| Passive alignment using slanted wall pedestal I Cayrefourcq, C Pusarla US Patent 6,643,434, 2003 | 100 | 2003 |
| Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2gate stack V Barral, T Poiroux, F Andrieu, C Buj-Dufournet, O Faynot, T Ernst, ... 2007 IEEE International Electron Devices Meeting, 61-64, 2007 | 99 | 2007 |
| Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility W Xiong, CR Cleavelin, P Kohli, C Huffman, T Schulz, K Schruefer, ... IEEE Electron Device Letters 27 (7), 612-614, 2006 | 83 | 2006 |
| Advanced SOI Substrate Manufacturing C Mazuré, GK Celler, C Maleville, I Cayrefourcq 2004 International Conference on Integrated Circuit Design and Technology …, 2004 | 74 | 2004 |
| Performance enhancement of MUGFET devices using super critical strained-SOI (SC-SSOI) and CESL N Collaert, R Rooyackers, F Clemente, P Zimmerman, I Cayrefourcq, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 52-53, 2006 | 64 | 2006 |
| Electro-optical device, notably for optical distribution I Cayrefourcq US Patent 6,212,319, 2001 | 58 | 2001 |
| Method of detaching a thin film at moderate temperature after co-implantation I Cayrefourcq, NB Mohamed, C Lagahe-Blanchard, NP Nguyen US Patent 7,176,108, 2007 | 48 | 2007 |
| 25nm Short and narrow strained FDSOI with TiN/HfO2 gate stack S Deleonibus, C Mazure, P Gaud, H Grampeix, JP Colonna, B Previtali, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 134-135, 2006 | 45 | 2006 |
| Method of catastrophic transfer of a thin film after co-implantation NP Nguyen, I Cayrefourcq, C Lagahe-Blanchard US Patent 7,772,087, 2010 | 35 | 2010 |
| Mechanism of the Smart Cut™ layer transfer in silicon by hydrogen and helium coimplantation in the medium dose range P Nguyen, I Cayrefourcq, KK Bourdelle, A Boussagol, E Guiot, ... Journal of applied physics 97 (8), 2005 | 35 | 2005 |
| Study of HCl and secco defect etching for characterization of thick sSOI A Abbadie, SW Bedell, JM Hartmann, DK Sadana, F Brunier, C Figuet, ... Journal of The Electrochemical Society 154 (8), H713, 2007 | 34 | 2007 |
| Ultra-thin fully depleted SOI devices with thin BOX, ground plane and strained liner booster C Gallon, C Fenouillet-Beranger, A Vandooren, F Boeuf, S Monfray, ... 2006 IEEE international SOI Conferencee Proceedings, 17-18, 2006 | 34 | 2006 |
| New layer transfers obtained by the SmartCut process H Moriceau, F Fournel, B Aspar, B Bataillou, A Beaumont, C Morales, ... Journal of Electronic Materials 32, 829-835, 2003 | 32 | 2003 |
| Impact of Mobility Boosters (XsSOI, CESL, TiN gate) on the Performance of< 100> or< 110> oriented FDSOI cMOSFETs for the 32nm Node F Andrieu, O Faynot, F Rochette, JC Barbé, C Buj, Y Bogumilowicz, ... 2007 IEEE Symposium on VLSI Technology, 50-51, 2007 | 31 | 2007 |
| Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation NP Nguyen, I Cayrefourcq, C Lagahe-Blanchard, K Bourdelle, A Tauzin, ... US Patent 8,309,431, 2012 | 30 | 2012 |
| MEMS-based selectable laser source I Cayrefourcq, PP Maigne US Patent 6,693,926, 2004 | 30 | 2004 |
| Performance of super-critical strained-Si directly on insulator (SC-SSOI) CMOS based on high-performance PD-SOI technology AVY Thean, T White, M Sadaka, L McCormick, M Ramon, R Mora, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 134-135, 2005 | 27 | 2005 |
| Power capability of LiTDI-based electrolytes for lithium-ion batteries S Paillet, G Schmidt, S Ladouceur, J Fréchette, F Barray, D Clément, ... Journal of Power Sources 294, 507-515, 2015 | 24 | 2015 |
| Stress hybridization for multigate devices fabricated on supercritical strained-SOI (SC-SSOI) N Collaert, R Rooyackers, A De Keersgieter, FE Leys, I Cayrefourcq, ... IEEE electron device letters 28 (7), 646-648, 2007 | 23 | 2007 |
| Straightforward integration flow of a silicon-containing block copolymer for line–space patterning A Legrain, G Fleury, M Mumtaz, C Navarro, J Arias-Zapata, X Chevalier, ... ACS applied materials & interfaces 9 (49), 43043-43050, 2017 | 22 | 2017 |
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