| Analytical Model for the Threshold Voltage of -(Al)GaN High-Electron-Mobility Transistors B Bakeroot, A Stockman, N Posthuma, S Stoffels, S Decoutere IEEE Transactions on Electron Devices 65 (1), 79-86, 2017 | 105 | 2017 |
| Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors A Stockman, F Masin, M Meneghini, E Zanoni, G Meneghesso, ... IEEE Transactions on Electron Devices 65 (12), 5365-5372, 2018 | 98 | 2018 |
| On the origin of the leakage current in p-gate AlGaN/GaN HEMTs A Stockman, E Canato, A Tajalli, M Meneghini, G Meneghesso, E Zanoni, ... 2018 IEEE international reliability physics symposium (IRPS), 4B. 5-1-4B. 5-4, 2018 | 62 | 2018 |
| Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs A Stockman, E Canato, M Meneghini, G Meneghesso, P Moens, ... 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 57 | 2019 |
| Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress F Masin, M Meneghini, E Canato, C De Santi, A Stockman, E Zanoni, ... Applied Physics Letters 115 (5), 2019 | 37 | 2019 |
| Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs A Stockman, E Canato, M Meneghini, G Meneghesso, P Moens, ... IEEE Transactions on Device and Materials Reliability 21 (2), 169-175, 2021 | 35 | 2021 |
| Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors A Tajalli, E Canato, A Nardo, M Meneghini, A Stockman, P Moens, ... Microelectronics Reliability 88, 572-576, 2018 | 29 | 2018 |
| -Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate E Canato, F Masin, M Borga, E Zanoni, M Meneghini, G Meneghesso, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 27 | 2019 |
| The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors A Stockman, A Tajalli, M Meneghini, MJ Uren, S Mouhoubi, S Gerardin, ... IEEE Transactions on Electron Devices 66 (1), 372-377, 2018 | 22 | 2018 |
| Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation M Meneghini, A Tajalli, P Moens, A Banerjee, A Stockman, M Tack, ... 2017 IEEE International Electron Devices Meeting (IEDM), 33.5. 1-33.5. 4, 2017 | 21 | 2017 |
| Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron A Stockman, M Uren, A Tajalli, M Meneghini, B Bakeroot, P Moens 2017 47th European Solid-State Device Research Conference (ESSDERC), 130-133, 2017 | 21 | 2017 |
| OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution E Canato, M Meneghini, C De Santi, F Masin, A Stockman, P Moens, ... Microelectronics Reliability 114, 113841, 2020 | 19 | 2020 |
| ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping E Canato, M Meneghini, A Nardo, F Masin, A Barbato, M Barbato, ... Microelectronics Reliability 100, 113334, 2019 | 16 | 2019 |
| A physical-statistical approach to AlGaN/GaN HEMT reliability P Moens, A Stockman 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 16 | 2019 |
| ON-state gate stress induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs A Stockman, P Moens 2020 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2020 | 14 | 2020 |
| Comparison of copper electroplating, copper wet etching and linear sweep voltammetry as techniques to investigate the porosity of atomic layer deposited Al2O3 C Vanhaverbeke, M Cauwe, A Stockman, MO de Beeck, H De Smet Thin Solid Films 686, 137424, 2019 | 13 | 2019 |
| Dynamic-ron control via proton irradiation in AlGaN/GaN transistors A Tajalli, A Stockman, M Meneghini, S Mouhoubi, A Banerjee, S Gerardin, ... 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 8 | 2018 |
| Charge trapping and stability of E-mode p-gate GaN HEMTs under soft-and hard-switching conditions F Masin, M Meneghini, E Canato, A Barbato, C De Santi, A Stockman, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020 | 6 | 2020 |
| Electronic Device Including a HEMT Including a Buried Region P Moens, A Stockman, P Vanmeerbeek, A Banerjee, FJG Declercq US Patent App. 16/241,172, 2020 | 4 | 2020 |
| Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stress D Favero, C De Santi, A Stockman, A Nardo, P Vanmeerbeek, M Tack, ... Microelectronics Reliability 150, 115129, 2023 | 3 | 2023 |
