| Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures D Pierucci, H Henck, J Avila, A Balan, CH Naylor, G Patriarche, YJ Dappe, ... Nano letters 16 (7), 4054-4061, 2016 | 344 | 2016 |
| High Electron Mobility in Epitaxial Graphene on 4H-SiC (0001) via post-growth annealing under hydrogen E Pallecchi, F Lafont, V Cavaliere, F Schopfer, D Mailly, W Poirier, ... Scientific reports 4 (1), 4558, 2014 | 223 | 2014 |
| van der Waals epitaxy of GaSe/graphene heterostructure: electronic and interfacial properties Z Ben Aziza, H Henck, D Pierucci, MG Silly, E Lhuillier, G Patriarche, ... ACS nano 10 (10), 9679-9686, 2016 | 174 | 2016 |
| Evidence for flat bands near the Fermi level in epitaxial rhombohedral multilayer graphene D Pierucci, H Sediri, M Hajlaoui, JC Girard, T Brumme, M Calandra, ... ACS nano 9 (5), 5432-5439, 2015 | 146 | 2015 |
| Epitaxial graphene on cubic SiC (111)/Si (111) substrate A Ouerghi, A Kahouli, D Lucot, M Portail, L Travers, J Gierak, J Penuelas, ... Applied physics letters 96 (19), 2010 | 134 | 2010 |
| Tunable quasiparticle band gap in few-layer GaSe/graphene van der Waals heterostructures Z Ben Aziza, D Pierucci, H Henck, MG Silly, C David, M Yoon, F Sirotti, ... Physical Review B 96 (3), 035407, 2017 | 131 | 2017 |
| Tunable quantum criticality and super-ballistic transport in a “charge” Kondo circuit Z Iftikhar, A Anthore, AK Mitchell, FD Parmentier, U Gennser, A Ouerghi, ... Science 360 (6395), 1315-1320, 2018 | 125 | 2018 |
| Epitaxial graphene on 4H-SiC (0001) grown under nitrogen flux: Evidence of low nitrogen doping and high charge transfer E Velez-Fort, C Mathieu, E Pallecchi, M Pigneur, MG Silly, R Belkhou, ... ACS nano 6 (12), 10893-10900, 2012 | 118 | 2012 |
| Surface morphology and characterization of thin graphene films on SiC vicinal substrate J Penuelas, A Ouerghi, D Lucot, C David, J Gierak, H Estrade-Szwarckopf, ... Physical Review B—Condensed Matter and Materials Physics 79 (3), 033408, 2009 | 113 | 2009 |
| Tunable doping in hydrogenated single layered molybdenum disulfide D Pierucci, H Henck, Z Ben Aziza, CH Naylor, A Balan, JE Rault, MG Silly, ... ACS nano 11 (2), 1755-1761, 2017 | 106 | 2017 |
| Phonon-photon mapping in a color center in hexagonal boron nitride TQP Vuong, G Cassabois, P Valvin, A Ouerghi, Y Chassagneux, C Voisin, ... Physical review letters 117 (9), 097402, 2016 | 105 | 2016 |
| Large-area and high-quality epitaxial graphene on off-axis SiC wafers A Ouerghi, MG Silly, M Marangolo, C Mathieu, M Eddrief, M Picher, ... Acs Nano 6 (7), 6075-6082, 2012 | 102 | 2012 |
| Large area molybdenum disulphide-epitaxial graphene vertical Van der Waals heterostructures D Pierucci, H Henck, CH Naylor, H Sediri, E Lhuillier, A Balan, JE Rault, ... Scientific reports 6 (1), 26656, 2016 | 97 | 2016 |
| Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition A Michon, S Vézian, A Ouerghi, M Zielinski, T Chassagne, M Portail Applied Physics Letters 97 (17), 2010 | 94 | 2010 |
| Intrinsic Properties of Suspended MoS2 on SiO2/Si Pillar Arrays for Nanomechanics and Optics J Chaste, A Missaoui, S Huang, H Henck, Z Ben Aziza, L Ferlazzo, ... ACS nano 12 (4), 3235-3242, 2018 | 89 | 2018 |
| Direct observation of the band structure in bulk hexagonal boron nitride H Henck, D Pierucci, G Fugallo, J Avila, G Cassabois, YJ Dappe, MG Silly, ... Physical Review B 95 (8), 085410, 2017 | 89 | 2017 |
| Structural coherency of epitaxial graphene on 3C–SiC (111) epilayers on Si (111) A Ouerghi, R Belkhou, M Marangolo, MG Silly, S El Moussaoui, M Eddrief, ... Applied physics letters 97 (16), 2010 | 82 | 2010 |
| Electronic band structure of Two-Dimensional /Graphene van der Waals Heterostructures H Henck, Z Ben Aziza, D Pierucci, F Laourine, F Reale, P Palczynski, ... Physical Review B 97 (15), 155421, 2018 | 80 | 2018 |
| Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure H Sediri, D Pierucci, M Hajlaoui, H Henck, G Patriarche, YJ Dappe, ... Scientific reports 5 (1), 16465, 2015 | 80 | 2015 |
| Epitaxial graphene on 3C-SiC (111) pseudosubstrate: Structural and electronic properties A Ouerghi, M Marangolo, R Belkhou, S El Moussaoui, MG Silly, M Eddrief, ... Physical Review B—Condensed Matter and Materials Physics 82 (12), 125445, 2010 | 78 | 2010 |
Fausto SirottiCNRS (PMC - Institut Polytechnique Paris)在 Polytechnique.edu 的电子邮件经过验证
