances in Natural Sciences: Nanoscience and Nanotechnology 7 (1), 015009 …, 2016 | 23 | 2016 |
Investigation of nanosheet-FET based logic gates at sub-7 nm technology node for digital IC applications S Tayal, S Valasa, S Bhattacharya, J Ajayan, SM Ahmed, B Jena, ... Silicon 14 (18), 12261-12267, 2022 | 22 | 2022 |
Electrostatic performance improvement of dual material cylindrical gate MOSFET using work-function modulation technique B Jena, S Dash, GP Mishra Superlattices and microstructures 97, 212-220, 2016 | 20 | 2016 |
Impact of source pocket doping on RF and linearity performance of a cylindrical gate tunnel FET S Dash, AS Lenka, B Jena, GP Mishra International Journal of Numerical Modelling: Electronic Networks, Devices …, 2018 | 16 | 2018 |
Performance analysis of ferroelectric gaa mosfet with metal grain work function variability B Jena, K Bhol, U Nanda, S Tayal, SR Routray Silicon 14 (6), 3005-3012, 2022 | 15 | 2022 |
Jestr r P Keerthana, PP Babu, TA Babu, B Jena Journal of Engineering Science and Technology Review 13 (2), 39-43, 2020 | 15 | 2020 |
Ambipolarity suppression of a double gate tunnel FET using high-k drain dielectric pocket S Panda, B Jena, S Dash ECS Journal of Solid State Science and Technology 11 (1), 013014, 2022 | 12 | 2022 |
Investigation of electrostatic performance for a conical surrounding gate MOSFET with linearly modulated work-function BSRBJSDGP Mishra Superlattices and Microstructures, 2016 | 11 | 2016 |
Journey of Mosfet from planar to gate all around: A review K Bhol, B Jena, U Nanda Recent Patents on Nanotechnology 16 (4), 326-332, 2022 | 9 | 2022 |
Study on analog/RF and linearity performance of staggered heterojunction gate stack tunnel FET SM Biswal, SK Das, S Misra, U Nanda, B Jena ECS Journal of Solid State Science and Technology 10 (7), 073001, 2021 | 9 | 2021 |
Impact of metal grain work function variability on ferroelectric insulation based GAA MOSFET B Jena, S Dash, GP Mishra Micro & Nano Letters 13 (10), 1378-1381, 2018 | 9 | 2018 |
Conventional vs. junctionless gate-stack DG-MOSFET based CMOS inverter S Tayal, P Samrat, V Keerthi, B Jena, K Rajendra International Journal of Nano Dimension 12 (2), 98-103, 2021 | 7 | 2021 |