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Fengjuan Wang
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年份
An effective approach of reducing the keep-out-zone induced by coaxial through-silicon-via
F Wang, Z Zhu, Y Yang, X Yin, X Liu, R Ding
IEEE Transactions on Electron Devices 61 (8), 2928-2934, 2014
482014
Miniaturized SIW bandpass filter based on TSV technology for THz applications
F Wang, VF Pavlidis, N Yu
IEEE Transactions on Terahertz Science and Technology 10 (4), 423-426, 2020
462020
An ultracompact butterworth low-pass filter based on coaxial through-silicon vias
F Wang, N Yu
IEEE transactions on very large scale integration (VLSI) systems 25 (3 …, 2016
322016
Simple and accurate inductance model of 3D inductor based on TSV
F Wang, N Yu
Electronics Letters 52 (21), 1815-1816, 2016
222016
Capacitance characterization of tapered through-silicon-via considering MOS effect
F Wang, Z Zhu, Y Yang, X Liu, R Ding
Microelectronics Journal 45 (2), 205-210, 2014
192014
A miniatured passive low-pass filter with ultrawide stopband based on 3-D integration technology
X Yin, F Wang, Q Lu, X Liu, Y Liu, Y Yang
IEEE Microwave and Wireless Components Letters 32 (1), 29-32, 2021
162021
Analytical models for the thermal strain and stress induced by annular through-silicon-via (TSV)
F Wang, Z Zhu, Y Yang, X Liu, R Ding
IEICE Electronics Express 10 (20), 20130666-20130666, 2013
162013
A novel guard method of through-silicon-via (TSV)
F Wang, J Huang, N Yu
IEICE Electronics Express 15 (11), 20180421-20180421, 2018
122018
An effective approach of improving electrical and thermo-mechanical reliabilities of through-silicon vias
F Wang, N Yu
IEEE Transactions on Device and Materials Reliability 17 (1), 106-112, 2016
122016
A thermal model for the top layer of 3D integrated circuits considering through silicon vias
F Wang, Z Zhu, Y Yang, N Wang
2011 9th IEEE International Conference on ASIC, 618-620, 2011
122011
Study on thermal stress and keep-out zone induced by Cu and SiO2 filled coaxial-annular through-silicon via
F Wang, N Yu
IEICE Electronics Express 12 (22), 20150844-20150844, 2015
112015
Thermo-mechanical performance of Cu and SiO2 filled coaxial through-silicon-via (TSV)
F Wang, Z Zhu, Y Yang, X Liu, R Ding
IEICE Electronics Express 10 (24), 20130894-20130894, 2013
112013
A transformer with high coupling coefficient and small area based on TSV
F Wang, R Ren, X Yin, N Yu, Y Yang
Integration 81, 211-220, 2021
102021
A Miniaturized Wideband Interdigital Bandpass Filter With High Out-Band Suppression Based on TSV Technology for W-Band Application
F Wang, K Zhang, X Yin, N Yu, Y Yang
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 30 (7), 989-992, 2022
92022
Impedance matching for the reduction of signal reflection in high speed multilevel three-dimensional integrated chips
X Liu, Z Zhu, Y Yang, F Wang, R Ding
Journal of Semiconductors 35 (1), 015008, 2014
92014
Characteristics of coaxial-annular through-silicon-via in microwave field
F Wang, G Wang, N Yu
2016 17th International Conference on Electronic Packaging Technology (ICEPT …, 2016
82016
A compact sixth-order common-mode noise suppression filter based on 3-D integration technology
F Wang, C Hou, X Yin, N Yu, Y Yang
IEEE Transactions on Components, Packaging and Manufacturing Technology 13 …, 2023
72023
Design of compact LC lowpass filters based on coaxial through-silicon vias array
X Yin, F Wang, VF Pavlidis, X Liu, Q Lu, T Zhang, Y Liu
Microelectronics Journal 116, 105217, 2021
72021
Effects of coaxial through-silicon via on carrier mobility along [100] and [110] crystal directions of (100) silicon
F Wang, N Yu, Z Zhu, X Yin, Y Yang
IEICE Electronics Express 12 (14), 20150434-20150434, 2015
72015
A highly efficient heat-dissipation system using RDL and TTSV array in 3D IC
F Wang, Y Li, N Yu
2019 IEEE International Conference on Electron Devices and Solid-State …, 2019
62019
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