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Giacomo Cappellini
Giacomo Cappellini
Electronic Engineer in STMicroelectronics
在 studenti.unimore.it 的电子邮件经过验证
标题
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Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies
G Giorgino, M Cioni, C Miccoli, L Gervasi, MFS Giuffrida, M Ruvolo, ...
e-Prime-Advances in Electrical Engineering, Electronics and Energy 6, 100338, 2023
22023
On-Wafer RON Degradation Analysis of 100 V p-GaN HEMTs Emulating Low- and High-Side Operation in Half Bridge Circuits
L Modica, N Zagni, D Orlandini, M Cioni, G Cappellini, ME Castagna, ...
2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2024
12024
Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs
M Cioni, G Giorgino, A Chini, A Parisi, G Cappellini, C Miccoli, ...
Electronic Materials 5 (3), 132-144, 2024
12024
Impact of Gate and Drain Leakage on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs
M Cioni, G Giorgino, A Chini, A Parisi, G Cappellini, L Modica, G Luongo, ...
2023 AEIT International Conference on Electrical and Electronic Technologies …, 2023
12023
RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits
N Zagni, L Modica, M Cioni, G Cappellini, ME Castagna, G Giorgino, ...
2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2024
2024
Preliminary Evaluation of PBTI and Back-Effect interplay in 100 V p-GaN gate AlGaN/GaN HEMTs
G Cappellini, M Cioni, G Giorgino, A Chini, N Zagni, L Modica, G Luongo, ...
2024 15th International Conference on Advanced Semiconductor Devices and …, 2024
2024
On the dynamic RON, vertical leakage and capacitance behavior in pGaN HEMTs with heavily carbon-doped buffers
M Cioni, A Chini, N Zagni, G Verzellesi, G Giorgino, G Cappellini, ...
IEEE Electron Device Letters, 2024
2024
A novel measurement custom setup for on-wafer dynamic characterization of GaN HEMTs devices for power applications.
G CAPPELLINI
2023
Temperature Effect on RON-degradation induced by Off-state Drain Voltage Stress
M Cioni, G Giorgino, G Cappellini, A Chini, C Miccoli, ME Castagna, ...
Proc. of 46th Workshop on Compound Semiconductor Devices and Integrated …, 2023
2023
Improved High Temperature Behaviour of On-Resistance in 100V p-GaN HEMTs
G Giorgino, M Cioni, G Cappellini, F Iucolano, C Miccoli, ME Castagna, ...
Proc. of 46th Workshop on Compound Semiconductor Devices and Integrated …, 2023
2023
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