| Feedforward neural network trained by BFGS algorithm for modeling plasma etching of silicon carbide JH Xia, AS Kumta IEEE transactions on plasma science 38 (2), 142-148, 2010 | 46 | 2010 |
| Design of field-plate terminated 4H-SiC Schottky diodes using high-k dielectrics A Kumta, CC Tin, J Ahn Microelectronics Reliability 46 (8), 1295-1302, 2006 | 23 | 2006 |
| Field-Plate-Terminated 4H-SiC Schottky Diodes Using Al-Based High- Dielectrics AS Kumta, X Jinghua Electron Devices, IEEE Transactions on 56 (12), 2925-2934, 2009 | 21 | 2009 |
| RF performance of 28nm PolySiON and HKMG CMOS devices KWJ Chew, A Agshikar, M Wiatr, JS Wong, WH Chow, Z Liu, TH Lee, J Shi, ... 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 43-46, 2015 | 19 | 2015 |
| Passivation of 4H–SiC Schottky barrier diodes using aluminum based dielectrics A Kumta, JH Xia Solid-state electronics 53 (2), 204-210, 2009 | 17 | 2009 |
| Breakdown phenomena of Al-based high-k dielectric/SiO2 stack on 4H-SiC A Kumta, R Rusli, JH Xia Applied Physics Letters 94 (23), 2009 | 12 | 2009 |
| Diffusion and electroluminescence studies of low temperature diffusion of boron in 3C-SiC IG Atabaev, CC Tin, BG Atabaev, TM Saliev, EN Bakhranov, ... Materials Science Forum 600, 457-460, 2009 | 10 | 2009 |
| Modeling of silicon carbide ECR etching by feed-forward neural network and its physical interpretations JH Xia, A Kumta IEEE Transactions on Plasma Science 38 (5), 1091-1096, 2010 | 8 | 2010 |
| Field-Plate Terminated Pt/n- 4H-SiC SBD Using Thermal SiO2 and Sputter Deposited AlN Dielectric Stack A Kumta, E Rusli, JH Xia Materials Science Forum 600, 987-990, 2009 | 3 | 2009 |
| Design and Analysis of a Dual-Step Field-Plate Terminated 4H-SiC Schottky Diode Using SiO2/High-K Dielectric Stack A Kumta, E Rusli, CC Tin Materials science forum 527, 1171-1174, 2006 | 1 | 2006 |
| Unterminated 4H-SiC Schottky barrier diodes with novel HfNxBy electrodes A Kumta, CC Tin, L Valeri, SF Yoon, J Ahn Microelectronic engineering 83 (1), 37-40, 2006 | | 2006 |
