Ultrahigh-density nanowire arrays grown in self-assembled diblock copolymer templates T Thurn-Albrecht, J Schotter, GA Kastle, N Emley, T Shibauchi, ... Science 290 (5499), 2126-2129, 2000 | 2672 | 2000 |
Three-dimensional integrated circuits AW Topol, DC La Tulipe, L Shi, DJ Frank, K Bernstein, SE Steen, A Kumar, ... IBM Journal of Research and Development 50 (4.5), 491-506, 2006 | 901 | 2006 |
Stable SRAM cell design for the 32 nm node and beyond L Chang, DM Fried, J Hergenrother, JW Sleight, RH Dennard, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 128-129, 2005 | 860 | 2005 |
Polymer self assembly in semiconductor microelectronics CT Black, R Ruiz, G Breyta, JY Cheng, ME Colburn, KW Guarini, HC Kim, ... IBM Journal of Research and Development 51 (5), 605-633, 2007 | 547 | 2007 |
Integration of self-assembled diblock copolymers for semiconductor capacitor fabrication CT Black, KW Guarini, KR Milkove, SM Baker, TP Russell, MT Tuominen Applied Physics Letters 79 (3), 409-411, 2001 | 482 | 2001 |
Integration of strained Ge into advanced CMOS technology H Shang, M Ieong, JO Chu, KW Guarini US Patent 7,244,958, 2007 | 474 | 2007 |
High performance CMOS fabricated on hybrid substrate with different crystal orientations M Yang, M Ieong, L Shi, K Chan, V Chan, A Chou, E Gusev, K Jenkins, ... IEEE International Electron Devices Meeting 2003, 18.7. 1-18.7. 4, 2003 | 426 | 2003 |
Three dimensional integrated circuit SM Alam, IM Elfadel, KW Guarini, M Ieong, PN Kudva, DS Kung, MA Lavin, ... US Patent 7,312,487, 2007 | 356 | 2007 |
Enabling SOI-based assembly technology for three-dimensional (3D) integrated circuits (ICs) AW Topol, DC La Tulipe, L Shi, SM Alam, DJ Frank, SE Steen, J Vichiconti, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 353 | 2005 |
Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers V Chan, KW Guarini, M Ieong US Patent 6,821,826, 2004 | 311 | 2004 |
Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers V Chan, K Guarini, M Ieong US Patent App. 10/914,433, 2005 | 300 | 2005 |
Three dimensional integrated circuit and method of design SM Alam, IM Elfadel, KW Guarini, M Ieong, PN Kudva, DS Kung, MA Lavin, ... US Patent 7,723,207, 2010 | 266 | 2010 |
Optimization of diblock copolymer thin film self assembly KW Guarini, CT Black, SHI Yeung Advanced Materials 14 (18), 1290-1294, 2002 | 246 | 2002 |
Germanium channel MOSFETs: Opportunities and challenges H Shang, MM Frank, EP Gusev, JO Chu, SW Bedell, KW Guarini, M Ieong IBM Journal of Research and Development 50 (4.5), 377-386, 2006 | 245 | 2006 |
Nanoscale patterning using self-assembled polymers for semiconductor applications KW Guarini, CT Black, KR Milkove, RL Sandstrom Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 238 | 2001 |
Block copolymer surface reconstuction: A reversible route to nanoporous films T Xu, J Stevens, JA Villa, JT Goldbach, KW Guarini, CT Black, CJ Hawker, ... Advanced Functional Materials 13 (9), 698-702, 2003 | 231 | 2003 |
Electrical Integrity of State-of-the-Art 0.13 um SOI Device and Circuits Transferred for Three-Dimensional (3D) Integrated Circuit (IC) Fabrication KW Guarini IEDM, 2002 | 220 | 2002 |
Process integration of self-assembled polymer templates into silicon nanofabrication KW Guarini, CT Black, Y Zhang, H Kim, EM Sikorski, IV Babich Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 210 | 2002 |
Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate H Shang, KL Lee, P Kozlowski, C D'emic, I Babich, E Sikorski, M Ieong, ... IEEE Electron Device Letters 25 (3), 135-137, 2004 | 208 | 2004 |
Electrical integrity of state-of-the-art 0.13/spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication KW Guarini, AW Topol, M Ieong, R Yu, L Shi, MR Newport, DJ Frank, ... Digest. International Electron Devices Meeting,, 943-945, 2002 | 206 | 2002 |