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Lakmal C. Kalutarage
Lakmal C. Kalutarage
Process Chemist, Applied Materials
在 amat.com 的电子邮件经过验证
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引用次数
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Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films
CH Winter, LC Kalutarage
US Patent 9,758,866, 2017
3292017
Synthesis And Characterization Of First Row Transition Metal Complexes Containing a-Imino Alkoxides As Precursors For Deposition Of Metal Films
CH Winter, LC Kalutarage
US Patent App. 13/765,981, 2014
329*2014
Methods Of Depositing Flowable Films Comprising SiO and SiN
L Kalutarage, M Saly, D Thompson
US Patent App. 15/297,262, 2017
3102017
Deposition Of Flowable Silicon-Containing Films
LC Kalutarage, M Saly, D Thompson, AB Mallick, T Ashok, P Manna
US Patent App. 15/654,185, 2018
304*2018
Precursors and chemistry for the atomic layer deposition of metallic first row transition metal films
TJ Knisley, LC Kalutarage, CH Winter
Coordination Chemistry Reviews 257 (23-24), 3222-3231, 2013
1692013
Low-Temperature Atomic Layer Deposition of Copper Films Using Borane Dimethylamine as the Reducing Co-reagent
LC Kalutarage, SB Clendenning, CH Winter
Chemistry of Materials 26 (12), 3731-3738, 2014
902014
Volatile and Thermally Stable Mid to Late Transition Metal Complexes Containing α-Imino Alkoxide Ligands, a New Strongly Reducing Coreagent, and Thermal Atomic Layer Deposition …
LC Kalutarage, PD Martin, MJ Heeg, CH Winter
Journal of the American Chemical Society 135 (34), 12588-12591, 2013
772013
Synthesis, Structure, and Solution Reduction Reactions of Volatile and Thermally Stable Mid to Late First Row Transition Metal Complexes Containing Hydrazonate Ligands
LC Kalutarage, PD Martin, MJ Heeg, CH Winter
Inorganic chemistry 52 (9), 5385-5394, 2013
212013
Metallic materials deposition: metal‐organic precursors
CH Winter, TJ Knisley, LC Kalutarage, MA Zavada, JP Klesko, ...
Encyclopedia of Inorganic and Bioinorganic Chemistry, 2011
212011
Low temperature molecular layer deposition of SiCON
M Saly, D Thompson, L Kalutarage
US Patent 9,812,318, 2017
192017
Low Temperature Molecular Layer Deposition Of SiCON
M Saly, D Thompson, L Kalutarage
US Patent App. 14/801,215, 2016
192016
Volatility and High Thermal Stability in Mid-to-Late First-Row Transition-Metal Complexes Containing 1, 2, 5-Triazapentadienyl Ligands
LC Kalutarage, MJ Heeg, PD Martin, MJ Saly, DS Kuiper, CH Winter
Inorganic chemistry 52 (3), 1182-1184, 2013
182013
Manganese Precursor Selection and the Thermal Atomic Layer Deposition of Copper/Manganese Alloy Films
LC Kalutarage, SB Clendenning, CH Winter
ECS Transactions 64 (9), 147-157, 2014
152014
Synthesis and characterization of first row transition metal complexes containing α-keto hydrazonate ligands as potential precursors for use in metal film deposition
CH Winter, LC Kalutarage
US Patent 8,907,115, 2014
32014
Synthesis and Characterization of First Row Transition Metal Complexes Containing alpha-keto Hydrazonate Ligands as Potential Precursors for Use in Metal Film Deposition
CH Winter, LC Kalutarage
US Patent App. 13/709,564, 2014
32014
Chemical Infiltration into Porous Dielectric Films
L Kalutarage, M Saly, D Thompson
US Patent App. 15/299,708, 2017
22017
Methods and Apparatus for Depositing Yttrium-Containing Films
LC Kalutarage, M Saly, T Knisley, B Schmiege, D Thompson
US Patent App. 15/649,584, 2019
2019
Low Temperature Molecular Layer Deposition Of SiCON
M Saly, D Thompson, LC Kalutarage
US Patent App. 15/804,503, 2018
2018
Precursors for Atomic Layer Deposition
CH Winter, LC Kalutarage
US Patent App. 14/407,238, 2015
2015
Precursors And Processes For The Growth Of Metallic First Row Transition Metal Films By Atomic Layer Deposition
LC Kalutarage
2014
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