High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate MM Muhammed, N Alwadai, S Lopatin, A Kuramata, IS Roqan ACS applied materials & interfaces 9 (39), 34057-34063, 2017 | 92 | 2017 |
High optical and structural quality of GaN epilayers grown on (2 01) β-Ga2O3 MM Muhammed, M Peres, Y Yamashita, Y Morishima, S Sato, N Franco, ... Applied Physics Letters 105 (4), 2014 | 82 | 2014 |
Surface-passivated AlGaN nanowires for enhanced luminescence of ultraviolet light emitting diodes H Sun, MK Shakfa, MM Muhammed, B Janjua, KH Li, R Lin, TK Ng, ... Acs Photonics 5 (3), 964-970, 2017 | 79 | 2017 |
Photoinduced entropy of InGaN/GaN pin double-heterostructure nanowires N Alfaraj, S Mitra, F Wu, IA Ajia, B Janjua, A Prabaswara, RA Aljefri, H Sun, ... Applied Physics Letters 110 (16), 2017 | 67 | 2017 |
High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer MM Muhammed, MA Roldan, Y Yamashita, SL Sahonta, IA Ajia, K Iizuka, ... Scientific reports 6 (1), 29747, 2016 | 64 | 2016 |
GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices IA Ajia, Y Yamashita, K Lorenz, MM Muhammed, L Spasevski, D Almalawi, ... Applied Physics Letters 113 (8), 2018 | 53 | 2018 |
Fabrication and optical characterization of GaN waveguides on (−201)-oriented β-Ga2O3 KM Awan, MM Muhammad, M Sivan, S Bonca, IS Roqan, K Dolgaleva Optical Materials Express 8 (1), 88-96, 2017 | 18 | 2017 |
Thermodynamic photoinduced disorder in AlGaN nanowires N Alfaraj, MM Muhammed, KH Li, B Janjua, RA Aljefri, H Sun, TK Ng, ... AIP Advances 7 (12), 2017 | 17 | 2017 |
Surface termination dependent optical characteristics of MXene nanoflakes MM Muhammed, JH Mokkath Materials Today Chemistry 29, 101447, 2023 | 15 | 2023 |
Linear acene molecules in plasmonic cavities: mapping evolution of optical absorption spectra and electric field intensity enhancements MM Muhammed, JH Mokkath New Journal of Chemistry 43 (27), 10774-10783, 2019 | 14 | 2019 |
Optimized performance III-nitride-perovskite-based heterojunction photodetector via asymmetric electrode configuration S Mitra, MM Muhammed, N Alwadai, DR Almalawi, B Xin, Y Pak, ... RSC advances 10 (10), 6092-6097, 2020 | 10 | 2020 |
Observation of robust infrared plasmons in twisted titanium carbide (Ti3C2) MXene MM Muhammed, JH Mokkath Journal of Physics and Chemistry of Solids 164, 110612, 2022 | 9 | 2022 |
Carrier dynamics of InxGa1-xN/GaN multiple quantum wells grown on (−201) β-Ga2O3 for bright vertical light emitting diodes MM Muhammed, J Xu, N Wehbe, IS Roqan Optics Express 26 (12), 14869-14878, 2018 | 8 | 2018 |
Growth modification via indium surfactant for InGaN/GaN green LED MIM Taib, MA Ahmad, EA Alias, AI Alhassan, IA Ajia, MM Muhammed, ... Semiconductor Science and Technology 38 (3), 035025, 2023 | 6 | 2023 |
Impact of packing arrangement on the optical properties of C60 cluster aggregates MM Muhammed, JH Mokkath, AJ Chamkha Physical Chemistry Chemical Physics 24 (10), 5946-5955, 2022 | 4 | 2022 |
(¯ 201)[beta]-Gallium oxide substrate for high quality GaN materials IS Roqan, MM Muhammed Oxide-based Materials and Devices VI 9364, 173-180, 2015 | 4 | 2015 |
Electric field hotspots of all-inorganic off-stoichiometric APbX3 (A= Cs, Rb and X= Cl, Br, I) perovskite quantum dots MM Muhammed, JH Mokkath Physica E: Low-dimensional Systems and Nanostructures 113, 65-71, 2019 | 3 | 2019 |
Decay rates of plasmonic elliptical nanostructures via effective medium theory M Gamal, I Kandas, H Badran, A Hajjiah, M Muhammed, N Shehata Nanomaterials 11 (8), 1928, 2021 | 2 | 2021 |
Electric field amplification of plasmon‐molecule hybrids revealed by first‐principles time dependent density functional theory calculations MM Muhammed, J John, JH Mokkath International Journal of Quantum Chemistry 119 (23), e26021, 2019 | 2 | 2019 |
Probing Subnanometric-Scale Hotspots in Metallic Interfaces MM Muhammed, JH Mokkath Plasmonics 14 (6), 2031-2043, 2019 | 2 | 2019 |