| Noise behavior of ferro electric tunnel FET B Das, B Bhowmick Microelectronics Journal 96, 104677, 2020 | 32 | 2020 |
| Effect of curie temperature on ferroelectric tunnel FET and its RF/analog performance B Das, B Bhowmick IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 68 …, 2020 | 28 | 2020 |
| Dielectrically modulated ferroelectric-TFET (Ferro-TFET) based biosensors B Das, B Bhowmick Materials Science and Engineering: B 298, 116841, 2023 | 10 | 2023 |
| A 4 bit quantum voltage comparator based flash ADC for low noise applications T Kalita, B Das 2016 Conference on Emerging Devices and Smart Systems (ICEDSS), 24-29, 2016 | 7 | 2016 |
| Impact of traps on DC, analog/RF, and linearity performance of Ferro-TFET B Das, B Bhowmick Silicon 15 (5), 2359-2369, 2023 | 4 | 2023 |
| A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT B Das, R Goswami, B Bhowmick Pramana 86, 723-736, 2016 | 4 | 2016 |
| Effect of noise and temperature on the performance of ferro-tunnel FET B Das, B Bhowmick Contemporary Trends in Semiconductor Devices: Theory, Experiment and …, 2022 | 3 | 2022 |
| An improved TIQ comparator based 3-bit flash ADC J Talukdar, B Das 2017 1st International Conference on Electronics, Materials Engineering and …, 2017 | 3 | 2017 |
| Behavior of Transmission Probability in a Single Rectangular Potential Barrier at Constant Barrier Height–Barrier Width Product R Goswami, B Das The International Journal of Engineering and Science 1 (1), 2012 | 3 | 2012 |
| Source engineered TFET for digital inverters application J Talukdar, B Das, G Rawat, K Mummaneni Physica Scripta 99 (4), 045026, 2024 | | 2024 |
| A Detailed Review on Growth and Evolution of TFET Biosensor for Biosensing Application B Das, H Borah, B Bhowmick Handbook of Emerging Materials for Semiconductor Industry, 633-655, 2024 | | 2024 |
| Sensitivity analysis of Non-uniform TFET with dual material source-based biosensor J Talukdar, M Malvika, B Das, K Mummaneni 2022 IEEE International Symposium on Smart Electronic Systems (iSES), 597-600, 2022 | | 2022 |
| GaN channel Nanoscale MOSFET with silicon source and Drain and Silicon Germanium Bulk B Das National conference on Recent Innovative Trends in Engineering and Technology, 2016 | | 2016 |
| A Mathematical Model and an Algorithm for Transmission in Single Rectangular Potential Barriers RGBD B.Bhowmick International Journal of Pure and Applied Mathematics 101 (5), 605-615, 2015 | | 2015 |
| Study of Some Properties of Squares of Whole Numbers R Goswami, PK De, B Das International Journal of Computer Applications 112 (16), 2015 | | 2015 |
| AlGaN/ GaN nanoscale HEMT with Arc shaped gate and stacked HfO2-SiO2gate dielectric B Das, B Bhowmick 2014 International Conference on Green Computing Communication and …, 2014 | | 2014 |
| An Optimized SOI g-TFET and its application in a Half Adder Circuit CJ B.Bhowmick, S.Baishya, R.Goswami, B.Das IEEE International Conference on Devices, Circuits and Systems, 2014 | | 2014 |
| A single gate nanoscale n-channel Silicon MOSFET with gate overlap Silicon Germanium region for improved Ion/Ioff ratio BBSH R.Goswami, B.Das IEEE International Conference on Circuit, Power and Computing Technologies, 2014 | | 2014 |
| Arc shaped gate nanoscale AlGaN/GaN HEMT with high-k gate dielectric BDB Bhowmick International Conference on Recent Trends in Engineering & Technology, 2014 | | 2014 |
| Simulation Study of Gate Dielectric for Arc-Shaped Gate MOSHEMT B Das, B Bhowmick International Conference on Recent Trends in Engineering Sciences’, 2014 | | 2014 |
Dr. BRINDA BHOWMICKProfessor, NIT Silchar在 ece.nits.ac.in 的电子邮件经过验证
