| Recoil-ion-induced single event upsets in nanometer CMOS SRAM under low-energy proton radiation Z Wu, S Chen, J Yu, J Chen, P Huang, R Song IEEE Transactions on Nuclear Science 64 (1), 654-664, 2016 | 30 | 2016 |
| Temperature-dependent stress-induced voiding in dual-damascene Cu interconnects ZY Wu, YT Yang, CC Chai, YJ Li, JY Wang, J Liu, B Liu Microelectronics Reliability 48 (4), 578-583, 2008 | 16 | 2008 |
| Simulation study of large-scale charge sharing mitigation using seamless guard band P Huang, S Chen, J Chen, L Bin, Z Wu IEEE Transactions on Device and Materials Reliability 17 (1), 176-183, 2016 | 14 | 2016 |
| Heavy ion, proton, and neutron charge deposition analyses in several semiconductor materials Z Wu, S Chen IEEE Transactions on Nuclear Science 65 (8), 1791-1799, 2018 | 11 | 2018 |
| Structure-dependent behavior of stress-induced voiding in Cu interconnects ZY Wu, YT Yang, CC Chai, YJ Li, JY Wang, B Li, J Liu Thin Solid Films 518 (14), 3778-3781, 2010 | 11 | 2010 |
| nMOS transistor location adjustment for N-Hit single-event transient mitigation in 65-nm CMOS bulk technology Z Wu, S Chen IEEE Transactions on Nuclear Science 65 (1), 418-425, 2017 | 10 | 2017 |
| Experimental characterization of the dominant multiple nodes charge collection mechanism in metal oxide-semiconductor transistors R Song, S Chen, Y Chi, Z Wu, B Liang, J Chen, J Xu, P Hao, J Yu Applied Physics Letters 110 (23), 2017 | 10 | 2017 |
| The effect of annealing on electrical properties of fluorinated amorphous carbon films Z Wu, Y Yang, J Wang Diamond and related materials 17 (2), 118-122, 2008 | 9 | 2008 |
| Impacts of proton radiation on heavy-ion-induced single-event transients in 65-nm CMOS technology Z Wu, S Chen, J Chen, P Huang IEEE Transactions on Nuclear Science 66 (1), 177-183, 2018 | 8 | 2018 |
| SEU Tolerance Efficiency of Multiple Layout-Hardened 28 nm DICE D Flip-Flops Y Chi, C Cai, Z He, Z Wu, Y Fang, J Chen, B Liang Electronics 11 (7), 972, 2022 | 5 | 2022 |
| Fast dynamic IR-drop prediction using machine learning in bulk FinFET technologies P Huang, C Ma, Z Wu Symmetry 13 (10), 1807, 2021 | 5 | 2021 |
| Analysis of single-event transient sensitivity in fully depleted silicon-on-insulator MOSFETs JY Xu, SM Chen, RQ Song, ZY Wu, JJ Chen Nuclear Science and Techniques 29 (4), 49, 2018 | 5 | 2018 |
| Characterization of single-event transients induced by high LET heavy ions in 16 nm bulk FinFET inverter chains Y Chi, Z Wu, P Huang, Q Sun, B Liang, Z Zhao Microelectronics Reliability 130, 114490, 2022 | 4 | 2022 |
| On-chip relative single-event transient/single-event upset susceptibility test circuit for integrated circuits working in real time P Hao, S Chen, Z Wu, Y Chi IEEE Transactions on Nuclear Science 65 (1), 376-381, 2017 | 4 | 2017 |
| TAISAM: A Transistor Array-Based Test Method for Characterizing Heavy Ion-Induced Sensitive Areas in Semiconductor Materials J Shao, R Song, Y Chi, B Liang, Z Wu Electronics 11 (13), 2043, 2022 | 3 | 2022 |
| Study on circuit modeling of stretchable serpentine interconnects Z Wu, C Peng, J Liao, Q Chen International Journal of Circuit Theory and Applications 50 (3), 988-996, 2022 | 3 | 2022 |
| Effect of cell placement on single-event transient pulse in a bulk finfet technology P Huang, Z Zhao, Y Chi, B Liang, C Ma, Q Sun, Z Wu IEEE Transactions on Nuclear Science 68 (5), 1103-1110, 2021 | 3 | 2021 |
| An investigation of FinFET single-event latch-up characteristic and mitigation method D Li, T Liu, Z Wu, C Cai, P Zhao, Z He, J Liu Microelectronics Reliability 114, 113901, 2020 | 3 | 2020 |
| Higher NMOS single event transient susceptibility compared to PMOS in sub-20nm bulk FinFET Q Sun, Y Guo, B Liang, M Tao, Y Chi, P Huang, Z Wu, D Luo, J Chen IEEE Electron Device Letters, 2023 | 1 | 2023 |
| Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology DQ Li, TQ Liu, PX Zhao, ZY Wu, TS Wang, J Liu Chinese Physics B 31 (5), 056106, 2022 | 1 | 2022 |
