| Leakage characterization of 10T SRAM cell A Islam, M Hasan IEEE transactions on electron devices 59 (3), 631-638, 2012 | 187 | 2012 |
| Single-Ended Schmitt-Trigger-Based Robust Low-Power SRAM Cell S Ahmad, MK Gupta, N Alam, M Hasan IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (8 …, 2016 | 166 | 2016 |
| A technique to mitigate impact of process, voltage and temperature variations on design metrics of SRAM Cell A Islam, M Hasan Microelectronics Reliability 52 (2), 405-411, 2012 | 117 | 2012 |
| Carbon nanotube field effect transistors for high performance analog applications: An optimum design approach FA Usmani, M Hasan Microelectronics Journal 41 (7), 395-402, 2010 | 91 | 2010 |
| Robust TFET SRAM cell for ultra-low power IoT applications S Ahmad, N Alam, M Hasan AEU-International Journal of Electronics and Communications 89, 70-76, 2018 | 78 | 2018 |
| Robust TFET SRAM cell for ultra-low power IoT application S Ahmad, N Alam, M Hasan 2017 International Conference on Electron Devices and Solid-State Circuits …, 2017 | 78 | 2017 |
| A novel coefficient ordering based low power pipelined radix-4 FFT processor for wireless LAN applications M Hasan, T Arslan, JS Thompson Consumer Electronics, IEEE Transactions on 49 (1), 128-134, 2003 | 76 | 2003 |
| Optimized design of a 32-nm CNFET-based low-power ultrawideband CCII A Imran, M Hasan, A Islam, SA Abbasi IEEE Transactions on Nanotechnology 11 (6), 1100-1109, 2012 | 74 | 2012 |
| Low Leakage Fully Half-Select-Free Robust SRAM Cells With BTI Reliability Analysis S Ahmad, B Iqbal, N Alam, M Hasan IEEE Transactions on Device and Materials Reliability 18 (3), 337-349, 2018 | 70 | 2018 |
| Low Leakage Single Bitline 9T (SB9T) Static Random Access Memory MH Sayeed Ahmad, Mohit Kumar Gupta, Naushad Alam Microelectronics Journal 62, 1-11, 2017 | 70 | 2017 |
| Variability aware low leakage reliable SRAM cell design technique A Islam, M Hasan Microelectronics Reliability 52 (6), 1247-1252, 2012 | 62 | 2012 |
| Pseudo differential multi-cell upset immune robust SRAM cell for ultra-low power applications S Ahmad, N Alam, M Hasan AEU-International Journal of Electronics and Communications 83, 366-375, 2018 | 59 | 2018 |
| Performance comparison of CNFET-and CMOS-based 6T SRAM cell in deep submicron AK Kureshi, M Hasan Microelectronics journal 40 (6), 979-982, 2009 | 54 | 2009 |
| High-performance low-power FFT cores W Han, AT Erdogan, T Arslan, M Hasan ETRI journal 30 (3), 451-460, 2008 | 44 | 2008 |
| Algorithmic low power FIR cores AT Erdogan, M Hasan, T Arslan IEE Proceedings-Circuits, Devices and Systems 150 (3), 155-160, 2003 | 42 | 2003 |
| TFET-Based Robust 7T SRAM Cell for Low Power Application S Ahmad, SA Ahmad, M Muqeem, N Alam, M Hasan IEEE Transactions on Electron Devices 66 (9), 3834-3840, 2019 | 41 | 2019 |
| Variation resilient subthreshold SRAM cell design technique A Islam, M Hasan, T Arslan International Journal of Electronics 99 (9), 1223-1237, 2012 | 40 | 2012 |
| Scheme for reducing size of coefficient memory in FFT processor M Hasan, T Arslan Electronics Letters 38 (4), 163-164, 2002 | 40 | 2002 |
| A delay spread based low power reconfigurable FFT processor architecture for wireless receiver M Hasan, T Arslan, JS Thompson Proceedings. 2003 International Symposium on System-on-Chip (IEEE Cat. No …, 2003 | 37 | 2003 |
| Robust High Speed Ternary Magnetic Content Addressable Memory MK Gupta, M Hasan IEEE Transactions on Electron Devices 62 (4), 1163-1169, 2015 | 32 | 2015 |
Dr. Aminul IslamAssociate Professor, Birla Institute of Technology (Deemed to be University), Mesra, Ranchi, India在 ieee.org 的电子邮件经过验证
