| Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates Z Shi, X Wang, Q Li, P Yang, G Lu, R Jiang, H Wang, C Zhang, C Cong, ... Nature communications 11 (1), 849, 2020 | 100 | 2020 |
| Synthesis of high‐quality graphene and hexagonal boron nitride monolayer In‐plane heterostructure on Cu–Ni alloy G Lu, T Wu, P Yang, Y Yang, Z Jin, W Chen, S Jia, H Wang, G Zhang, ... Advanced Science 4 (9), 1700076, 2017 | 85 | 2017 |
| High-Performance WSe2 Photodetector Based on a Laser-Induced p–n Junction J Chen, Q Wang, Y Sheng, G Cao, P Yang, Y Shan, F Liao, Z Muhammad, ... ACS applied materials & interfaces 11 (46), 43330-43336, 2019 | 79 | 2019 |
| Electronic/optoelectronic memory device enabled by tellurium‐based 2D van der Waals heterostructure for in‐sensor reservoir computing at the optical communication band J Zha, S Shi, A Chaturvedi, H Huang, P Yang, Y Yao, S Li, Y Xia, Z Zhang, ... Advanced Materials 35 (20), 2211598, 2023 | 54 | 2023 |
| Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility P Yang, J Zha, G Gao, L Zheng, H Huang, Y Xia, S Xu, T Xiong, Z Zhang, ... Nano-micro letters 14 (1), 109, 2022 | 46 | 2022 |
| Influence of seeding promoters on the properties of CVD grown monolayer molybdenum disulfide P Yang, AG Yang, L Chen, J Chen, Y Zhang, H Wang, L Hu, RJ Zhang, ... Nano Research 12, 823-827, 2019 | 45 | 2019 |
| Low dimensional transition metal oxide towards advanced electrochromic devices T Rao, Y Zhou, J Jiang, P Yang, W Liao Nano Energy 100, 107479, 2022 | 36 | 2022 |
| Grain boundaries in chemical-vapor-deposited atomically thin hexagonal boron nitride X Ren, J Dong, P Yang, J Li, G Lu, T Wu, H Wang, W Guo, Z Zhang, ... Physical Review Materials 3 (1), 014004, 2019 | 32 | 2019 |
| BaTiO3-assisted exfoliation of boron nitride nanosheets for high-temperature energy storage dielectrics and thermal management M Wu, L Yang, Y Zhou, J Jiang, L Zhang, T Rao, P Yang, B Liu, W Liao Chemical Engineering Journal 427, 131860, 2022 | 30 | 2022 |
| Self-assembling SiC nanoflakes/MXenes composites embedded in polymers towards efficient electromagnetic wave attenuation Y Zhou, M Wu, J Jiang, P Yang, T Rao, JJ Liou, W Liao Applied Surface Science 574, 151463, 2022 | 21 | 2022 |
| Large-Area Monolayer MoS2 Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices P Yang, H Yang, Z Wu, F Liao, X Guo, J Deng, Q Xu, H Wang, J Sun, ... ACS Applied Nano Materials 4 (11), 12127-12136, 2021 | 20 | 2021 |
| Controlled synthesis of uniform multilayer hexagonal boron nitride films on Fe 2 B alloy Z Shi, G Lu, P Yang, T Wu, W Yin, C Zhang, R Jiang, X Xie RSC advances 9 (18), 10155-10158, 2019 | 19 | 2019 |
| Defect engineering of two-dimensional materials towards next-generation electronics and optoelectronics J Jiang, P Yang, JJ Liou, W Liao, Y Chai Nano Research 16 (2), 3104-3124, 2023 | 15 | 2023 |
| Fluoride-assisted preparation of plasmonic oxygen-deficient MoO3− x nanowires for dual-band electrochromic smart windows T Rao, Y Zhou, J Jiang, P Yang, X Wang, W Liao Journal of The Electrochemical Society 169 (6), 066506, 2022 | 13 | 2022 |
| Density of defect states retrieved from the hysteretic gate transfer characteristics of monolayer MoS2 field effect transistors Q Xu, Y Sun, P Yang, Y Dan AIP Advances 9 (1), 2019 | 13 | 2019 |
| A 2D Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing J Zha, Y Xia, S Shi, H Huang, S Li, C Qian, H Wang, P Yang, Z Zhang, ... Advanced Materials 36 (3), 2308502, 2024 | 12 | 2024 |
| Printed electronics based on 2D material inks: preparation, properties, and applications toward memristors X Chen, X Wang, Y Pang, G Bao, J Jiang, P Yang, Y Chen, T Rao, W Liao Small Methods 7 (2), 2201156, 2023 | 12 | 2023 |
| Remarkable quality improvement of as-grown monolayer MoS 2 by sulfur vapor pretreatment of SiO 2/Si substrates P Yang, Y Shan, J Chen, G Ekoya, J Han, ZJ Qiu, J Sun, F Chen, H Wang, ... Nanoscale 12 (3), 1958-1966, 2020 | 12 | 2020 |
| Fabrication of a mesoporous multimetallic oxide-based ion-sensitive field effect transistor for pH sensing T Rao, J Li, W Cai, M Wu, J Jiang, P Yang, Y Zhou, W Liao ACS omega 6 (47), 32297-32303, 2021 | 10 | 2021 |
| Green-amber emission from high indium content InGaN quantum wells improved by interface modification of semipolar (112 [combining macron] 2) GaN templates Z Wu, S Lu, P Yang, P Tian, L Hu, R Liu, J Kang, Z Fang CrystEngComm 21 (2), 244-250, 2019 | 10 | 2019 |
Chaoliang TanThe University of Hong Kong在 hku.hk 的电子邮件经过验证
