| Prospects for SiC electronics and sensors NG Wright, AB Horsfall, K Vassilevski Materials today 11 (1-2), 16-21, 2008 | 247 | 2008 |
| Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide IP Nikitina, KV Vassilevski, NG Wright, AB Horsfall, AG O’Neill, ... Journal of Applied Physics 97 (8), 2005 | 201 | 2005 |
| The sinusoidal probe: a new approach to improve electrode longevity HS Sohal, A Jackson, R Jackson, GJ Clowry, K Vassilevski, A O’Neill, ... Frontiers in neuroengineering 7, 10, 2014 | 122 | 2014 |
| Cathodoluminescence and transmission electron microscopy study of the influence of crystal defects on optical transitions in GaN G Salviati, M Albrecht, C Zanotti‐Fregonara, N Armani, M Mayer, ... physica status solidi (a) 171 (1), 325-339, 1999 | 117 | 1999 |
| Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing KV Vassilevski, NG Wright, IP Nikitina, AB Horsfall, AG O'neill, MJ Uren, ... Semiconductor Science and Technology 20 (3), 271, 2005 | 95 | 2005 |
| Physical properties of bulk GaN crystals grown by HVPE YV Melnik, KV Vassilevski, IP Nikitina, AI Babanin, VY Davydov, ... MRS Internet Journal of Nitride Semiconductor Research 2, 1-9, 1997 | 83 | 1997 |
| III-V compounds semiconductor device with an AlxByInzGa1-xy-zN non continuous quantum dot layer AE Nikolaev, YV Melnik, KV Vassilevski, VA Dmitriev US Patent 6,479,839, 2002 | 76 | 2002 |
| Properties of free-standing GaN bulk crystals grown by HVPE Y Melnik, A Nikolaev, I Nikitina, K Vassilevski, V Dmitriev MRS Online Proceedings Library (OPL) 482, 269, 1997 | 69 | 1997 |
| Experimental determination of electron drift velocity in 4H-SiC p/sup+/-nn/sup+/avalanche diodes KV Vassilevski, K Zekentes, AV Zorenko, LP Romanov IEEE Electron Device Letters 21 (10), 485-487, 2000 | 67 | 2000 |
| Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC K Vassilevski, K Zekentes, K Tsagaraki, G Constantinidis, I Nikitina Materials Science and Engineering: B 80 (1-3), 370-373, 2001 | 55 | 2001 |
| Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide K Zekentes, KV Vassilievski US Patent 6,599,644, 2003 | 54 | 2003 |
| 4H-SiC IMPATT diode fabrication and testing K Vassilevski, AV Zorenko, K Zekentes, K Tsagaraki, E Bano, C Banc, ... Materials Science Forum 389, 1353-1358, 2002 | 51 | 2002 |
| High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension K Vassilevski, I Nikitina, A Horsfall, NG Wright, AG O'Neill, KP Hilton, ... Materials Science Forum 556557, 873-876, 2007 | 43 | 2007 |
| Device processing and characterisation of high temperature silicon carbide Schottky diodes KV Vassilevski, IP Nikitina, NG Wright, AB Horsfall, AG O’Neill, ... Microelectronic engineering 83 (1), 150-154, 2006 | 41 | 2006 |
| III-V compound semiconductor device with an AlxByInzGa1-xy-zN1-a-bPaAsb non-continuous quantum dot layer AE Nikolaev, YV Melnik, KV Vassilevski, VA Dmitriev US Patent 6,849,862, 2005 | 40 | 2005 |
| Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO2 / Al2O3 Gate Stack F Arith, J Urresti, K Vasilevskiy, S Olsen, N Wright, A O’Neill IEEE Electron Device Letters 39 (4), 564-567, 2018 | 38 | 2018 |
| Semi-transparent SiC Schottky diodes for X-ray spectroscopy JE Lees, DJ Bassford, GW Fraser, AB Horsfall, KV Vassilevski, NG Wright, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2007 | 37 | 2007 |
| Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon E Escobedo-Cousin, K Vassilevski, T Hopf, N Wright, A O'Neill, A Horsfall, ... Journal of Applied Physics 113 (11), 2013 | 36 | 2013 |
| 4H-SiC rectifiers with dual metal planar Schottky contacts KV Vassilevski, AB Horsfall, CM Johnson, NG Wright, AG O'Neill IEEE Transactions on Electron Devices 49 (5), 947-949, 2002 | 35 | 2002 |
| Experimental observation of microwave oscillations produced by pulsed silicon carbide IMPATT diode KV Vassilevski, AV Zorenko, K Zekentes Electronics Letters 37 (7), 1, 2001 | 35 | 2001 |
Nicholas WrightProfessor of Electronic Materials, Newcastle University在 ncl.ac.uk 的电子邮件经过验证
