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Kagiso Loeto
Kagiso Loeto
Postdoctoral Research Associate, Paul-Drude-Institut
在 pdi-berlin.de 的电子邮件经过验证
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引用次数
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Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence
G Kusch, EJ Comish, K Loeto, S Hammersley, MJ Kappers, P Dawson, ...
Nanoscale 14 (2), 402-409, 2022
152022
Point Defects in InGaN/GaN Core–Shell Nanorods: Role of the Regrowth Interface
K Loeto, G Kusch, PM Coulon, SM Fairclough, E Le Boulbar, I Girgel, ...
Nano Express 2 (1), 014005, 2021
62021
Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence
K Loeto, G Kusch, S Ghosh, M Frentrup, A Hinz, R Oliver
physica status solidi (a) 220 (16), 2200830, 2023
12023
Uncovering the carrier dynamics of AlInGaN semiconductors using time-resolved cathodoluminescence
K Loeto
Materials Science and Technology 38 (12), 780-793, 2022
12022
Influence of Xe+ and Ga+ milling species on the cathodoluminescence of wurtzite and zincblende GaN
K Loeto, SM Fairclough, I Griffiths, G Kusch, S Ghosh, MJ Kappers, ...
Journal of Applied Physics 136 (4), 2024
2024
Steady State and Time-Resolved Cathodoluminescence Analysis of III-Nitride Semiconductors
K Loeto
2023
Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence
K Loeto, G Kusch, S Ghosh, MJ Kappers, RA Oliver
Micron 172, 103489, 2023
2023
Complications in silane-assisted GaN nanowire growth
N Jiang, S Ghosh, M Frentrup, SM Fairclough, K Loeto, G Kusch, ...
Nanoscale Advances 5 (9), 2610-2620, 2023
2023
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