| Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices SU Sharath, S Vogel, L Molina‐Luna, E Hildebrandt, C Wenger, J Kurian, ... Advanced Functional Materials 27 (32), 1700432, 2017 | 116 | 2017 |
| Forming‐free grain boundary engineered hafnium oxide resistive random access memory devices S Petzold, A Zintler, R Eilhardt, E Piros, N Kaiser, SU Sharath, T Vogel, ... Advanced Electronic Materials 5 (10), 1900484, 2019 | 77 | 2019 |
| Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM SU Sharath, MJ Joseph, S Vogel, E Hildebrandt, P Komissinskiy, J Kurian, ... Applied Physics Letters 109 (17), 2016 | 65 | 2016 |
| Electron holography on HfO2/HfO2− x bilayer structures with multilevel resistive switching properties G Niu, MA Schubert, SU Sharath, P Zaumseil, S Vogel, C Wenger, ... Nanotechnology 28 (21), 215702, 2017 | 40 | 2017 |
| Defect-stabilized substoichiometric polymorphs of hafnium oxide with semiconducting properties N Kaiser, T Vogel, A Zintler, S Petzold, A Arzumanov, E Piros, R Eilhardt, ... ACS Applied Materials & Interfaces 14 (1), 1290-1303, 2021 | 39 | 2021 |
| Heavy ion radiation effects on hafnium oxide-based resistive random access memory S Petzold, SU Sharath, J Lemke, E Hildebrandt, C Trautmann, L Alff IEEE Transactions on Nuclear Science 66 (7), 1715-1718, 2019 | 38 | 2019 |
| Analysis and simulation of the multiple resistive switching modes occurring in HfOx-based resistive random access memories using memdiodes S Petzold, E Miranda, SU Sharath, J Muñoz-Gorriz, T Vogel, E Piros, ... Journal of applied physics 125 (23), 2019 | 35 | 2019 |
| Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching S Petzold, E Piros, R Eilhardt, A Zintler, T Vogel, N Kaiser, A Radetinac, ... Advanced Electronic Materials 6 (11), 2000439, 2020 | 31 | 2020 |
| Gradual reset and set characteristics in yttrium oxide based resistive random access memory S Petzold, E Piros, SU Sharath, A Zintler, E Hildebrandt, L Molina-Luna, ... Semiconductor Science and Technology 34 (7), 075008, 2019 | 30 | 2019 |
| Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier E Piros, S Petzold, A Zintler, N Kaiser, T Vogel, R Eilhardt, C Wenger, ... Applied Physics Letters 117 (1), 2020 | 28 | 2020 |
| Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy G Niu, P Calka, P Huang, SU Sharath, S Petzold, A Gloskovskii, ... Materials Research Letters 7 (3), 117-123, 2019 | 28 | 2019 |
| FIB based fabrication of an operative Pt/HfO2/TiN device for resistive switching inside a transmission electron microscope A Zintler, U Kunz, Y Pivak, SU Sharath, S Vogel, E Hildebrandt, HJ Kleebe, ... Ultramicroscopy 181, 144-149, 2017 | 25 | 2017 |
| Role of Oxygen Defects in Conductive-Filament Formation in -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy E Piros, M Lonsky, S Petzold, A Zintler, SU Sharath, T Vogel, N Kaiser, ... Physical Review Applied 14 (3), 034029, 2020 | 19 | 2020 |
| Crystal and electronic structure of oxygen vacancy stabilized rhombohedral hafnium oxide N Kaiser, YJ Song, T Vogel, E Piros, T Kim, P Schreyer, S Petzold, ... ACS Applied Electronic Materials 5 (2), 754-763, 2023 | 17 | 2023 |
| Kinetically induced low-temperature synthesis of Nb3Sn thin films N Schäfer, N Karabas, JP Palakkal, S Petzold, M Major, N Pietralla, L Alff Journal of Applied Physics 128 (13), 2020 | 17 | 2020 |
| Defect-induced phase transition in hafnium oxide thin films: comparing heavy ion irradiation and oxygen-engineering effects T Vogel, N Kaiser, S Petzold, E Piros, N Guillaume, G Lefévre, ... IEEE Transactions on Nuclear Science 68 (8), 1542-1547, 2021 | 15 | 2021 |
| Controlling the formation of conductive pathways in memristive devices R Winkler, A Zintler, S Petzold, E Piros, N Kaiser, T Vogel, D Nasiou, ... Advanced Science 9 (33), 2201806, 2022 | 13 | 2022 |
| Structural and electrical response of emerging memories exposed to heavy ion radiation T Vogel, A Zintler, N Kaiser, N Guillaume, G Lefèvre, M Lederer, AL Serra, ... ACS nano 16 (9), 14463-14478, 2022 | 12 | 2022 |
| Matching conflicting oxidation conditions and strain accommodation in perovskite epitaxial thin-film ferroelectric varactors L Zeinar, P Salg, D Walk, S Petzold, A Arzumanov, R Jakoby, H Maune, ... Journal of Applied Physics 128 (21), 2020 | 9 | 2020 |
| Oxide thickness-dependent resistive switching characteristics of Cu/HfO2/Pt ECM devices T Kim, T Vogel, E Piros, D Nasiou, N Kaiser, P Schreyer, R Winkler, ... Applied Physics Letters 122 (2), 2023 | 8 | 2023 |
Lambert AlffTU Darmstadt在 tu-darmstadt.de 的电子邮件经过验证
