| Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies B Narasimham, BL Bhuva, RD Schrimpf, LW Massengill, MJ Gadlage, ... IEEE Transactions on Nuclear Science 54 (6), 2506-2511, 2007 | 228 | 2007 |
| Single event transient pulse widths in digital microcircuits MJ Gadlage, RD Schrimpf, JM Benedetto, PH Eaton, DG Mavis, M Sibley, ... IEEE transactions on nuclear science 51 (6), 3285-3290, 2004 | 220 | 2004 |
| Heavy ion-induced digital single-event transients in deep submicron processes J Benedetto, P Eaton, K Avery, D Mavis, M Gadlage, T Turflinger, ... IEEE Transactions on Nuclear Science 51 (6), 3480-3485, 2004 | 198 | 2004 |
| Single-event transient pulse quenching in advanced CMOS logic circuits JR Ahlbin, LW Massengill, BL Bhuva, B Narasimham, MJ Gadlage, ... IEEE Transactions on Nuclear Science 56 (6), 3050-3056, 2009 | 197 | 2009 |
| Digital single event transient trends with technology node scaling JM Benedetto, PH Eaton, DG Mavis, M Gadlage, T Turflinger IEEE Transactions on Nuclear Science 53 (6), 3462-3465, 2006 | 189 | 2006 |
| Single event transient pulsewidth measurements using a variable temporal latch technique P Eaton, J Benedetto, D Mavis, K Avery, M Sibley, M Gadlage, T Turflinger IEEE transactions on nuclear science 51 (6), 3365-3368, 2004 | 180 | 2004 |
| The effect of layout topology on single-event transient pulse quenching in a 65 nm bulk CMOS process JR Ahlbin, MJ Gadlage, DR Ball, AW Witulski, BL Bhuva, RA Reed, ... IEEE Transactions on Nuclear Science 57 (6), 3380-3385, 2010 | 120 | 2010 |
| Scaling trends in SET pulse widths in sub-100 nm bulk CMOS processes MJ Gadlage, JR Ahlbin, B Narasimham, BL Bhuva, LW Massengill, ... IEEE Transactions on Nuclear Science 57 (6), 3336-3341, 2010 | 118 | 2010 |
| Variation of digital SET pulse widths and the implications for single event hardening of advanced CMOS processes JM Benedetto, PH Eaton, DG Mavis, M Gadlage, T Turflinger IEEE Transactions on Nuclear Science 52 (6), 2114-2119, 2005 | 95 | 2005 |
| Effects of guard bands and well contacts in mitigating long SETs in advanced CMOS processes B Narasimham, BL Bhuva, RD Schrimpf, LW Massengill, MJ Gadlage, ... IEEE Transactions on Nuclear Science 55 (3), 1708-1713, 2008 | 79 | 2008 |
| Soft errors induced by high-energy electrons MJ Gadlage, AH Roach, AR Duncan, AM Williams, DP Bossev, MJ Kay IEEE Transactions on Device and Materials Reliability 17 (1), 157-162, 2016 | 77 | 2016 |
| Independent measurement of SET pulse widths from N-hits and P-hits in 65-nm CMOS S Jagannathan, MJ Gadlage, BL Bhuva, RD Schrimpf, B Narasimham, ... IEEE Transactions on Nuclear Science 57 (6), 3386-3391, 2010 | 71 | 2010 |
| Effect of multiple-transistor charge collection on single-event transient pulse widths JR Ahlbin, MJ Gadlage, NM Atkinson, B Narasimham, BL Bhuva, ... IEEE Transactions on Device and Materials Reliability 11 (3), 401-406, 2011 | 65 | 2011 |
| Electron-induced single-event upsets in 45-nm and 28-nm bulk CMOS SRAM-based FPGAs operating at nominal voltage MJ Gadlage, AH Roach, AR Duncan, MW Savage, MJ Kay IEEE Transactions on Nuclear Science 62 (6), 2717-2724, 2015 | 53 | 2015 |
| Single-event transient measurements in nMOS and pMOS transistors in a 65-nm bulk CMOS technology at elevated temperatures MJ Gadlage, JR Ahlbin, B Narasimham, BL Bhuva, LW Massengill, ... IEEE Transactions on Device and Materials Reliability 11 (1), 179-186, 2010 | 52 | 2010 |
| Temperature dependence of digital single-event transients in bulk and fully-depleted SOI technologies MJ Gadlage, JR Ahlbin, V Ramachandran, P Gouker, CA Dinkins, ... IEEE Transactions on Nuclear Science 56 (6), 3115-3121, 2009 | 51 | 2009 |
| Laser verification of charge sharing in a 90 nm bulk CMOS process OA Amusan, MC Casey, BL Bhuva, D McMorrow, MJ Gadlage, ... IEEE Transactions on Nuclear Science 56 (6), 3065-3070, 2009 | 49 | 2009 |
| Generation and Propagation of Single Event Transients in 0.18- Fully Depleted SOI P Gouker, J Brandt, P Wyatt, B Tyrrell, A Soares, J Knecht, C Keast, ... IEEE Transactions on Nuclear Science 55 (6), 2854-2860, 2008 | 43 | 2008 |
| Digital device error rate trends in advanced CMOS technologies MJ Gadlage, PH Eaton, JM Benedetto, M Carts, V Zhu, TL Turflinger IEEE Transactions on Nuclear Science 53 (6), 3466-3471, 2006 | 43 | 2006 |
| Effect of voltage fluctuations on the single event transient response of deep submicron digital circuits MJ Gadlage, RD Schrimpf, B Narasimham, BL Bhuva, PH Eaton, ... IEEE Transactions on Nuclear Science 54 (6), 2495-2499, 2007 | 40 | 2007 |
