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Xiaohe Huang
Xiaohe Huang
在 fudan.edu.cn 的电子邮件经过验证
标题
引用次数
引用次数
年份
2D semiconductors for specific electronic applications: from device to system
X Huang, C Liu, P Zhou
npj 2D Materials and Applications 6 (1), 51, 2022
982022
A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current
Z Tang, C Liu, X Huang, S Zeng, L Liu, J Li, YG Jiang, DW Zhang, P Zhou
Nano letters 21 (4), 1758-1764, 2021
982021
In-memory computing to break the memory wall
X Huang, C Liu, YG Jiang, P Zhou
Chinese Physics B 29 (7), 078504, 2020
562020
An ultrafast bipolar flash memory for self-activated in-memory computing
X Huang, C Liu, Z Tang, S Zeng, S Wang, P Zhou
Nature nanotechnology 18 (5), 486-492, 2023
422023
An application-specific image processing array based on WSe2 transistors with electrically switchable logic functions
S Zeng, C Liu, X Huang, Z Tang, L Liu, P Zhou
Nature Communications 13 (1), 56, 2022
362022
Ultrathin multibridge channel transistor enabled by van der Waals assembly
X Huang, C Liu, S Zeng, Z Tang, S Wang, X Chen, DW Zhang, P Zhou
Advanced Materials 33 (37), 2102201, 2021
322021
Neuromorphic engineering for hardware computational acceleration and biomimetic perception motion integration
S Wang, X Chen, X Huang, D Wei Zhang, P Zhou
Advanced Intelligent Systems 2 (11), 2000124, 2020
262020
An ultrasmall organic synapse for neuromorphic computing
S Liu, J Zeng, Z Wu, H Hu, A Xu, X Huang, W Chen, Q Chen, Z Yu, Y Zhao, ...
Nature Communications 14 (1), 7655, 2023
202023
Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS2-channel transistor
L Liu, Y Sun, X Huang, C Liu, Z Tang, S Zeng, DW Zhang, S Deng, P Zhou
Materials Futures 1 (2), 025301, 2022
202022
High drive and low leakage current MBC FET with channel thickness 1.2 nm/0.6 nm
X Huang, C Liu, Z Tang, S Zeng, L Liu, X Hou, H Chen, J Li, YG Jiang, ...
2020 IEEE International Electron Devices Meeting (IEDM), 12.1. 1-12.1. 4, 2020
152020
2022 roadmap on neuromorphic devices and applications research in China
Q Wan, C Wan, H Wu, Y Yang, X Huang, P Zhou, L Chen, TY Wang, Y Li, ...
Neuromorphic Computing and Engineering 2 (4), 042501, 2022
112022
Neuromorphic electro-stimulation based on atomically thin semiconductor for damage-free inflammation inhibition
R Bao, S Wang, X Liu, K Tu, J Liu, X Huang, C Liu, P Zhou, S Liu
Nature Communications 15 (1), 1327, 2024
72024
Tunable Current Regulative Diode Based on Van der Waals Stacked MoS2/WSe2 Heterojunction–Channel Field‐Effect Transistor
L Liu, C Liu, X Huang, S Zeng, ZW Tang, DW Zhang, P Zhou
Advanced Electronic Materials 8 (4), 2100869, 2022
72022
Versatile logic and nonvolatile memory based on a van der Waals heterojunction
Y Sun, S Wang, S Zeng, X Huang, P Zhou
ACS Applied Electronic Materials 3 (7), 3079-3084, 2021
32021
Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering
Z Tang, C Liu, S Zeng, X Huang, L Liu, J Li, Y Jiang, DW Zhang, P Zhou
Journal of Semiconductors 42 (2), 024101, 2021
32021
Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors
Z Liu, Q Zhang, X Huang, C Liu, P Zhou
Science China Information Sciences 67 (6), 1-8, 2024
22024
A quantum corrected compact model of experimentally fabricated GAA 2-D MBCFETs
Y Liu, X Huang, K Luo, Z Wu, Y Liu, C Liu, G Hu, P Zhou, Y Lu
IEEE Transactions on Electron Devices 70 (3), 891-898, 2023
12023
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