关注
Monia Spera
Monia Spera
CNR-IMM Catania
在 imm.cnr.it 的电子邮件经过验证
标题
引用次数
引用次数
年份
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
F Roccaforte, F Giannazzo, A Alberti, M Spera, M Cannas, I Cora, B Pécz, ...
Materials Science in Semiconductor Processing 94, 164-170, 2019
352019
Effect of high temperature annealing (T> 1650 C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
M Spera, D Corso, S Di Franco, G Greco, A Severino, P Fiorenza, ...
Materials Science in Semiconductor Processing 93, 274-279, 2019
292019
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
M Spera, C Miccoli, RL Nigro, C Bongiorno, D Corso, S Di Franco, ...
Materials Science in Semiconductor Processing 78, 111-117, 2018
192018
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
M Spera, G Greco, RL Nigro, C Bongiorno, F Giannazzo, M Zielinski, ...
Materials Science in Semiconductor Processing 93, 295-298, 2019
162019
Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures
G Greco, P Fiorenza, M Spera, F Giannazzo, F Roccaforte
Journal of Applied Physics 129 (23), 2021
152021
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
M Vivona, G Greco, M Spera, P Fiorenza, F Giannazzo, A La Magna, ...
Journal of Physics D: Applied Physics 54 (44), 445107, 2021
142021
Metal/semiconductor barrier properties of non-recessed Ti/Al/Ti and Ta/Al/Ta Ohmic contacts on AlGaN/GaN heterostructures
M Spera, G Greco, R Lo Nigro, S Scalese, C Bongiorno, M Cannas, ...
Energies 12 (14), 2655, 2019
142019
Ohmic contacts on p-Type Al-Implanted 4H-SiC layers after different post-implantation annealings
M Spera, G Greco, D Corso, S Di Franco, A Severino, AA Messina, ...
Materials 12 (21), 3468, 2019
132019
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide
M Spera, G Greco, A Severino, M Vivona, P Fiorenza, F Giannazzo, ...
Applied Physics Letters 117 (1), 2020
82020
Environment assisted photoconversion of luminescent surface defects in SiO2 nanoparticles
L Spallino, M Spera, L Vaccaro, S Agnello, FM Gelardi, AF Zatsepin, ...
Applied Surface Science 420, 94-99, 2017
72017
Fabrication and characterization of ohmic contacts to 3C-SiC layers grown on silicon
M Spera, G Greco, R Lo Nigro, S Di Franco, D Corso, P Fiorenza, ...
Materials Science Forum 963, 485-489, 2019
42019
Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer
G Greco, S Di Franco, R Lo Nigro, C Bongiorno, M Spera, P Badalà, ...
Applied Physics Letters 124 (1), 2024
12024
Manufacturing process of an ohmic contact of a hemt device and hemt device
F Iucolano, G Greco, F Roccaforte, M SPERA
US Patent App. 18/156,976, 2023
2023
Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology
F Roccaforte, M Spera, S Di Franco, R Lo Nigro, P Fiorenza, F Giannazzo, ...
Materials Science Forum 1004, 725-730, 2020
2020
Contatti ohmici su semiconduttori ad ampia band gap
M Spera
Università degli studi di Catania, 2020
2020
系统目前无法执行此操作,请稍后再试。
文章 1–15