| Current status of AlInN layers lattice-matched to GaN for photonics and electronics R Butté, JF Carlin, E Feltin, M Gonschorek, S Nicolay, G Christmann, ... Journal of Physics D: Applied Physics 40 (20), 6328, 2007 | 409 | 2007 |
| Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials JF Carlin, C Zellweger, J Dorsaz, S Nicolay, G Christmann, E Feltin, ... physica status solidi (b) 242 (11), 2326-2344, 2005 | 195 | 2005 |
| Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕ GaN Bragg mirrors JF Carlin, J Dorsaz, E Feltin, R Butté, N Grandjean, M Ilegems, M Laügt Applied Physics Letters 86 (3), 2005 | 134 | 2005 |
| Recombination coefficients of GaN-based laser diodes WG Scheibenzuber, UT Schwarz, L Sulmoni, J Dorsaz, JF Carlin, ... Journal of Applied Physics 109 (9), 2011 | 121 | 2011 |
| Progress in AlInN–GaN Bragg reflectors: Application to a microcavity light emitting diode J Dorsaz, JF Carlin, S Gradecak, M Ilegems Journal of applied physics 97 (8), 2005 | 116 | 2005 |
| Recent progress in the growth of highly reflective nitride-based distributed Bragg reflectors and their use in microcavities R Butté, E Feltin, J Dorsaz, G Christmann, JF Carlin, N Grandjean, ... Japanese journal of applied physics 44 (10R), 7207, 2005 | 113 | 2005 |
| Crack-free highly reflective AlInN∕ AlGaN Bragg mirrors for UV applications E Feltin, JF Carlin, J Dorsaz, G Christmann, R Butté, M Laügt, M Ilegems, ... Applied Physics Letters 88 (5), 2006 | 106 | 2006 |
| Broadband blue superluminescent light-emitting diodes based on GaN E Feltin, A Castiglia, G Cosendey, L Sulmoni, JF Carlin, N Grandjean, ... Applied Physics Letters 95 (8), 2009 | 99 | 2009 |
| Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure E Feltin, G Christmann, J Dorsaz, A Castiglia, JF Carlin, R Butté, ... Electronics Letters 43 (17), 924-926, 2007 | 82 | 2007 |
| Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers E Feltin, R Butté, JF Carlin, J Dorsaz, N Grandjean, M Ilegems Electronics Letters 41 (2), 94-95, 2005 | 65 | 2005 |
| Efficient current injection scheme for nitride vertical cavity surface emitting lasers A Castiglia, D Simeonov, HJ Buehlmann, JF Carlin, E Feltin, J Dorsaz, ... Applied physics letters 90 (3), 2007 | 48 | 2007 |
| Selective oxidation of AlInN layers for current confinement in III–nitride devices J Dorsaz, HJ Bühlmann, JF Carlin, N Grandjean, M Ilegems Applied Physics Letters 87 (7), 2005 | 43 | 2005 |
| Superluminescent light emitting diodes: the best out of two worlds M Rossetti, J Napierala, N Matuschek, U Achatz, M Duelk, C Vélez, ... Moems and Miniaturized Systems Xi 8252, 54-66, 2012 | 41 | 2012 |
| High power blue-violet superluminescent light emitting diodes with InGaN quantum wells M Rossetti, J Dorsaz, R Rezzonico, M Duelk, C Velez, E Feltin, A Castiglia, ... Applied physics express 3 (6), 061002, 2010 | 41 | 2010 |
| InGaN/GaN resonant‐cavity LED including an AlInN/GaN Bragg mirror J Dorsaz, JF Carlin, CM Zellweger, S Gradecak, M Ilegems physica status solidi (a) 201 (12), 2675-2678, 2004 | 41 | 2004 |
| AlGaN-free blue III–nitride laser diodes grown on c-plane GaN substrates J Dorsaz, A Castiglia, G Cosendey, E Feltin, M Rossetti, M Duelk, C Velez, ... Applied physics express 3 (9), 092102, 2010 | 31 | 2010 |
| Blue laser diodes including lattice-matched Al0. 83In0. 17N bottom cladding layer A Castiglia, E Feltin, J Dorsaz, G Cosendey, JF Carlin, R Butté, ... Electronics Letters 44 (8), 521-522, 2008 | 26 | 2008 |
| Static and dynamic properties of multi-section InGaN-based laser diodes L Sulmoni, JM Lamy, J Dorsaz, A Castiglia, JF Carlin, WG Scheibenzuber, ... Journal of Applied Physics 112 (10), 2012 | 23 | 2012 |
| Self-pulsation at zero absorber bias in GaN-based multisection laser diodes WG Scheibenzuber, C Hornuss, UT Schwarz, L Sulmoni, J Dorsaz, ... Applied physics express 4 (6), 062702, 2011 | 22 | 2011 |
| Low temperature p-type doping of (Al) GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes M Malinverni, JM Lamy, D Martin, E Feltin, J Dorsaz, A Castiglia, ... Applied Physics Letters 105 (24), 2014 | 19 | 2014 |
