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Aissa BELLAKHDAR
Aissa BELLAKHDAR
Département Electronique,Université Amar Thlidji Laghouat
在 lagh-univ.dz 的电子邮件经过验证
标题
引用次数
引用次数
年份
The thermal effect on the output conductance in AlGaN/GaN HEMT's
A Bellakhdar, A Telia, L Semra, A Soltani
2012 24th International Conference on Microelectronics (ICM), 1-4, 2012
72012
An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects
A Bellakhdar, A Telia, JL Coutaz
International Journal of Electrical and Computer Engineering 10 (2), 1791-1804, 2020
42020
Influence of the GaN cap layer thickness on the two-dimensional electron gas (2-DEG) sheet charge density of GaN/AlInN/GaN HEMTs with polarization effect
A Bellakhdara, A Teliab
Digest Journal of Nanomaterials and Biostructures 17 (1), 233-246, 2022
32022
Effect of strain relaxation on the drain conductance in AlGaN/GaN HEMTs
A Bellakhdar, A Telia, L Semra, A Soltani
2012 International Conference on Engineering and Technology (ICET), 1-5, 2012
22012
Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMT
A Telia, A Bellakhdar, L Semra, A Soltani
2013 Saudi International Electronics, Communications and Photonics …, 2013
12013
Electrical Properties of thin InGaN Cap layer for AlGaN/GaN HEMTs
A Bellakhdar, F Bendelala, A Cheknane
6th International Conference on Applied Engineering and Natural Sciences …, 2024
2024
Investigation of photovoltaic characteristics performance of p-InGaN/n-InGaN single junction solar cells using SCAPS 1D
A Bellakhdar, M Birane, N Selmane, A Cheknane, A Telia
2023 1st International Conference on Renewable Solutions for Ecosystems …, 2023
2023
Effect of some physical parameters on the performance of ZnO/ a-Si:H/n a-Si:H/i -c-Si/p /BSF /Al heterojunction solar cells
N SELMANE, F KHEMLOUL, A BELLAKHDAR, A CHEKNANE
SÉMINAIRE INTERNATIONAL SUR LES SCIENCES DE LA MATIERE (PHYSIQUE ET CHIMIE …, 2021
2021
Structural properties study of Bi2S3 thin films prepared by chemical bath deposition technique
N Selmane, N Hamdadou, A Cheknane, A Bellakhdar
First International Conférence on Sustainable Energy and Advanced Materials …, 2021
2021
Influence of GaN cap layer on the threshold voltage in GaN/AlGaN/GaN HEMT
A Bellakhdar, A Telia, N Selmane
First International Conférence on Sustainable Energy and Advanced Materials …, 2021
2021
Energy Management and the Control of Distributed Energy Systems in Photovoltaic Application
M Birane, L Baadj, A Bellakhdar, K Kouzi, C Larbes, A Cheknane
Séminaire International sur l’Industrie et la Technologie, Algerian Journal …, 2021
2021
A high efficiency (~25.62%): Influence of thickness and work function of transparent conducting oxide of the performance of heterojunction solar cells
N Selmane, A Cheknane, A Bellakhdar, F Khemloul
Séminaire International sur l’Industrie et la Technologie, Webinaire par …, 2021
2021
Study of threshold voltage in GaN/AlGaN/GaN high electron mobility transistor (HEMT)
A Bellakhdar, N Selmane, A Cheknane
Séminaire International sur l’Industrie et la Technologie, Webinaire par …, 2021
2021
Comparative Study of Threshold Voltage in GaN/ Al(Ga,In)N/ GaN HEMTS Structures with Polarization Effect
A Bellakhdar, A Telia
XIIIèmes Journées Maghrébines des Sciences des Matériaux JMSM’2020, Oran …, 2020
2020
OPTIMIZED ELECTRICAL ARCHITECTURES AND THE CONTROL OF ENERGY IN PV APPLICATION.
M Birane, L Baadj, A Bellakhdar, K Kouzi, C Larbes, A Cheknane
Etude et modélisation des phénomènes thermiques et de transport sur les performances des composants de puissance à base des hétérostructures AlGaN/GaN, AlInN/GaN.
A Bellakhdar, A Telia
Université Frères Mentouri-Constantine 1, 0
Modélisation non-linéaire des effets électriques dans les transistors HEMTs AIGaN/GaN
A Bellakhdar, A Telia
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