Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator pn junction Z Zeng, TA Morgan, D Fan, C Li, Y Hirono, X Hu, Y Zhao, JS Lee, J Wang, ... AIP Advances 3 (7), 2013 | 89 | 2013 |
MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures D Fan, PC Grant, SQ Yu, VG Dorogan, X Hu, Z Zeng, C Li, ME Hawkridge, ... Journal of Vacuum Science & Technology B 31 (3), 2013 | 27 | 2013 |
Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures D Fan, Z Zeng, X Hu, VG Dorogan, C Li, M Benamara, ME Hawkridge, ... Applied Physics Letters 101 (18), 2012 | 25 | 2012 |
Bismuth nano-droplets for group-V based molecular-beam droplet epitaxy C Li, ZQ Zeng, DS Fan, Y Hirono, J Wu, TA Morgan, X Hu, SQ Yu, ... Applied Physics Letters 99 (24), 2011 | 25 | 2011 |
Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy D Fan, Z Zeng, VG Dorogan, Y Hirono, C Li, YI Mazur, SQ Yu, ... Journal of Materials Science: Materials in Electronics 24, 1635-1639, 2013 | 24 | 2013 |
Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate AV Kuchuk, PM Lytvyn, C Li, HV Stanchu, YI Mazur, ME Ware, ... ACS applied materials & interfaces 7 (41), 23320-23327, 2015 | 22 | 2015 |
Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction AV Kuchuk, HV Stanchu, C Li, ME Ware, YI Mazur, VP Kladko, ... Journal of Applied Physics 116 (22), 2014 | 20 | 2014 |
Polarization effects in graded AlGaN nanolayers revealed by current-sensing and Kelvin probe microscopy PM Lytvyn, AV Kuchuk, YI Mazur, C Li, ME Ware, ZM Wang, VP Kladko, ... ACS applied materials & interfaces 10 (7), 6755-6763, 2018 | 19 | 2018 |
Local strain and crystalline defects in GaN/AlGaN/GaN (0001) heterostructures induced by compositionally graded AlGaN buried layers HV Stanchu, AV Kuchuk, YI Mazur, C Li, PM Lytvyn, M Schmidbauer, ... Crystal Growth & Design 19 (1), 200-210, 2018 | 14 | 2018 |
Effect of indium accumulation on the growth and properties of ultrathin In (Ga) N/GaN quantum wells C Li, Y Maidaniuk, AV Kuchuk, YI Mazur, M Benamara, ME Ware, ... Materials & Design 190, 108565, 2020 | 6 | 2020 |
High temperature capacitors using AlN grown by MBE as the dielectric PK Ghosh, M Sarollahi, C Li, T White, DT Debu, Q Yan, A Kuchuk, ... Journal of Vacuum Science & Technology B 36 (4), 2018 | 6 | 2018 |
Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN (0001) quantum well structures C Li, Y Maidaniuk, AV Kuchuk, S Shetty, P Ghosh, TP White, TA Morgan, ... Journal of Applied Physics 123 (19), 2018 | 4 | 2018 |
Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells S Ojo, H Stanchu, S Acharya, A Said, S Amoah, M Benamara, C Li, ... Journal of Crystal Growth 605, 127062, 2023 | 1 | 2023 |
Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film FM de Oliveira, C Li, PK Ghosh, AV Kuchuk, ME Ware, YI Mazur, ... Journal of Vacuum Science & Technology B 41 (5), 2023 | | 2023 |
Characterization of novel nonlinear optical polymeric film fabricated from dye doped PMMA L Han, Y Jiang, JS Yu, W Li, P Hao, C Li 3rd International Symposium on Advanced Optical Manufacturing and Testing …, 2007 | | 2007 |