| Sol-gel processed p-type CuO phototransistor for a near-infrared sensor S Lee, WY Lee, B Jang, T Kim, JH Bae, K Cho, S Kim, J Jang IEEE Electron Device Letters 39 (1), 47-50, 2017 | 56 | 2017 |
| High‐Detectivity Flexible Near‐Infrared Photodetector Based on Chalcogenide Ag2Se Nanoparticles WY Lee, S Ha, H Lee, JH Bae, B Jang, HJ Kwon, Y Yun, S Lee, J Jang Advanced Optical Materials 7 (22), 1900812, 2019 | 47 | 2019 |
| Impact of Device Area and Film Thickness on Performance of Sol-Gel Processed ZrO2 RRAM S Lee, T Kim, B Jang, W Lee, KC Song, HS Kim, GY Do, SB Hwang, ... IEEE Electron Device Letters 39 (5), 668-671, 2018 | 44 | 2018 |
| High Performance Ultrathin SnO2 Thin-Film Transistors by Sol–Gel Method B Jang, T Kim, S Lee, WY Lee, H Kang, CS Cho, J Jang IEEE Electron Device Letters 39 (8), 1179-1182, 2018 | 37 | 2018 |
| Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors C Lee, WY Lee, H Lee, S Ha, JH Bae, IM Kang, H Kang, K Kim, J Jang Electronics 9 (2), 254, 2020 | 32 | 2020 |
| Effect of Annealing Environment on the Performance of Sol–Gel-Processed ZrO2 RRAM S Ha, H Lee, WY Lee, B Jang, HJ Kwon, K Kim, J Jang Electronics 8 (9), 947, 2019 | 28 | 2019 |
| Improved Negative Bias Stress Stability of Sol-Gel-Processed Mg-Doped In2O3 Thin Film Transistors T Kim, B Jang, S Lee, WY Lee, J Jang IEEE Electron Device Letters 39 (12), 1872-1875, 2018 | 26 | 2018 |
| Extremely bias stress stable enhancement mode sol–gel-processed SnO2 thin-film transistors with Y2O3 passivation layers C Lee, WY Lee, HJ Kim, JH Bae, IM Kang, D Lim, K Kim, J Jang Applied Surface Science 559, 149971, 2021 | 24 | 2021 |
| Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route H Lee, S Ha, JH Bae, IM Kang, K Kim, WY Lee, J Jang Electronics 8 (9), 955, 2019 | 18 | 2019 |
| Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO2 Thin-Film Transistor WY Lee, H Lee, S Ha, C Lee, JH Bae, IM Kang, K Kim, J Jang Electronics 9 (3), 523, 2020 | 17 | 2020 |
| Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory K Kim, W Hong, C Lee, WY Lee, HJ Kim, HJ Kwon, H Kang, J Jang Materials Research Express 8 (11), 116301, 2021 | 16 | 2021 |
| Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field DW Kim, HJ Kim, WY Lee, K Kim, SH Lee, JH Bae, IM Kang, K Kim, J Jang Materials 15 (5), 1943, 2022 | 15 | 2022 |
| Environmentally and Electrically Stable Sol–Gel-Deposited SnO2 Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That … WY Lee, DW Kim, HJ Kim, K Kim, SH Lee, JH Bae, IM Kang, K Kim, J Jang ACS applied materials & interfaces 14 (8), 10558-10565, 2022 | 14 | 2022 |
| Improved negative bias stability of sol–gel processed Ti-doped SnO2 thin-film transistors WY Lee, H Lee, S Ha, C Lee, JH Bae, IM Kang, J Jang Semiconductor Science and Technology 35 (11), 115023, 2020 | 13 | 2020 |
| Enhanced switching ratio of sol–gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures K Kim, C Lee, WY Lee, HJ Kim, SH Lee, JH Bae, IM Kang, J Jang Semiconductor Science and Technology 37 (1), 015007, 2021 | 12 | 2021 |
| Schottky Nature of Au/SnO2 Ultrathin Film Diode Fabricated Using Sol–Gel Process B Jang, T Kim, S Lee, WY Lee, J Jang IEEE Electron Device Letters 39 (11), 1732-1735, 2018 | 12 | 2018 |
| Flexible Sol-Gel—Processed Y2O3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process HJ Kim, DW Kim, WY Lee, K Kim, SH Lee, JH Bae, IM Kang, K Kim, J Jang Materials 15 (5), 1899, 2022 | 11 | 2022 |
| Enhancement Mode Flexible SnO2 Thin Film Transistors Via a UV/Ozone-Assisted Sol-Gel Approach B Jang, H Kang, WY Lee, JH Bae, IM Kang, K Kim, HJ Kwon, J Jang IEEE Access 8, 123013-123018, 2020 | 11 | 2020 |
| Densification Control as a Method of Improving the Ambient Stability of Sol–Gel-Processed SnO2 Thin-Film Transistors WY Lee, SH Ha, H Lee, JH Bae, B Jang, HJ Kwon, J Jang IEEE Electron Device Letters 40 (6), 905-908, 2019 | 9 | 2019 |
| Improved Environment Stability of Y2O3 RRAM Devices with Au Passivated Ag Top Electrodes HI Kim, T Lee, WY Lee, K Kim, JH Bae, IM Kang, SH Lee, K Kim, J Jang Materials 15 (19), 6859, 2022 | 8 | 2022 |
Jaewon JangAssociate Prof., School of Electonics Engineering, Kyungpook National University在 knu.ac.kr 的电子邮件经过验证
