Optoelectronic performance variations in InGaN/GaN multiple-quantum-well light-emitting diodes: effects of potential fluctuation ABMH Islam, JI Shim, DS Shin Materials 11 (5), 743, 2018 | 24 | 2018 |
Impact of grain growth of silver reflective electrode by electron bombardment on external quantum efficiency of III-nitride micro-light-emitting diode arrays IY Hong, ABMH Islam, TK Kim, YJ Cha, JS Kwak Applied surface science 512, 145698, 2020 | 21 | 2020 |
Enhanced radiative recombination rate by local potential fluctuation in InGaN/AlGaN near-ultraviolet light-emitting diodes ABMH Islam, DS Shim, JI Shim Applied Sciences 9 (5), 871, 2019 | 18 | 2019 |
Improvement of Ti/Al ohmic contacts on N-face n-type GaN by using O2 plasma treatment H Seo, YJ Cha, ABMH Islam, JS Kwak Applied Surface Science 510, 145180, 2020 | 15 | 2020 |
Dimension-and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications D Yoo, K Lee, Y Tchoe, P Guha, A Ali, RK Saroj, S Lee, ABMH Islam, ... Scientific Reports 11 (1), 17524, 2021 | 13 | 2021 |
Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky … JH Lee, ABMH Islam, TK Kim, YJ Cha, JS Kwak Photonics Research 8 (6), 1049-1058, 2020 | 13 | 2020 |
Generation of sidewall defects in InGaN/GaN blue micro-LEDs under forward-current stress ABMH Islam, TK Kim, DS Shin, JI Shim, JS Kwak Applied Physics Letters 121 (1), 2022 | 10 | 2022 |
Interactive study of electroreflectance and photocurrent spectra in InGaN/GaN-based blue LEDs ABMH Islam, DS Shin, JI Shim IEEE Journal of Quantum Electronics 53 (5), 1-6, 2017 | 10 | 2017 |
32× 32 pixelated high-power flip-chip blue micro-LED-on-HFET arrays for submarine optical communication TK Kim, ABMH Islam, YJ Cha, JS Kwak Nanomaterials 11 (11), 3045, 2021 | 8 | 2021 |
Measurement of the piezoelectric field in InGaN/AlGaN multiple‐quantum‐well near‐ultraviolet light‐emitting diodes by electroreflectance spectroscopy ABMH Islam, JI Shim, DS Shin IEEE J. Quant. Electron 55 (5), 3200307-1, 2019 | 7 | 2019 |
Piezoelectric field in InGaN-based quantum wells grown on c-plane sapphire substrates measured by electroreflectance spectroscopy: from near-ultraviolet to green spectra ABMH Islam, JI Shim, DS Shin Japanese Journal of Applied Physics 59 (3), 038001, 2020 | 6 | 2020 |
Nonpolar GaN-based nanopillar green Light-Emitting Diode (Led) fabricated by using self-aligned In3Sn nanodots MJ Park, ABMH Islam, YJ Cha, JS Kwak Applied Surface Science 536, 147865, 2021 | 5 | 2021 |
Effect of Defects on Strain Relaxation in InGaN/AlGaN Multiple‐Quantum‐Well Near‐Ultraviolet Light‐Emitting Diodes ABMH Islam, JI Shim, DS Shin, JS Kwak physica status solidi (a) 219 (2), 2100418, 2022 | 3 | 2022 |
Temperature-dependent efficiency droop in GaN-based blue micro light-emitting diodes ABMH Islam, TK Kim, YJ Cha, DS Shin, JI Shim, JS Kwak ECS Journal of Solid State Science and Technology 12 (12), 125002, 2023 | 2 | 2023 |
Very low input voltage cascaded travelling wave electroabsorption modulator (CTWEAM) for more than 100 Gbps ABMH Islam, U Westergren Optics Communications 297, 43-47, 2013 | 2 | 2013 |
Demonstration of Efficient Ultrathin Side-Emitting InGaN/GaN Flip-Chip Light-Emitting Diodes by Double Side Reflectors TK Kim, ABMH Islam, YJ Cha, SH Oh, JS Kwak Nanomaterials 12 (8), 1342, 2022 | 1 | 2022 |
Temperature-Induced Stress Performance of High-Density GaN Micro-LED Arrays for Industrial Mass Production EJ Youn, TK Kim, ABMH Islam, J Kim, EK Chu, Y Shin, SH Jung, YS Choi, ... ACS Applied Electronic Materials 6 (12), 8819-8827, 2024 | | 2024 |
Determining the Turn-On Voltage of GaN-Based Light-Emitting Diodes: From Near-Ultraviolet to Green Spectra ABMH Islam, DS Shin, JS Kwak, JI Shim ECS Journal of Solid State Science and Technology 12 (12), 126001, 2023 | | 2023 |
Precise performances of InGaN/GaN-based sidewall emitted light-emitting diodes for ultrathin backlight unit TK Kim, ABMH Islam, YJ Cha, JW Seo, JS Kwak Gallium Nitride Materials and Devices XVII, PC120011M, 2022 | | 2022 |
Demonstration of Efficient Ultrathin Side-Emitting InGaN/GaN Flip-Chip Light-Emitting Diodes by Double Side Reflectors. Nanomaterials 2022, 12, 1342 TK Kim, A Islam, YJ Cha, SH Oh, JS Kwak s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2022 | | 2022 |