| Nitrogen-doped NDR behavior of double gate graphene field effect transistor DL Tiwari, K Sivasankaran Superlattices and Microstructures 136, 106308, 2019 | 15 | 2019 |
| Impact of substrate on performance of band gap engineered graphene field effect transistor DL Tiwari, K Sivasankaran Superlattices and Microstructures 113, 244-254, 2018 | 12 | 2018 |
| Impact of carrier concentration and bandgap on the performance of double gate GNR-FET DL Tiwari, K Sivasankaran Superlattices and Microstructures 130, 38-49, 2019 | 10 | 2019 |
| NDR Behavior of a Phosphorous-Doped Double-Gate MoS2 Armchair Nanoribbon Field Effect Transistor DL Tiwari, K Sivasankaran Journal of Electronic Materials 49, 551-558, 2020 | 8 | 2020 |
| Effect of Hexagonal Boron Nitride on Electron–Hole Puddles of Graphene Nanomesh Field Effect Transistor P Palla, HR Ansari, DL Tiwari Journal of Nanoelectronics and Optoelectronics 13 (5), 687-692, 2018 | 2 | 2018 |
| Improved performance of h-BN encapsulated double gate graphene nanomesh field effect transistor for short channel length DL Tiwari, K Sivasankaran International Journal of Nanoscience 17 (01n02), 1760016, 2018 | 2 | 2018 |
| Band gap engineered nano perforated graphene microstructures for field effect transistor P Palla, DL Tiwari, HR Ansari, TS Babu, AS Ethiraj, JP Raina AIP Conference Proceedings 1728 (1), 2016 | 2 | 2016 |
K SivasankaranVIT University在 vit.ac.in 的电子邮件经过验证
K SivasankaranVIT University在 vit.ac.in 的电子邮件经过验证