| Spatially resolving valley quantum interference of a donor in silicon J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ... Nature materials 13 (6), 605, 2014 | 120 | 2014 |
| Quantum simulation of the Hubbard model with dopant atoms in silicon J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ... Nature communications 7, 11342, 2016 | 114 | 2016 |
| Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection J Salfi, U Philipose, CF De Sousa, S Aouba, HE Ruda Applied physics letters 89 (26), 2006 | 92 | 2006 |
| Transport and strain relaxation in wurtzite InAs–GaAs core-shell heterowires KL Kavanagh, J Salfi, I Savelyev, M Blumin, HE Ruda Applied Physics Letters 98 (15), 2011 | 78 | 2011 |
| Direct observation of single-charge-detection capability of nanowire field-effect transistors J Salfi, IG Savelyev, M Blumin, SV Nair, HE Ruda Nature nanotechnology 5 (10), 737-741, 2010 | 76 | 2010 |
| Roadmap on quantum nanotechnologies A Laucht, F Hohls, N Ubbelohde, MF Gonzalez-Zalba, DJ Reilly, S Stobbe, ... Nanotechnology 32 (16), 162003, 2021 | 74 | 2021 |
| Engineering long spin coherence times of spin–orbit qubits in silicon T Kobayashi, J Salfi, C Chua, J Van Der Heijden, MG House, D Culcer, ... Nature Materials 20 (1), 38-42, 2021 | 71 | 2021 |
| Spatial metrology of dopants in silicon with exact lattice site precision M Usman, J Bocquel, J Salfi, B Voisin, A Tankasala, R Rahman, ... Nature nanotechnology 11 (9), 763-768, 2016 | 64 | 2016 |
| Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits Z Wang, E Marcellina, AR Hamilton, JH Cullen, S Rogge, J Salfi, D Culcer npj Quantum Information 7 (1), 54, 2021 | 61* | 2021 |
| Charge-insensitive single-atom spin-orbit qubit in silicon J Salfi, JA Mol, D Culcer, S Rogge Physical review letters 116 (24), 246801, 2016 | 61 | 2016 |
| Quantum computing with acceptor spins in silicon J Salfi, M Tong, S Rogge, D Culcer Nanotechnology 27 (24), 244001, 2016 | 52 | 2016 |
| Probing the spin states of a single acceptor atom J Van der Heijden, J Salfi, JA Mol, J Verduijn, GC Tettamanzi, ... Nano letters 14 (3), 1492-1496, 2014 | 52 | 2014 |
| Electronic properties of quantum dot systems realized in semiconductor nanowires J Salfi, S Roddaro, D Ercolani, L Sorba, I Savelyev, M Blumin, HE Ruda, ... Semiconductor Science and Technology 25 (2), 024007, 2010 | 47 | 2010 |
| Quantum computing with acceptor-based qubits S Rogge, J Salfi, JA Mol US Patent 9,691,033, 2017 | 41 | 2017 |
| Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition Z Li, J Salfi, C De Souza, P Sun, SV Nair, HE Ruda Applied Physics Letters 97 (6), 2010 | 37 | 2010 |
| Valley interference and spin exchange at the atomic scale in silicon B Voisin, J Bocquel, A Tankasala, M Usman, J Salfi, R Rahman, ... Nature communications 11 (1), 6124, 2020 | 31 | 2020 |
| Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor J van der Heijden, T Kobayashi, MG House, J Salfi, S Barraud, ... Science advances 4 (12), eaat9199, 2018 | 30 | 2018 |
| Interplay between quantum confinement and dielectric mismatch for ultrashallow dopants JA Mol, J Salfi, JA Miwa, MY Simmons, S Rogge Physical Review B 87 (24), 245417, 2013 | 29 | 2013 |
| Probing the gate− voltage-dependent surface potential of individual InAs nanowires using random telegraph signals J Salfi, N Paradiso, S Roddaro, S Heun, SV Nair, IG Savelyev, M Blumin, ... ACS nano 5 (3), 2191-2199, 2011 | 29 | 2011 |
| Spatially resolved resonant tunneling on single atoms in silicon B Voisin, J Salfi, J Bocquel, R Rahman, S Rogge Journal of Physics: Condensed Matter 27 (15), 154203, 2015 | 28 | 2015 |
Sven RoggeProfessor of Physics, University of New South Wales在 unsw.edu.au 的电子邮件经过验证
