| A New Oxide-Trap Based on Charge-Pumping (OTCP) Extraction Method for Irradiated MOSFET Devices: Part II (Low Frequencies) B Djezzar, A Smatti, S Oussalah IEEE TRANSACTIONS ON NUCLEAR SCIENCE, DOI: 10.1109/TNS.2004.832547 51 (4 …, 2004 | 52 | 2004 |
| Channel-length impact on radiation-induced threshold-voltage shift in N-MOSFET devices at low gamma ray radiation doses B Djezzar, A Smatti, A Amrouche, M Kechouane IEEE Transactions on Nuclear Science, DOI: 10.1109/23.914462 47 (6), 1872-1878, 2000 | 44 | 2000 |
| A New Oxide-Trap Based on Charge Pumping (OTCP) Extraction Method for Irradiated MOSFET Devices: Part I (High Frequencies) B Djezzar, S Ossalah, A Smatti IEEE Transactions on Nuclear Science, DOI: 10.1109/TNS.2004.832549 51 (4 …, 2004 | 41 | 2004 |
| Ionizing Radiation Effects and Applications B Djezzar Publisher: InTech, ISBN 978-953-51-3954-6, Print ISBN 978-953-51-3953-9, DOI …, 2018 | 35 | 2018 |
| A propagation concept of negative bias temperature instability along the channel length in p-type metal oxide field effect transistor B Djezzar, H Tahi, A Benabdelmoumene, A Chenouf Solid-state electronics, DOI: 10.1016/j.sse.2013.01.005 82, 46-53, 2013 | 31 | 2013 |
| Why is oxide-trap charge-pumping method appropriate for radiation-induced trap depiction in MOSFET? B Djezzar, H Tahi, A Mokrani IEEE Transactions on Device and Materials Reliability, DOI: 10.1109/TDMR …, 2009 | 31 | 2009 |
| Experimental investigation of NBTI degradation in power VDMOS transistors under low magnetic field H Tahi, C Tahanout, M Boubaaya, B Djezzar, SM Merah, B Nadji, ... IEEE Transactions on Device and Materials Reliability, DOI: 10.1109/TDMR …, 2017 | 27 | 2017 |
| A comparative study of different contact resistance test structures dedicated to the power process technology S Oussalah, B Djezzar, R Jerisian Solid-state electronics, DOI: 10.1016/j.sse.2005.08.004 49 (10), 1617-1622, 2005 | 23 | 2005 |
| Recovery investigation of NBTI-induced traps in n-MOSFET devices B Djezzar, A Benabdelmoumene, B Zatout, D Messaoud, A Chenouf, ... Microelectronics Reliability, DOI: 10.1016/j.microrel.2020.113703 110 (7 …, 2020 | 21 | 2020 |
| Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique H Tahi, B Djezzar, A Benabdelmoumene, A Chenouf, M Goudjil Microelectronics Reliability, DOI: 10.1016/j.microrel.2014.01.010 54 (5 …, 2014 | 21 | 2014 |
| A new procedure for eliminating the geometric component from charge pumping: Application for NBTI and radiation issues H Tahi, B Djezzar, A Benabdelmoumene Microelectronics Reliability, DOI: 10.1016/j.microrel.2012.12.001 53 (4 …, 2013 | 18 | 2013 |
| Electrical Characterization of Oxide and Si/SiO2 Interface of Irradiated NMOS Transistor at Low Radiation Doses B Djezzar, A Amrouche, A Smatti, K Mohamed IEEE Transaction on Nuclear Science, DOI: 10.1109/23.790686 46 (04), 829-833, 1999 | 18 | 1999 |
| Field Acceleration Model for TDDB: Still a Valid Tool to Study the Reliability of Thick -Based Dielectric Layers? S Oussalah, B Djezzar IEEE Transactions on Electron Devices, DOI: 10.1109/TED.2007.899424 54 (7 …, 2007 | 16 | 2007 |
| Analysis of NBTI Degradation in nMOS-Capacitors and nMOSFETs A Benabdelmoumene, B Djezzar, A Chenouf, B Zatout, M Kechouane IEEE Transactions on Device and Materials Reliability, DOI: 10.1109/TDMR …, 2018 | 15 | 2018 |
| On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices B Djezzar, H Tahi, A Benabdelmoumene, A Chenouf, M Goudjil, Y Kribes Solid-State Electronics, DOI: 10.1016/j.sse.2015.01.001 106, 54-62, 2015 | 15 | 2015 |
| A new method for negative bias temperature instability assessment in P-channel metal oxide semiconductor transistors B Djezzar, H Tahi, A Benabdelmoumene, A Chenouf, Y Kribes Japanese Journal of Applied Physics, DOI: 10.7567/JJAP.51.116602 51 (11R …, 2012 | 15 | 2012 |
| Radiation effect evaluation in effective short and narrow channels of LDD transistor with LOCOS isolation using OTCP method H Tahi, B Djezzar, B Nadji IEEE Transactions on Device and Materials Reliability, DOI: 10.1109/TDMR …, 2010 | 15 | 2010 |
| Using oxide-trap charge-pumping method in radiation-reliability analysis of short lightly doped drain transistor B Djezzar, H Tahi IEEE Transactions on Device and Materials Reliability, DOI: 10.1109/TDMR …, 2010 | 15 | 2010 |
| On the correlation between radiation-induced oxide-and border-trap effects in the gate-oxide nMOSFET’s B Djezzar Microelectronics Reliability, DOI: 10.1016/S0026-2714(02)00242-1 42 (12 …, 2002 | 15 | 2002 |
| On the turn-around phenomenon in n-MOS transistors under NBTI conditions A Benabdelmoumene, B Djezzar, A Chenouf, H Tahi, B Zatout, ... Solid-State Electronics, DOI: 10.1016/j.sse.2016.04.001 121, 34-40, 2016 | 14 | 2016 |
Dr. Hakim TAHICentre de développement des technologies avancées在 cdta.dz 的电子邮件经过验证
