| Ultimately thin double-gate SOI MOSFETs T Ernst, S Cristoloveanu, G Ghibaudo, T Ouisse, S Horiguchi, Y Ono, ... IEEE transactions on electron devices 50 (3), 830-838, 2003 | 299 | 2003 |
| Silicon single-electron devices Y Takahashi, Y Ono, A Fujiwara, H Inokawa Journal of physics: Condensed matter 14 (39), R995, 2002 | 235 | 2002 |
| Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor A Fujiwara, K Nishiguchi, Y Ono Applied Physics Letters 92 (4), 2008 | 217 | 2008 |
| Valley polarization in Si (100) at zero magnetic field K Takashina, Y Ono, A Fujiwara, Y Takahashi, Y Hirayama Physical review letters 96 (23), 236801, 2006 | 178 | 2006 |
| Pauli-spin-blockade transport through a silicon double quantum dot HW Liu, T Fujisawa, Y Ono, H Inokawa, A Fujiwara, K Takashina, ... Physical Review B—Condensed Matter and Materials Physics 77 (7), 073310, 2008 | 172 | 2008 |
| Manipulation and detection of single electrons for future information processing Y Ono, A Fujiwara, K Nishiguchi, H Inokawa, Y Takahashi Journal of Applied Physics 97 (3), 2005 | 168 | 2005 |
| Fabrication method for IC-oriented Si single-electron transistors Y Ono, Y Takahashi, K Yamazaki, M Nagase, H Namatsu, K Kurihara, ... IEEE Transactions on Electron Devices 47 (1), 147-153, 2000 | 151 | 2000 |
| Current quantization due to single-electron transfer in Si-wire charge-coupled devices A Fujiwara, NM Zimmerman, Y Ono, Y Takahashi Applied physics letters 84 (8), 1323-1325, 2004 | 146 | 2004 |
| Conductance modulation by individual acceptors in Si nanoscale field-effect transistors Y Ono, K Nishiguchi, A Fujiwara, H Yamaguchi, H Inokawa, Y Takahashi Applied Physics Letters 90 (10), 2007 | 145 | 2007 |
| Single-electron transport through single dopants in a dopant-rich environment M Tabe, D Moraru, M Ligowski, M Anwar, R Jablonski, Y Ono, T Mizuno Physical review letters 105 (1), 016803, 2010 | 132 | 2010 |
| Si complementary single-electron inverter with voltage gain Y Ono, Y Takahashi, K Yamazaki, M Nagase, H Namatsu, K Kurihara, ... Applied Physics Letters 76 (21), 3121-3123, 2000 | 129 | 2000 |
| Photoluminescence from a silicon quantum well formed on separation by implanted oxygen substrate Y Takahashi, T Furuta, Y Ono, T Ishiyama, MTM Tabe Japanese journal of applied physics 34 (2S), 950, 1995 | 116 | 1995 |
| Metal− semiconductor transition in single-walled carbon nanotubes induced by low-energy electron irradiation A Vijayaraghavan, K Kanzaki, S Suzuki, Y Kobayashi, H Inokawa, Y Ono, ... Nano letters 5 (8), 1575-1579, 2005 | 106 | 2005 |
| Scanning-tunneling-microscopy observation of thermal oxide growth on Si (111) 7× 7 surfaces Y Ono, M Tabe, H Kageshima Physical Review B 48 (19), 14291, 1993 | 97 | 1993 |
| Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires D Moraru, Y Ono, H Inokawa, M Tabe Physical Review B—Condensed Matter and Materials Physics 76 (7), 075332, 2007 | 87 | 2007 |
| Electron pump by a combined single-electron/field-effect-transistor structure Y Ono, Y Takahashi Applied physics letters 82 (8), 1221-1223, 2003 | 86 | 2003 |
| Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology K Nishiguchi, A Fujiwara, Y Ono, H Inokawa, Y Takahashi Applied physics letters 88 (18), 2006 | 84 | 2006 |
| Binary adders of multigate single-electron transistors: Specific design using pass-transistor logic Y Ono, H Inokawa, Y Takahashi IEEE Transactions on nanotechnology 1 (2), 93-99, 2002 | 76 | 2002 |
| Thermal agglomeration of single-crystalline Si layer on buried in ultrahigh vacuum R Nuryadi, Y Ishikawa, Y Ono, M Tabe Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 75 | 2002 |
| Thermal agglomeration of thin single crystal Si on SiO2 in vacuum Y Ono, M Nagase, MTM Tabe, YTY Takahashi Japanese journal of applied physics 34 (4R), 1728, 1995 | 64 | 1995 |
Akira FujiwaraNTT在 lab.ntt.co.jp 的电子邮件经过验证
