| Phase-change random access memory: A scalable technology S Raoux, GW Burr, MJ Breitwisch, CT Rettner, YC Chen, RM Shelby, ... IBM Journal of Research and Development 52 (4.5), 465-479, 2008 | 1195 | 2008 |
| A map for phase-change materials D Lencer, M Salinga, B Grabowski, T Hickel, J Neugebauer, M Wuttig Nature materials 7 (12), 972-977, 2008 | 813 | 2008 |
| Design rules for phase‐change materials in data storage applications D Lencer, M Salinga, M Wuttig Advanced Materials 23 (18), 2030-2058, 2011 | 554 | 2011 |
| Nanosecond switching in GeTe phase change memory cells G Bruns, P Merkelbach, C Schlockermann, M Salinga, M Wuttig, TD Happ, ... Applied physics letters 95 (4), 2009 | 522 | 2009 |
| Using low-loss phase-change materials for mid-infrared antenna resonance tuning AKU Michel, DN Chigrin, TWW Maß, K Schönauer, M Salinga, M Wuttig, ... Nano letters 13 (8), 3470-3475, 2013 | 310 | 2013 |
| Physics of the switching kinetics in resistive memories S Menzel, U Böttger, M Wimmer, M Salinga Advanced functional materials 25 (40), 6306-6325, 2015 | 294 | 2015 |
| Monatomic phase change memory M Salinga, B Kersting, I Ronneberger, VP Jonnalagadda, XT Vu, ... Nature materials 17 (8), 681-685, 2018 | 265 | 2018 |
| Ultra-thin phase-change bridge memory device using GeSb YC Chen, CT Rettner, S Raoux, GW Burr, SH Chen, RM Shelby, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 258 | 2006 |
| Measurement of crystal growth velocity in a melt-quenched phase-change material M Salinga, E Carria, A Kaldenbach, M Bornhöfft, J Benke, J Mayer, ... Nature communications 4 (1), 2371, 2013 | 232 | 2013 |
| Roadmap on emerging hardware and technology for machine learning K Berggren, Q Xia, KK Likharev, DB Strukov, H Jiang, T Mikolajick, ... Nanotechnology 32 (1), 012002, 2020 | 183 | 2020 |
| Phase change materials and their application to random access memory technology S Raoux, RM Shelby, J Jordan-Sweet, B Munoz, M Salinga, YC Chen, ... Microelectronic Engineering 85 (12), 2330-2333, 2008 | 182 | 2008 |
| Threshold field of phase change memory materials measured using phase change bridge devices D Krebs, S Raoux, CT Rettner, GW Burr, M Salinga, M Wuttig Applied Physics Letters 95 (8), 2009 | 178 | 2009 |
| Nanosecond threshold switching of GeTe6 cells and their potential as selector devices M Anbarasu, M Wimmer, G Bruns, M Salinga, M Wuttig Applied Physics Letters 100 (14), 2012 | 148 | 2012 |
| Phase-change memories on a diet M Salinga, M Wuttig science 332 (6029), 543-544, 2011 | 136 | 2011 |
| Phase transitions in Ge–Sb phase change materials S Raoux, C Cabral, L Krusin-Elbaum, JL Jordan-Sweet, K Virwani, ... Journal of Applied Physics 105 (6), 2009 | 104 | 2009 |
| Effect of Al and Cu doping on the crystallization properties of the phase change materials SbTe and GeSb S Raoux, M Salinga, JL Jordan-Sweet, A Kellock Journal of Applied Physics 101 (4), 2007 | 101 | 2007 |
| Nonvolatile memory concepts based on resistive switching in inorganic materials T Mikolajick, M Salinga, M Kund, T Kever Advanced engineering materials 11 (4), 235-240, 2009 | 86 | 2009 |
| Collective structural relaxation in phase‐change memory devices M Le Gallo, D Krebs, F Zipoli, M Salinga, A Sebastian Advanced Electronic Materials 4 (9), 1700627, 2018 | 81 | 2018 |
| How fragility makes phase-change data storage robust: insights from ab initio simulations W Zhang, I Ronneberger, P Zalden, M Xu, M Salinga, M Wuttig, ... Scientific reports 4 (1), 6529, 2014 | 79 | 2014 |
| Picosecond electric-field-induced threshold switching in phase-change materials P Zalden, MJ Shu, F Chen, X Wu, Y Zhu, H Wen, S Johnston, ZX Shen, ... Physical Review Letters 117 (6), 067601, 2016 | 73 | 2016 |
