Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect A Rassekh, JM Sallese, F Jazaeri, M Fathipour, AM Ionescu IEEE Journal of the Electron Devices Society 8, 939-947, 2020 | 36 | 2020 |
A single-gate SOI nanosheet junctionless transistor at 10-nm gate length: design guidelines and comparison with the conventional SOI FinFET A Rassekh, M Fathipour Journal of Computational Electronics 19 (2), 631-639, 2020 | 21 | 2020 |
Modeling interface charge traps in junctionless FETs, including temperature effects A Rassekh, F Jazaeri, M Fathipour, JM Sallese IEEE Transactions on Electron Devices 66 (11), 4653-4659, 2019 | 17 | 2019 |
Nonhysteretic condition in negative capacitance junctionless FETs A Rassekh, F Jazaeri, JM Sallese IEEE Transactions on Electron Devices 69 (2), 820-826, 2021 | 15 | 2021 |
An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction S Kamaei, A Saeidi, F Jazaeri, A Rassekh, N Oliva, M Cavalieri, ... IEEE Electron Device Letters 41 (4), 645-648, 2020 | 13 | 2020 |
Design space of negative capacitance in FETs A Rassekh, F Jazaeri, JM Sallese IEEE Transactions on Nanotechnology 21, 236-243, 2022 | 8 | 2022 |
Tunneling Current Through a Double Quantum Dots System A Rassekh, M Shalchian, JM Sallese, F Jazaeri Ieee Access 10, 75245-75256, 2022 | 4 | 2022 |
Design space of quantum dot spin qubits A Rassekh, M Shalchian, JM Sallese, F Jazaeri Physica B: Condensed Matter 666, 415133, 2023 | 1 | 2023 |
Communication at the speed of light (CaSoL): A new paradigm for designing global wires R Sarvari, A Rassekh, S Shahhosseini IEEE Transactions on Electron Devices 66 (8), 3466-3472, 2019 | 1 | 2019 |
Communication at the speed of light over an on-chip interconnect A Rassekh, R Sarvari, S Shahhosseini US Patent 10,839,120, 2020 | | 2020 |
Modeling the Impact of Interface Charge Traps in Double-Gate Junctionless FETs, Including Temperature Effects A Rassekh, F Jazaeri, M Fathipour, JM Sallese arXiv preprint arXiv:1907.08429, 2019 | | 2019 |