| Soft landing nanolaminates for advanced patterning FL Pasquale, S Swaminathan, A Lavoie, N Shamma, G Dixit US Patent 9,390,909, 2016 | 468 | 2016 |
| PECVD films for EUV lithography N Shamma, T Mountsier, D Schlosser US Patent 9,618,846, 2017 | 224 | 2017 |
| Resistivity dominated by surface scattering in sub-50 nm Cu wires RL Graham, GB Alers, T Mountsier, N Shamma, S Dhuey, S Cabrini, ... Applied Physics Letters 96 (4), 2010 | 164 | 2010 |
| Etching substrates using ale and selective deposition S Tan, J Yu, R Wise, N Shamma, Y Pan US Patent 10,269,566, 2019 | 137 | 2019 |
| Method for forming a mask by etching conformal film on patterned ashable hardmask N Shamma, B Van Schravendijk, S Reddy, C Ji US Patent 9,362,133, 2016 | 122 | 2016 |
| Method of making a mask for proximity effect correction in projection lithography F Sporon-Fiedler, N Shamma, E Lin US Patent 5,208,124, 1993 | 71 | 1993 |
| PECVD films for EUV lithography N Shamma, T Mountsier, D Schlosser US Patent 9,304,396, 2016 | 47 | 2016 |
| Low roughness EUV lithography R Wise, N Shamma US Patent 9,922,839, 2018 | 44 | 2018 |
| Measurement of thin film properties using plasmons D Smith, B Imani, N Shamma, P Maxton, M Brongersma US Patent App. 10/888,555, 2005 | 37 | 2005 |
| Tin oxide films in semiconductor device manufacturing J Yu, S Tan, Y Jiang, HJ Wu, R Wise, Y Pan, N Shamma, B Volosskiy US Patent 10,546,748, 2020 | 35 | 2020 |
| Eliminating yield impact of stochastics in lithography N Shamma, R Wise, J Yu, S Tan US Patent 10,796,912, 2020 | 25 | 2020 |
| A method for correction of proximity effect in optical projection lithography N Shamma, F Sporon-Fiedler, E Lin SPIE milestone series 178, 309-320, 2004 | 21 | 2004 |
| Laser and e-beam mask-to-silicon with inverse lithography technology L Pang, N Shamma, P Rissman, D Abrams 25th Annual BACUS Symposium on Photomask Technology 5992, 659-669, 2005 | 19 | 2005 |
| Soft landing nanolaminates for advanced patterning FL Pasquale, S Swaminathan, A Lavoie, N Shamma, GA Dixit US Patent 9,905,423, 2018 | 18 | 2018 |
| Patterning with amorphous carbon thin films GA Antonelli, S Reddy, P Subramonium, J Henri, J Sims, J O'loughlin, ... ECS Transactions 35 (4), 701, 2011 | 15 | 2011 |
| Application of dosemapper for 65-nm gate CD control: Strategies and results N Jeewakhan, N Shamma, SJ Choi, R Alvarez, DH Son, M Nakamura, ... Photomask Technology 2006 6349, 114-124, 2006 | 15 | 2006 |
| Integrated approach to improving local CD uniformity in EUV patterning A Liang, J Hermans, T Tran, K Viatkina, CW Liang, B Ward, S Chuang, ... Extreme Ultraviolet (EUV) Lithography VIII 10143, 251-265, 2017 | 14 | 2017 |
| Tin oxide films in semiconductor device manufacturing J Yu, SSH Tan, Y Jiang, HJ Wu, R Wise, Y Pan, N Shamma, B Volosskiy US Patent 11,322,351, 2022 | 11 | 2022 |
| Etching substrates using ALE and selective deposition S Tan, J Yu, R Wise, N Shamma, Y Pan US Patent 10,685,836, 2020 | 11 | 2020 |
| Image reversal with AHM gap fill for multiple patterning N Shamma, BJ Van Schravendijk, SK Reddy, C Ji US Patent 10,192,759, 2019 | 10 | 2019 |
